公开(公告)号：US10388804B2

公开(公告)日：2019-08-20

申请号：US15166593

申请日：2016-05-27

Applicant: LG ELECTRONICS INC.

Inventor： Indo Chung ,  Juhong Yang ,  Eunjoo Lee ,  Mihee Heo

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0745 ,  H01L31/0747

Abstract: Disclosed is a method of manufacturing a solar cell, the method including forming a tunneling layer over one surface of a semiconductor substrate, forming a semiconductor layer over the tunneling layer, forming a conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type in the semiconductor layer, and forming an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The forming of the conductive area includes forming a mask layer over the semiconductor layer, forming a doping opening corresponding to at least one of the first conductive area and the second conductive area in the mask layer using a laser, and performing doping using the doping opening.

公开(公告)号：US10181534B2

公开(公告)日：2019-01-15

申请号：US14659053

申请日：2015-03-16

Applicant: LG ELECTRONICS INC.

Inventor： Indo Chung ,  Seunghwan Shim ,  Ilhyoung Jung ,  Jeongbeom Nam

IPC: H01L31/0224 ,  H01L31/0216 ,  H01L31/068 ,  H01L31/0747 ,  H01L31/18

Abstract: Discussed is a solar cell includes a semiconductor substrate, a conductive type region including a first conductive type region and a second conductive type region formed on one surface of the semiconductor substrate, an electrode including a first electrode and a second electrode, wherein the first electrode is connected to the first conductive type region and the second electrode is connected to the second conductive type region, and a passivation layer formed on the conductive type region. The passivation layer includes at least one of silicon nitride and silicon carbide.

公开(公告)号：US09412885B2

公开(公告)日：2016-08-09

申请号：US14861789

申请日：2015-09-22

Applicant: LG ELECTRONICS INC.

Inventor： Juhong Yang ,  Jinah Kim ,  Jeongbeom Nam ,  Dohwan Yang ,  Indo Chung ,  Ilhyoung Jung ,  Hyungjin Kwon

IPC: H01L31/0236 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0352

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547

Abstract: A solar cell can include a substrate of a first conductive type; an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate; an anti-reflection layer positioned on the emitter region; a front electrode part electrically connected to the emitter region; and a back electrode part electrically connected to the substrate, wherein the substrate including a first area formed of single crystal silicon and a second area formed of polycrystalline silicon, wherein a thickness of the anti-reflection layer positioned on the first area is less than a thickness of the anti-reflection layer positioned on the second area, wherein a roughness of an incident surface of the substrate in the first area is different from a roughness of the incident surface of the substrate in the second area, and wherein the emitter region is entirely formed on the incident surface of the substrate.

Abstract translation: 太阳能电池可以包括第一导电类型的衬底; 与第一导电类型相反并且与衬底一起形成p-n结的第二导电类型的发射极区域; 位于发射极区域上的防反射层; 电连接到发射极区域的前电极部分; 以及电连接到所述基板的背面电极部，其中，所述基板包括由单晶硅形成的第一区域和由多晶硅形成的第二区域，其中位于所述第一区域上的所述防反射层的厚度小于 位于第二区域的防反射层的厚度，其中第一区域中的基板的入射表面的粗糙度不同于第二区域中的基板的入射表面的粗糙度，并且其中发射极区域 完全形成在基板的入射表面上。