DISPLAY DEVICE
    15.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20240332473A1

    公开(公告)日:2024-10-03

    申请号:US18578185

    申请日:2021-07-28

    CPC classification number: H01L33/62 H01L25/167

    Abstract: The display device can include a barrier rib disposed on a substrate and having an assembly hole, a conductor in the assembly hole, and a semiconductor light emitting device disposed on the conductor within the assembly hole. The conductor can include a first conductor between the substrate and the semiconductor light emitting device, and a second conductor between the inside of the assembly hole and the outside of the semiconductor light emitting device.

    DISPLAY DEVICE
    17.
    发明申请

    公开(公告)号:US20230042942A1

    公开(公告)日:2023-02-09

    申请号:US17518391

    申请日:2021-11-03

    Abstract: Discussed is a display device including a substrate, a plurality of first assembling wires on the substrate, a plurality of second assembling wires on the substrate, and separated from the plurality of first assembling wires; a first insulating layer disposed on the substrate, wherein a first hole is located on each of the plurality of second assembling wires, respectively, and wherein the first hole is not located on each of the plurality of first assembling wires; and a semiconductor light emitting device in the first hole.

    DISPLAY APPARATUS USING SEMICONDUCTOR LIGHT-EMITTING DEVICE

    公开(公告)号:US20210159269A1

    公开(公告)日:2021-05-27

    申请号:US17257190

    申请日:2018-07-11

    Abstract: Discussed is a plurality of semiconductor light-emitting devices, wherein at least one of the semiconductor light-emitting devices includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping the first conductive semiconductor layer and having the second conductive electrode arranged thereon; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; an intermediate layer arranged on the second conductive semiconductor layer; a protrusion, made of an electro-polishable porous material, on the intermediate layer; and an undoped semiconductor layer arranged between the intermediate layer and the protrusion. The intermediate layer includes a first layer including second conductive impurities and a second layer having a higher concentration of the second conductive impurities than the first layer, wherein the first layer and the second layer are sequentially and repetitively stacked.

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