公开(公告)号：US09349884B2

公开(公告)日：2016-05-24

申请号：US13779025

申请日：2013-02-27

Applicant: LG ELECTRONICS INC.

Inventor： Juhong Yang ,  Dohwan Yang ,  Ilhyoung Jung ,  Jinah Kim

IPC: H01L31/0224 ,  H01L31/056 ,  H01L31/0216 ,  H01L31/068

CPC classification number: H01L31/022458 ,  H01L31/02167 ,  H01L31/022425 ,  H01L31/056 ,  H01L31/068 ,  Y02E10/52 ,  Y02E10/547

Abstract: A solar cell includes a substrate, an emitter region positioned at a first surface of the substrate, a first electrode positioned on the first surface of the substrate, a back passivation layer positioned on a second surface opposite the first surface of the substrate, and a second electrode which is positioned on the back passivation layer and is electrically connected to the substrate through holes of the back passivation layer. The second electrode includes connection electrodes positioned inside the holes of the back passivation layer and a back electrode layer positioned on the connection electrodes and the back passivation layer. An adhesion enhanced layer is positioned between the back electrode layer and the back passivation layer and contains at least one of intrinsic amorphous silicon and intrinsic microcrystalline silicon.

Abstract translation: 太阳能电池包括衬底，位于衬底的第一表面处的发射极区域，位于衬底的第一表面上的第一电极，位于与衬底的第一表面相对的第二表面上的背面钝化层，以及 第二电极位于背部钝化层上，并且通过背面钝化层的孔与基板电连接。 第二电极包括位于背面钝化层的孔内的连接电极和位于连接电极和背面钝化层上的背面电极层。 粘合增强层位于背电极层和背部钝化层之间，并且包含本征非晶硅和本征微晶硅中的至少一种。

公开(公告)号：US11004994B2

公开(公告)日：2021-05-11

申请号：US15154532

申请日：2016-05-13

Applicant: LG ELECTRONICS INC.

Inventor： Indo Chung ,  Juhong Yang ,  Eunjoo Lee ,  Mihee Heo

IPC: H01L31/02 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0236 ,  H01L31/0747 ,  H01L31/049 ,  H01L31/18

Abstract: Disclosed is a solar cell including a semiconductor substrate, a conductive area including a first conductive area and a second conductive area formed on one surface of the semiconductor substrate, a passivation film formed on the conductive area, the passivation film having a contact hole, a protective film formed on the conductive area inside the contact hole, the protective film being formed on at least one of at least a portion of an inner side surface of the contact hole and the passivation film, and an electrode electrically connected to the conductive area through the contact hole with the protective film interposed therebetween.

公开(公告)号：US10777694B2

公开(公告)日：2020-09-15

申请号：US16502812

申请日：2019-07-03

Applicant: LG ELECTRONICS INC.

Inventor： Indo Chung ,  Juhong Yang ,  Eunjoo Lee ,  Mihee Heo

IPC: H01L31/0224 ,  H01L31/068 ,  H01L31/0745 ,  H01L31/0747 ,  H01L31/18 ,  H01L31/0216

Abstract: A solar cell can include a semiconductor substrate; a tunneling layer formed over the semiconductor substrate; a conductive area located over the tunneling layer, the conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type; and an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area, wherein a mark is located in at least one of the first conductive area and the second conductive area, and has a different shape from that of a crystal plane of the semiconductor substrate and the conductive area, and wherein the mark is formed along a longitudinally extending edge of at least one of the first conductive area and the second conductive area.

公开(公告)号：US10388804B2

公开(公告)日：2019-08-20

申请号：US15166593

申请日：2016-05-27

Applicant: LG ELECTRONICS INC.

Inventor： Indo Chung ,  Juhong Yang ,  Eunjoo Lee ,  Mihee Heo

IPC: H01L31/18 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/0224 ,  H01L31/0745 ,  H01L31/0747

Abstract: Disclosed is a method of manufacturing a solar cell, the method including forming a tunneling layer over one surface of a semiconductor substrate, forming a semiconductor layer over the tunneling layer, forming a conductive area including a first conductive area of a first conductive type and a second conductive area of a second conductive type in the semiconductor layer, and forming an electrode including a first electrode connected to the first conductive area and a second electrode connected to the second conductive area. The forming of the conductive area includes forming a mask layer over the semiconductor layer, forming a doping opening corresponding to at least one of the first conductive area and the second conductive area in the mask layer using a laser, and performing doping using the doping opening.

公开(公告)号：US09412885B2

公开(公告)日：2016-08-09

申请号：US14861789

申请日：2015-09-22

Applicant: LG ELECTRONICS INC.

Inventor： Juhong Yang ,  Jinah Kim ,  Jeongbeom Nam ,  Dohwan Yang ,  Indo Chung ,  Ilhyoung Jung ,  Hyungjin Kwon

IPC: H01L31/0236 ,  H01L31/068 ,  H01L31/0216 ,  H01L31/18 ,  H01L31/0368 ,  H01L31/0352

CPC classification number: H01L31/02168 ,  H01L31/02363 ,  H01L31/02366 ,  H01L31/035272 ,  H01L31/03682 ,  H01L31/068 ,  H01L31/182 ,  Y02E10/546 ,  Y02E10/547

Abstract: A solar cell can include a substrate of a first conductive type; an emitter region of a second conductive type opposite the first conductive type and which forms a p-n junction along with the substrate; an anti-reflection layer positioned on the emitter region; a front electrode part electrically connected to the emitter region; and a back electrode part electrically connected to the substrate, wherein the substrate including a first area formed of single crystal silicon and a second area formed of polycrystalline silicon, wherein a thickness of the anti-reflection layer positioned on the first area is less than a thickness of the anti-reflection layer positioned on the second area, wherein a roughness of an incident surface of the substrate in the first area is different from a roughness of the incident surface of the substrate in the second area, and wherein the emitter region is entirely formed on the incident surface of the substrate.

Abstract translation: 太阳能电池可以包括第一导电类型的衬底; 与第一导电类型相反并且与衬底一起形成p-n结的第二导电类型的发射极区域; 位于发射极区域上的防反射层; 电连接到发射极区域的前电极部分; 以及电连接到所述基板的背面电极部，其中，所述基板包括由单晶硅形成的第一区域和由多晶硅形成的第二区域，其中位于所述第一区域上的所述防反射层的厚度小于 位于第二区域的防反射层的厚度，其中第一区域中的基板的入射表面的粗糙度不同于第二区域中的基板的入射表面的粗糙度，并且其中发射极区域 完全形成在基板的入射表面上。