公开(公告)号：US20240250065A1

公开(公告)日：2024-07-25

申请号：US18290995

申请日：2021-07-21

Applicant: LG ELECTRONICS INC.

Inventor： Chilkeun PARK ,  Byoungkwon CHO ,  Wonseok CHOI ,  Wonjae CHANG

IPC: H01L25/065 ,  H01L27/12 ,  H01L33/62

CPC classification number: H01L25/0652 ,  H01L27/124 ,  H01L33/62

Abstract: The display device can include a substrate, a barrier rib having an assembly hole on the substrate, a semiconductor light emitting device in the assembly hole, and a first connection part disposed in the assembly hole and on the barrier rib and electrically connected to a side surface of the semiconductor light emitting device. In the embodiment, maximum luminance can always be obtained regardless of whether the assembling wirings disposed on the substrate are disposed on the same layer or different layers, and each pixel has constant luminance, thereby improving image quality due to luminance uniformity.

公开(公告)号：US20240266329A1

公开(公告)日：2024-08-08

申请号：US18580914

申请日：2021-07-22

Applicant: LG ELECTRONICS INC.

Inventor： Junoh SHIN ,  Byoungkwon CHO ,  Wonseok CHOI ,  Jeonghyo KWON

IPC: H01L25/075 ,  H01L33/00 ,  H01L33/38 ,  H01L33/44

CPC classification number: H01L25/0753 ,  H01L33/0093 ,  H01L33/38 ,  H01L33/44 ,  H01L2224/95133 ,  H01L2933/0016

Abstract: The present disclosure is applicable to a technical field related to display devices, and relates to a display device using, for example, a micro light emitting diode (LED), and a manufacturing method therefor. The present disclosure may comprise: a substrate; a partition defining a unit pixel region; a first electrode located in the unit pixel region; a semiconductor light-emitting element electrically connecting a first-type electrode to the first electrode and provided in the unit pixel region; an inclined a layer formed on the semiconductor light-emitting element and the partition, and having a high incline on the semiconductor light-emitting element; and a second electrode electrically connected, on the inclined coating layer, to a second-type electrode of the semiconductor light-emitting element.

公开(公告)号：US20230005886A1

公开(公告)日：2023-01-05

申请号：US17779907

申请日：2020-02-10

Applicant: LG ELECTRONICS INC.

Inventor： Byungjun KANG ,  Junghoon KIM ,  Byoungkwon CHO ,  Mihee HEO

IPC: H01L25/075 ,  H01L33/38 ,  H01L33/62 ,  H01L33/20

Abstract: Discussed is a display device including a base part; a plurality of assembly electrodes disposed on the base part and having a first electrode and a second electrode that generate an electric field when power is applied; a dielectric layer disposed to cover the plurality of assembly electrodes; and a plurality of semiconductor light emitting devices disposed on a surface of the dielectric layer, wherein one surface of the plurality of semiconductor light emitting devices facing the dielectric layer and one surface of the dielectric layer facing the plurality of semiconductor light emitting devices respectively comprise a concave-convex structure.

公开(公告)号：US20180105658A1

公开(公告)日：2018-04-19

申请号：US15567304

申请日：2016-01-22

Applicant: LG ELECTRONICS INC.

Inventor： Byoungkwon CHO ,  Jinmok OH ,  Dongseon JANG ,  Juchul LEE

IPC: C08J5/18 ,  C08K3/22 ,  C08L33/06 ,  G02F1/1335

CPC classification number: C08J5/18 ,  C08K3/22 ,  C08K3/30 ,  C08K9/08 ,  C08K2201/003 ,  C08K2201/014 ,  C08L33/06 ,  G02F1/133603 ,  G02F1/133606 ,  G02F1/133615 ,  G02F2001/133614 ,  G02F2202/022 ,  G02F2202/36 ,  G02F2203/055 ,  C08L33/12

Abstract: The embodiment relates to a quantum dot-polymer composite and a method for producing the same, wherein the quantum dot-polymer composite includes: a first phase made of a matrix resin; a second phase dispersed and distributed in the first phase, comprising a quantum dot, and having a spherical shape; and a micro scattering agent distributed in an interface between the first phase and the second phase along a surface of the second phase.

公开(公告)号：US20160161088A1

公开(公告)日：2016-06-09

申请号：US14675181

申请日：2015-03-31

Applicant: LG ELECTRONICS INC.

Inventor： Jinwoo SUNG ,  Jinmok OH ,  Byoungkwon CHO ,  Moongoo CHOI

IPC: F21V9/16

CPC classification number: F21V9/30 ,  F21Y2113/13 ,  F21Y2115/10 ,  G02B1/04 ,  G02B6/0003 ,  G02F1/133603 ,  G02F2001/133614 ,  H01L33/50 ,  H01L33/502 ,  H01L33/505 ,  H01L2224/48091 ,  H01L2924/181 ,  C08L2666/70 ,  H01L2924/00014 ,  H01L2924/00012

Abstract: A light conversion film including a first barrier film, a light conversion layer disposed on the first barrier film, the light conversion layer including a matrix resin and red quantum dots that are dispersed into the matrix resin, and a second barrier film disposed on the light conversion layer. The light conversion film satisfies following Equation (1): 5≦(weight of quantum dot within light conversion layer/total weight of light conversion layer)×100×t≦50, where, t is a thickness of the light conversion layer.

Abstract translation: 一种光转换膜，包括第一阻挡膜，设置在第一阻挡膜上的光转换层，包含基质树脂的光转换层和分散在基质树脂中的红色量子点，以及设置在该光上的第二阻挡膜 转换层。 光转换膜满足以下等式（1）：5＆nlE（光转换层内的量子点的重量/光转换层的总重量）×100×t＆nlE; 50其中，t是光转换层的厚度。

公开(公告)号：US20220302347A1

公开(公告)日：2022-09-22

申请号：US17834452

申请日：2022-06-07

Applicant: LG ELECTRONICS INC.

Inventor： Junghoon KIM ,  Byoungkwon CHO

IPC: H01L33/38 ,  H01L25/075 ,  H01L33/24 ,  H01L33/44 ,  H01L33/62 ,  H01L23/00

Abstract: A display device includes a semiconductor light emitting device disposed on a substrate and having a first conductive electrode disposed on a first upper portion of the semiconductor light emitting device and a second conductive electrode disposed on a second upper portion of the semiconductor light emitting device, a passivation layer disposed on the semiconductor light emitting device, a first electrode electrically connected to the first conductive electrode, and a second electrode electrically connected to the second conductive electrode. A part of the second electrode overlaps with a part of the first conductive electrode with the passivation layer interposed therebetween.

公开(公告)号：US20220102579A1

公开(公告)日：2022-03-31

申请号：US17550743

申请日：2021-12-14

Applicant: LG ELECTRONICS INC.

Inventor： Byoungkwon CHO ,  Junghoon KIM

IPC: H01L33/00 ,  H01L25/075 ,  H01L33/60

Abstract: A semiconductor light emitting element can include an n-type semiconductor layer, a p-type semiconductor layer in a first region on the n-type semiconductor layer, a p-type electrode on the p-type semiconductor layer, an n-type electrode in a second region different from the first region on the n-type semiconductor layer, a magnetic layer under the n-type semiconductor layer, a reflective layer between the n-type semiconductor layer and the magnetic layer, and a passivation layer surrounding the n-type semiconductor layer, the p-type semiconductor layer, the p-type electrode, the n-type electrode, and the magnetic layer.

公开(公告)号：US20200303592A1

公开(公告)日：2020-09-24

申请号：US16894262

申请日：2020-06-05

Applicant: LG ELECTRONICS INC.

Inventor： Junghoon KIM ,  Changseo PARK ,  Bongchu SHIM ,  Byoungkwon CHO ,  Hyunwoo CHO

IPC: H01L33/38 ,  H01L33/20 ,  H01L33/40 ,  H01L33/44 ,  H01L25/075 ,  H01L33/00 ,  H01L33/62

Abstract: Discussed is a display device, including a semiconductor light emitting device and a substrate having a receiving groove in which the semiconductor light emitting device is accommodated, wherein the semiconductor light emitting device includes a first conductive semiconductor layer, a second conductive semiconductor layer disposed on an upper portion of the first conductive semiconductor layer, a first conductive electrode disposed on the first conductive semiconductor layer and a second conductive electrode disposed on the second conductive semiconductor layer, and spaced apart from the first conductive electrode along a horizontal direction of the semiconductor light emitting device, wherein the first conductive semiconductor layer has a symmetrical shape with respect to at least one direction of the semiconductor light emitting device so that the first conductive electrode and the second conductive electrode are arranged at preset positions when the semiconductor light emitting device is accommodated into the receiving groove.

公开(公告)号：US20200251608A1

公开(公告)日：2020-08-06

申请号：US16691113

申请日：2019-11-21

Applicant: LG ELECTRONICS INC.

Inventor： Byoungkwon CHO ,  Junghoon KIM

IPC: H01L33/00 ,  H01L33/60 ,  H01L25/075

Abstract: A semiconductor light emitting element according to an embodiment of the present disclosure includes: a n-type semiconductor layer; a p-type semiconductor layer formed in a first region on the n-type semiconductor layer; a p-type electrode formed on the p-type semiconductor layer; a n-type electrode formed in a second region different from the first region on the n-type semiconductor layer; and a magnetic layer formed under the n-type semiconductor layer.

公开(公告)号：US20240387490A1

公开(公告)日：2024-11-21

申请号：US18443406

申请日：2024-02-16

Applicant: LG ELECTRONICS INC.

Inventor： Byoungkwon CHO ,  Hongcheol LEE ,  Wonseok CHOI

IPC: H01L25/16 ,  H01L33/54 ,  H01L33/56

Abstract: The present disclosure is applicable to a display device-related technology field, for example, relates to a display device using a micro light emitting diode (LED) and a method for manufacturing the same. The display device using the semiconductor light emitting device includes a wiring substrate with a first electrode disposed thereon, a light emitting device disposed on the wiring substrate to constitute a unit sub-pixel, a seating layer located between the wiring substrate and the light emitting device, wherein the seating layer includes a first portion in contact with the light emitting device and a second portion located under the first portion and having an area size greater than an area size of the first portion, a first connection electrode electrically connecting the first electrode to one side of the light emitting device corresponding to a shape of the seating layer, a planarization layer covering the light emitting device and the first connection electrode, and a second connection electrode located on the planarization layer and electrically connected to the other side of the light emitting device.