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公开(公告)号:US20240355788A1
公开(公告)日:2024-10-24
申请号:US18685475
申请日:2021-08-26
Applicant: LG ELECTRONICS INC.
Inventor: Sungmin PARK , Byoungkwon CHO , Wonseok CHOI
IPC: H01L25/075 , H01L33/22 , H01L33/44 , H01L33/62
CPC classification number: H01L25/0753 , H01L33/22 , H01L33/44 , H01L33/62
Abstract: A semiconductor light emitting device includes a light emitting part, a first electrode including a bonding layer below the light emitting part, a barrier around the bonding layer, a second electrode on the light emitting part, and a passivation layer to surround the light emitting part and the second electrode.
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公开(公告)号:US20230352643A1
公开(公告)日:2023-11-02
申请号:US17793295
申请日:2020-01-21
Applicant: LG ELECTRONICS INC.
Inventor: Byoungkwon CHO , Junghoon KIM , Byungjun KANG , Chilkeun PARK
IPC: H01L33/62 , H01L25/075 , H01L33/38
CPC classification number: H01L33/62 , H01L25/0753 , H01L33/38
Abstract: Discussed is a display device including a base portion, assembled electrodes extending along one direction on the base portion, a dielectric layer to cover the assembled electrodes, a partition wall portion on the dielectric layer while forming a plurality of cells, and a plurality of semiconductor light emitting diodes seated in the plurality of cells, respectively and to emit light of different colors. The plurality of semiconductor light emitting diodes emitting different colors include recessed portions having different shapes. Further, a surface of the plurality of cells includes a solder portion protruding to correspond to the recessed portions of the plurality of semiconductor light emitting diodes seated in the plurality of cells, respectively.
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公开(公告)号:US20220302351A1
公开(公告)日:2022-09-22
申请号:US17641291
申请日:2019-09-17
Applicant: LG ELECTRONICS INC.
Inventor: Byoungkwon CHO , Junghoon KIM
Abstract: Discussed is a display device including: a base part; a plurality of assembly electrodes extending in a first direction and disposed at predetermined intervals on the base part; a dielectric layer stacked on the base part to cover the plurality of assembly electrodes; a barrier wall portion stacked on the dielectric layer to define a cell overlapping at least a portion of the plurality of assembly electrodes along the first direction of the plurality of assembly electrode; and a plurality of semiconductor light emitting devices disposed in the cell, wherein the plurality of semiconductor light emitting devices comprise a magnetic layer extending in a longitudinal direction that intersects the first direction.
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14.
公开(公告)号:US20200168589A1
公开(公告)日:2020-05-28
申请号:US16774787
申请日:2020-01-28
Applicant: LG ELECTRONICS INC.
Inventor: Junghoon KIM , Byoungkwon CHO
Abstract: Discussed is a display device, including a semiconductor light emitting device disposed on a substrate, and having a first conductive electrode disposed on an upper edge of the semiconductor light emitting device, and a second conductive electrode disposed on an upper central portion of the semiconductor light emitting device and surrounded by the first conductive electrode, a passivation layer disposed to cover a part of an upper surface of the semiconductor light emitting device, a first wiring electrode electrically connected to the first conductive electrode and a second wiring electrode electrically connected to the second conductive electrode, wherein a part of the second wiring electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween, and wherein the first conductive electrode is disposed at a position higher than that of the second conductive electrode in a thickness direction of the semiconductor light emitting device.
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公开(公告)号:US20150378216A1
公开(公告)日:2015-12-31
申请号:US14635858
申请日:2015-03-02
Applicant: LG ELECTRONICS INC.
Inventor: Jinmok OH , Byoungkwon CHO , Hyunkwon SHIN , Jinwoo SUNG
IPC: G02F1/1335
CPC classification number: G02F1/133609 , G02F1/1336 , G02F1/133603 , G02F1/133606 , G02F2001/133614 , G02F2202/36
Abstract: A backlight unit including a plurality of light sources configured to emit primary light, and a quantum dot composite. The quantum dot composite includes quantum dot phosphors excited by primary light supplied from the plurality of light sources so as to emit secondary light having a different wavelength than the primary light, and scattering particles that are configured to scatter the primary light. The scattering particles include first scattering particles, and second scattering particles different from the first scattering particles in size and composed of particles each having a diameter in the range of 5 to 50 nm.
Abstract translation: 包括被配置为发射初级光的多个光源的背光单元和量子点复合物。 量子点复合物包括从由多个光源提供的初级光激发的量子点荧光体,以发射具有与初级光不同的波长的二次光,以及被配置为散射初级光的散射粒子。 散射粒子包括第一散射粒子和与第一散射粒子不同的第二散射粒子,粒径分别为5〜50nm。
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公开(公告)号:US20250015057A1
公开(公告)日:2025-01-09
申请号:US18588902
申请日:2024-02-27
Applicant: LG ELECTRONICS INC.
Inventor: Byoungkwon CHO , Hyeyoung YANG , Wonseok CHOI
IPC: H01L25/075 , H01L33/46 , H01L33/62
Abstract: A semiconductor light emitting device includes a light emitting layer, a first electrode on a lower side of the light emitting layer, a second electrode on an upper side of the light emitting layer, an insulating layer on a side portion of the light emitting layer and overlapping at least a portion of the first electrode and overlapping at least a portion of the second electrode and a plurality of metal layers spaced apart from each other in the insulating layer, the plurality of metal layers including a first metal layer including a reflective layer and a second metal layer including a magnetic layer.
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公开(公告)号:US20240372041A1
公开(公告)日:2024-11-07
申请号:US18685024
申请日:2021-08-20
Applicant: LG ELECTRONICS INC.
Inventor: Byoungkwon CHO , Jaehyuk LEE , Wonseok CHOI , Chilkeun PARK
IPC: H01L33/42 , H01L25/075 , H01L33/54 , H01L33/62
Abstract: A lens driving device according to an embodiment includes a substrate, a first frame including a lens and disposed on the substrate, a second frame on which the first frame is placed and a third frame on which the second frame is disposed. The first frame may move in a Z-axis direction, the second frame may tilt in X-axis and Y-axis directions and rotate around the Z axis, and the third frame may include a stopper structure to limit tilting and rotation of the second frame.
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公开(公告)号:US20240332453A1
公开(公告)日:2024-10-03
申请号:US18692202
申请日:2021-09-14
Applicant: LG ELECTRONICS INC.
Inventor: Jaehyuk LEE , Chilkeun PARK , Byoungkwon CHO , Sungmin PARK
IPC: H01L33/20 , H01L25/075 , H01L33/44
CPC classification number: H01L33/20 , H01L25/0753 , H01L33/44
Abstract: The semiconductor light emitting device may include a light emitting unit, a first electrode on the bottom and side of the light emitting unit, and a second electrode on the top of the light emitting unit, a plurality of trenches on the sides of the light emitting unit, and a passivation layer on a side of the light emitting unit, and an end of the passivation layer may be located in one of the plurality of trenches.
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19.
公开(公告)号:US20240038825A1
公开(公告)日:2024-02-01
申请号:US18227788
申请日:2023-07-28
Applicant: LG ELECTRONICS INC.
Inventor: Byoungkwon CHO , Wonseok CHOI , Jeonghyo KWON , Sungmin PARK
CPC classification number: H01L27/156 , G09G3/32 , H01L33/24 , H01L33/44 , H01L33/405 , G09G2300/0842
Abstract: The embodiment relates to a semiconductor light emitting device for a display pixel and a display device including the same. A semiconductor light emitting device for a display pixel according to an embodiment can include a light emitting structure including a first conductivity type semiconductor layer, a second conductivity type semiconductor layer and an active layer disposed therebetween, a passivation layer disposed on the light emitting structure, and a second electrode layer disposed under the light emitting structure. The light emitting structure may include a rounding semiconductor layer in which an upper surface thereof is partially rounded.
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20.
公开(公告)号:US20190326477A1
公开(公告)日:2019-10-24
申请号:US16415583
申请日:2019-05-17
Applicant: LG ELECTRONICS INC.
Inventor: Junghoon KIM , Changseo PARK , Bongchu SHIM , Byoungkwon CHO , Hyunwoo CHO
Abstract: The present disclosure relates a display device including a semiconductor light emitting device, and a substrate having a receiving groove in which the semiconductor light emitting device is accommodated, wherein the semiconductor light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed at an upper portion of the first conductive semiconductor layer, a first conductive electrode disposed on the first conductive semiconductor layer, and a second conductive electrode disposed on the second conductive semiconductor layer, and spaced apart from the first conductive electrode along a horizontal direction, wherein when the semiconductor light emitting device is assembled into the receiving groove, the first conductive semiconductor layer has an asymmetrical shape with respect to at least one direction so that the first conductive electrode and the second conductive electrode are arranged at preset positions.
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