DISPLAY DEVICE
    11.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20230420618A1

    公开(公告)日:2023-12-28

    申请号:US18265172

    申请日:2020-12-04

    CPC classification number: H01L33/483 H01L25/167 H01L27/124

    Abstract: The display device includes a substrate, a first wiring line on the substrate, a second wiring line on the substrate, and a first insulating member on the first wiring line and the second wiring line, a blocking member disposed across the first wiring line and the second wiring line, a second insulating member including a plurality of assembly holes, and a plurality of light emitting devices disposed in each of the plurality of assembly holes.
    Each of the plurality of assembly holes includes a first region closer to the blocking member and a second region farther than the first region from the blocking member. A part of the blocking member is disposed in the first area of the assembly hole.

    DISPLAY DEVICE
    16.
    发明公开
    DISPLAY DEVICE 审中-公开

    公开(公告)号:US20240332473A1

    公开(公告)日:2024-10-03

    申请号:US18578185

    申请日:2021-07-28

    CPC classification number: H01L33/62 H01L25/167

    Abstract: The display device can include a barrier rib disposed on a substrate and having an assembly hole, a conductor in the assembly hole, and a semiconductor light emitting device disposed on the conductor within the assembly hole. The conductor can include a first conductor between the substrate and the semiconductor light emitting device, and a second conductor between the inside of the assembly hole and the outside of the semiconductor light emitting device.

    DISPLAY APPARATUS USING SEMICONDUCTOR LIGHT-EMITTING DEVICE

    公开(公告)号:US20210159269A1

    公开(公告)日:2021-05-27

    申请号:US17257190

    申请日:2018-07-11

    Abstract: Discussed is a plurality of semiconductor light-emitting devices, wherein at least one of the semiconductor light-emitting devices includes: a first conductive electrode and a second conductive electrode; a first conductive semiconductor layer having the first conductive electrode arranged thereon; a second conductive semiconductor layer overlapping the first conductive semiconductor layer and having the second conductive electrode arranged thereon; an active layer arranged between the first conductive semiconductor layer and the second conductive semiconductor layer; an intermediate layer arranged on the second conductive semiconductor layer; a protrusion, made of an electro-polishable porous material, on the intermediate layer; and an undoped semiconductor layer arranged between the intermediate layer and the protrusion. The intermediate layer includes a first layer including second conductive impurities and a second layer having a higher concentration of the second conductive impurities than the first layer, wherein the first layer and the second layer are sequentially and repetitively stacked.

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