公开(公告)号：US11605757B2

公开(公告)日：2023-03-14

申请号：US15751970

申请日：2016-08-22

Applicant: LG ELECTRONICS INC.

Inventor： Changseo Park ,  Kiseong Jeon ,  Jinhong Park ,  Hwankuk Yuh

IPC: H01L33/08 ,  H01L25/075 ,  H01L33/38 ,  H05B33/10 ,  H05B33/14 ,  H05B33/22 ,  H05K1/11 ,  H01L33/44 ,  H01L33/50 ,  H01L33/62

Abstract: The present invention relates to a display device and, in particular, to a display device using a semiconductor light emitting diode. A display device according to the present invention comprises a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting diodes electrically connected to the metal pads through self-assembly. The present invention is characterized in that: the semiconductor light emitting diodes respectively include a conductive semiconductor layer, a conductive electrode formed on one surface of the conductive semiconductor layer, and a passivation layer enclosing the semiconductor light emitting diode and provided with a through hole for exposing the conductive electrode; one end portion of the semiconductor light emitting diodes is divided into a first portion in which the conductive electrode is exposed, and a second portion in which the passivation layer is exposed; and the maximum width of the metal pad is set to a range of the width to twice the width of the second portion.

公开(公告)号：US10368417B2

公开(公告)日：2019-07-30

申请号：US15740179

申请日：2016-07-05

Applicant: LG ELECTRONICS INC.

Inventor： Seonock Kim ,  Hwankuk Yuh

IPC: H01L33/10 ,  H05B33/10 ,  F21K99/00 ,  H05B33/14 ,  H05B37/02 ,  F21K9/90 ,  H01L33/24 ,  H01L33/38 ,  H05B33/26 ,  H01L25/075

Abstract: The present invention relates to a display device and, particularly, to a display device using a semiconductor light-emitting device. The display device according to the present invention comprises a semiconductor light-emitting device, and the semiconductor light-emitting device comprises: a first conductive semiconductor layer; a second conductive semiconductor layer having a lateral surface, and overlapped with the first conductive semiconductor layer; a first conductive electrode electrically connected to the first conductive semiconductor layer; and a second conductive electrode electrically connected to the second conductive semiconductor layer, wherein the second conductive semiconductor layer has an inclined part inclined with respect to the lateral surface, and the second conductive electrode is formed so as to cover the inclined part.

公开(公告)号：US09620681B2

公开(公告)日：2017-04-11

申请号：US14830508

申请日：2015-08-19

Applicant: LG Electronics Inc.

Inventor： Hwankuk Yuh

IPC: H01L33/00 ,  H01L33/38 ,  H01L33/20 ,  H01L29/40 ,  H01L33/42

CPC classification number: H01L33/385 ,  H01L24/03 ,  H01L25/0753 ,  H01L29/40 ,  H01L33/0079 ,  H01L33/0095 ,  H01L33/20 ,  H01L33/382 ,  H01L33/42 ,  H01L33/44 ,  H01L33/62 ,  H01L2224/03001 ,  H01L2933/0016

Abstract: A semiconductor device including a first conductivity type semiconductor layer, an active layer, and a second conductivity type semiconductor layer which are sequentially stacked; a first conductivity type upper electrode portion and a first conductivity type lower electrode portion disposed to correspond to each other with the first conductivity type semiconductor layer interposed therebetween; a second conductivity type upper electrode portion and a second conductivity type lower electrode portion disposed to correspond to each other with the first and second conductivity type semiconductor layers interposed therebetween; and a second conductivity type electrode connection portion electrically connecting the second conductivity type upper electrode portion and the second conductivity type lower electrode portion.