公开(公告)号：US20200058797A1

公开(公告)日：2020-02-20

申请号：US16663275

申请日：2019-10-24

Applicant: LG Display Co., Ltd.

Inventor： SoYoung NOH ,  YoungJang LEE ,  HyoJin KIM ,  Hyuk JI

IPC: H01L29/786 ,  H01L27/12 ,  H01L29/417

Abstract: Provided are a display device and a method for manufacturing the same. The display device includes: a connection source electrode and a connection drain electrode connected to a first source electrode a the first drain electrode, respectively by penetrating an isolation insulating layer and a second interlayer dielectric layer to enhance a characteristic of an element and reliability of the display device.

公开(公告)号：US20240298490A1

公开(公告)日：2024-09-05

申请号：US18664067

申请日：2024-05-14

Applicant: LG Display Co., Ltd.

Inventor： Kyeong-Ju MOON ,  So-Young NOH ,  Ki-Tae KIM ,  Hyuk JI

IPC: H10K59/131 ,  H10K50/844

CPC classification number: H10K59/131 ,  H10K50/844

Abstract: Discussed is display apparatus including a substrate including a display area and a non-display area adjacent to the display area, a first thin film transistor disposed on the display area, a first semiconductor pattern of the first thin film transistor including an oxide semiconductor, a second thin film transistor disposed on the display area, a second semiconductor pattern of the second thin film transistor including a material different from the first semiconductor pattern, and a first conductive line disposed on the non-display area, a first portion of the first conductive line having a round shape.

公开(公告)号：US20230189591A1

公开(公告)日：2023-06-15

申请号：US18105682

申请日：2023-02-03

Applicant: LG Display Co., Ltd.

Inventor： Kyeong-Ju MOON ,  So-Young NOH ,  Ki-Tae KIM ,  Hyuk JI

IPC: H10K59/131 ,  H10K50/844

CPC classification number: H10K59/131 ,  H10K50/844

Abstract: A display apparatus can include a substrate including a display area and a non-display area adjacent to the display area, a first thin film transistor in the display area, and a second thin film transistor in the display area. The first thin film transistor can include a first semiconductor pattern on the substrate, a first gate electrode overlapping the first semiconductor pattern, and a first source electrode and a first drain electrode both connected to the first semiconductor pattern. The second thin film transistor can include a second semiconductor pattern, a second gate electrode overlapping the second semiconductor pattern, a second source electrode connected to the second semiconductor pattern, and a second drain electrode connected to the second semiconductor pattern. The display apparatus can further include a conductive pattern between the display area and the second semiconductor pattern.

公开(公告)号：US20220367526A1

公开(公告)日：2022-11-17

申请号：US17876371

申请日：2022-07-28

Applicant: LG Display Co., Ltd.

Inventor： Ki-Tae KIM ,  So-Young NOH ,  Ui-Jin CHUNG ,  Kyeong-Ju MOON ,  Hyuk JI

IPC: H01L27/12 ,  H01L27/15 ,  H01L33/62 ,  H01L29/786 ,  H01L33/54

Abstract: A display apparatus can include a driving circuit on a device substrate, the driving circuit including a first thin film transistor and a second thin film transistor, a first insulating layer on the first thin film transistor and the second thin film transistor of the driving circuit, a second insulating layer on the first insulating layer, and a light-emitting device on the second insulating layer, the light-emitting device being electrically connected to the second thin film transistor of the driving circuit. Each of the first thin film transistor and the second thin film transistor includes an oxide semiconductor pattern and a gate electrode overlapping a portion of the oxide semiconductor pattern. The gate electrode has a stacked structure of a first hydrogen barrier layer and a low-resistance electrode.

公开(公告)号：US20210313470A1

公开(公告)日：2021-10-07

申请号：US17220676

申请日：2021-04-01

Applicant: LG Display Co., Ltd.

Inventor： Hyuk JI ,  Jin Chae JEON ,  Jae Hyun KIM ,  Sun Young CHOI ,  Mi Jin JEONG

IPC: H01L29/786 ,  H01L29/66

Abstract: An oxide semiconductor thin film transistor and a method of forming the oxide semiconductor thin film transistor are provided. The oxide semiconductor thin film transistor can include a semiconductor layer including a channel region, a source region and a drain region; a first gate insulating layer on the semiconductor layer; a gate electrode on the first gate insulating layer; a second gate insulating layer on the gate electrode; an auxiliary electrode on the second gate insulating layer; an interlayer insulating layer on the auxiliary electrode; and a source electrode and a drain electrode on the interlayer insulating layer, wherein the source region and the drain region being disposed at both sides of the channel region, wherein the gate electrode overlapping with the channel region, and the auxiliary electrode overlapping with the gate electrode.

公开(公告)号：US20190198534A1

公开(公告)日：2019-06-27

申请号：US15993198

申请日：2018-05-30

Applicant: LG DISPLAY CO., LTD.

Inventor： SoYeon JE ,  Hyuk JI

IPC: H01L27/12 ,  H01L29/786 ,  H01L21/02 ,  H01L29/66

CPC classification number: H01L27/1251 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02274 ,  H01L21/02532 ,  H01L21/02565 ,  H01L21/02592 ,  H01L21/02667 ,  H01L21/443 ,  H01L21/47573 ,  H01L21/47635 ,  H01L27/1222 ,  H01L27/1225 ,  H01L27/124 ,  H01L27/1248 ,  H01L27/1266 ,  H01L27/1274 ,  H01L27/1288 ,  H01L27/3246 ,  H01L27/3248 ,  H01L27/3258 ,  H01L27/3262 ,  H01L27/3276 ,  H01L29/66757 ,  H01L29/66969 ,  H01L29/78618 ,  H01L29/78675 ,  H01L29/7869 ,  H01L29/78696 ,  H01L51/5253 ,  H01L51/56 ,  H01L2227/323

Abstract: A display device can include a first thin film transistor including a first active layer including a first semiconductor material, a first gate electrode overlapping with the first active layer, and a first source electrode and a first drain electrode both electrically connected to the first active layer; a separation insulating layer disposed on the first thin film transistor; and a second thin film transistor disposed on the separation insulating layer and including: a second active layer including a second semiconductor material different from the first semiconductor material, a second gate electrode overlapping with the second active layer, and a second source electrode and a second drain electrode both electrically connected to the second active layer, in which the second active layer of the second thin film transistor has a first thickness and a second thickness greater than the first thickness.