Apparatus and method for self-assembling semiconductor light-emitting device

    公开(公告)号:US11869871B2

    公开(公告)日:2024-01-09

    申请号:US17286844

    申请日:2019-10-08

    CPC classification number: H01L24/95 H01L21/67121 H01L25/0753 H01L2224/95101

    Abstract: Discussed is an apparatus for self-assembling semiconductor light-emitting devices, the apparatus including a fluid chamber to accommodate the semiconductor light-emitting devices, each semiconductor light-emitting device having a magnetic body; a magnet to apply a magnetic force to the semiconductor light-emitting devices while an assembly substrate is disposed at an assembly position of the self-assembly apparatus; a power supply to induce formation of an electric field on the assembly substrate to allow the semiconductor light-emitting devices to be seated at a preset positions on the assembly substrate in a process of moving the semiconductor light-emitting devices due to a change in a position of the magnet; and a fluid injector to shoot a fluid to some of the semiconductor light-emitting devices to allow the some of the semiconductor light-emitting devices seated on the assembly substrate to be separated from the assembly substrate.

    Display device using semiconductor light emitting device and method for manufacturing the same

    公开(公告)号:US10607515B2

    公开(公告)日:2020-03-31

    申请号:US16415770

    申请日:2019-05-17

    Abstract: The present disclosure relates to a display device using semiconductor light emitting devices and a fabrication method thereof, and the display device according to the present disclosure can include a plurality of semiconductor light emitting devices, a first wiring electrode and a second wiring electrode respectively extended from the semiconductor light emitting devices to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes disposed on the substrate, and provided with a first electrode and a second electrode configured to generate an electric field when an electric current is supplied, and a dielectric layer formed to cover the pair electrodes, wherein the first wiring electrode and the second wiring electrode are formed on an opposite side to the plurality of the pair electrodes with respect to the semiconductor light emitting devices.

    Display device using semiconductor light emitting diode

    公开(公告)号:US11605757B2

    公开(公告)日:2023-03-14

    申请号:US15751970

    申请日:2016-08-22

    Abstract: The present invention relates to a display device and, in particular, to a display device using a semiconductor light emitting diode. A display device according to the present invention comprises a substrate having a plurality of metal pads; and a plurality of semiconductor light emitting diodes electrically connected to the metal pads through self-assembly. The present invention is characterized in that: the semiconductor light emitting diodes respectively include a conductive semiconductor layer, a conductive electrode formed on one surface of the conductive semiconductor layer, and a passivation layer enclosing the semiconductor light emitting diode and provided with a through hole for exposing the conductive electrode; one end portion of the semiconductor light emitting diodes is divided into a first portion in which the conductive electrode is exposed, and a second portion in which the passivation layer is exposed; and the maximum width of the metal pad is set to a range of the width to twice the width of the second portion.

    Display device
    5.
    发明授权

    公开(公告)号:US11322486B2

    公开(公告)日:2022-05-03

    申请号:US16968065

    申请日:2018-07-05

    Inventor: Kiseong Jeon

    Abstract: Discussed is a display device including a lower substrate on which a lower electrode is disposed; a flat layer disposed on the lower substrate and having a plurality of holes; a plurality of light-emitting devices respectively disposed in of the plurality of holes; a magnetic portion disposed on the lower substrate and having an magnetic property; and a reaction portion disposed at each of the plurality of light-emitting devices and forming an attractive force with the magnetic portion, wherein a magnetization direction of the magnetic portion is perpendicular to the lower substrate.

    Display device
    6.
    发明授权

    公开(公告)号:US11824049B2

    公开(公告)日:2023-11-21

    申请号:US17715699

    申请日:2022-04-07

    Inventor: Kiseong Jeon

    Abstract: Discussed is a display device, including a substrate, a substrate electrode disposed on the substrate, a magnetic portion disposed and having a magnetic property on an upper surface of the substrate, and a plurality of light-emitting devices respectively disposed on the magnetic portion, wherein the each of the plurality of light-emitting devices includes a magnetic electrode forming an attractive force with the magnetic portion.

    Display device using semiconductor light emitting device and method for manufacturing the same

    公开(公告)号:US12033989B2

    公开(公告)日:2024-07-09

    申请号:US17558309

    申请日:2021-12-21

    CPC classification number: H01L25/0753 H01L25/167 H01L2224/95085

    Abstract: Discussed is a display device, including a substrate having an assembly region and a non-assembly region, semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from each of the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes disposed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, a dielectric layer disposed on the pair electrodes, and bus electrodes electrically connected to the pair electrodes, wherein the pair electrodes are arranged in parallel to each other along a direction in the assembly region, and wherein the bus electrodes are disposed in the non-assembly region.

    Display device using semiconductor light emitting device and method for manufacturing the same

    公开(公告)号:US11239215B2

    公开(公告)日:2022-02-01

    申请号:US16598741

    申请日:2019-10-10

    Abstract: The present disclosure provides a display device, including a substrate, a plurality of semiconductor light emitting devices arranged on the substrate, a first wiring electrode and a second wiring electrode extended from the semiconductor light emitting devices, respectively, to supply an electric signal to the semiconductor light emitting devices, a plurality of pair electrodes arranged on the substrate to generate an electric field when an electric current is supplied, and provided with first and second pair electrodes formed on an opposite side to the first and second wiring electrodes with respect to the semiconductor light emitting devices, and a dielectric layer formed to cover the pair electrodes, wherein the plurality of pair electrodes are arranged in parallel to each other along a direction.

    Hetero-substrate, nitride-based semiconductor light emitting device, and method for manufacturing the same

    公开(公告)号:US09680055B2

    公开(公告)日:2017-06-13

    申请号:US14067171

    申请日:2013-10-30

    CPC classification number: H01L33/12 H01L29/205 H01L33/007

    Abstract: A hetero-substrate, a nitride-based semiconductor light emitting device, and a method of manufacturing the same are provided. The hetero-substrate may include a substrate including a silicon semiconductor, a buffer layer disposed on the substrate, a first semiconductor layer disposed on the buffer layer and including a nitride semiconductor, a second semiconductor layer disposed on the first semiconductor layer and including a first conductive type nitride semiconductor having a first doping concentration, and a stress control structure disposed between the first semiconductor layer and the second semiconductor layer and including at least one stress compensation layer and at least one third semiconductor layer including a first conductive type nitride semiconductor having a second doping concentration that is the same or lower than the first doping concentration.

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