Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications
    11.
    发明授权
    Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications 有权
    用于超浅结合应用的组合调制光学反射和电气系统

    公开(公告)号:US07499168B2

    公开(公告)日:2009-03-03

    申请号:US11656610

    申请日:2007-01-23

    IPC分类号: G01N21/00

    摘要: A metrology tool for semiconductor wafers is disclosed which combines modulated reflectivity measurement with junction photovoltage measurements. The tool includes an intensity modulated pump beam for periodically exciting the sample. A separate probe beam is used to monitor changes in optical reflectivity of the sample. In addition, capacitive electrodes are provided to measure modulated changes in the voltage across the electrodes. These measurements are combined to evaluate the wafer. These measurement can be particularly useful in characterizing ultrashallow junctions.

    摘要翻译: 公开了一种用于半导体晶片的计量工具,其将调制反射率测量与结光电压测量相结合。 该工具包括用于周期性激发样品的强度调制泵浦光束。 单独的探针光束用于监测样品光学反射率的变化。 此外,提供电容电极以测量电极两端的电压的调制变化。 将这些测量结合起来以评估晶片。 这些测量在表征超小结点方面特别有用。

    Method for measuring ion-implanted semiconductors with improved repeatability
    12.
    发明授权
    Method for measuring ion-implanted semiconductors with improved repeatability 失效
    用于测量具有改善的重复性的离子注入半导体的方法

    公开(公告)号:US07330260B2

    公开(公告)日:2008-02-12

    申请号:US11067961

    申请日:2005-02-28

    IPC分类号: G01J4/00

    CPC分类号: G01N21/171 H01L22/12

    摘要: The repeatability of wafer uniformity measurements can be increased by taking spatially averaged measurements of wafer response. By increasing the time over which measurements are obtained, the amount of noise can be significantly reduced, thereby improving the repeatability of the measurements. These measurements can be taken at several locations on the wafer to ensure wafer uniformity. In order to get a stable and repeatable assessment of the wafer process, addressing uncertainties related to damage relaxation or incomplete anneal, an anneal decay factor (ADF) characterization can be performed at a distance away from the TW measurement boxes. From the ADF measurement and the spatially averaged measurements of wafer response, a repeatable assessment of the wafer process can be obtained.

    摘要翻译: 通过采用晶圆响应的空间平均测量可以提高晶片均匀性测量的重复性。 通过增加获得测量的时间,可以显着降低噪声量,从而提高测量的重复性。 这些测量可以在晶片上的几个位置进行,以确保晶片的均匀性。 为了获得对晶圆工艺的稳定和可重复的评估,解决与损伤弛豫或不完全退火有关的不确定性,可以在远离TW测量箱的距离处执行退火衰减因子(ADF)表征。 从ADF测量和晶片响应的空间平均测量,可以获得晶片工艺的可重复评估。

    Photothermal system with spectroscopic pump and probe
    13.
    发明授权
    Photothermal system with spectroscopic pump and probe 有权
    带光谱泵和探头的光热系统

    公开(公告)号:US07280215B2

    公开(公告)日:2007-10-09

    申请号:US10947925

    申请日:2004-09-23

    IPC分类号: G01N21/55

    摘要: The ability of a Modulated Optical Reflectivity (MOR) or Thermal Wave (TW) system to measure characteristics of a sample based on the amplitude and phase of a probe beam reflected from the surface of the sample can be improved by providing a polychromatic pump and/or probe beam that can be scanned over a wide spectral range, such as a range of at least 100 nm. The information contained in the spectral dependencies of a TW response obtained from the sample can be compared and/or fitted to corresponding theoretical dependencies in order to obtain more precise and reliable information about the properties of the particular sample than is available for single-wavelength systems. This information can further be combined with measurements taken for varying spot separations or varying pump source modulation frequency, as well as with photo-thermal radiometry (PTR), spectroscopic reflectometry, and/or ellipsometry measurements.

    摘要翻译: 基于从样品表面反射的探针光束的幅度和相位,调制光学反射率(MOR)或热波(TW)系统测量样品的特性的能力可以通过提供多色泵和/ 或可以在宽光谱范围(例如至少100nm的范围)上扫描的探测光束。 包含在从样本获得的TW响应的频谱相关性中的信息可以与相应的理论依赖性进行比较和/或拟合,以获得关于特定样品的性质的更精确和可靠的信息,而不是可用于单波长系统 。 该信息可以进一步与用于变化的点分离或变化的泵浦源调制频率以及光热辐射测量(PTR),光谱反射测量和/或椭偏仪测量的测量结合。

    Position modulated optical reflectance measurement system for semiconductor metrology
    14.
    发明申请
    Position modulated optical reflectance measurement system for semiconductor metrology 有权
    用于半导体测量的位置调制光反射测量系统

    公开(公告)号:US20050036136A1

    公开(公告)日:2005-02-17

    申请号:US10886110

    申请日:2004-07-07

    IPC分类号: G01N21/63 G01N21/00

    摘要: A system for evaluating semiconductor wafers includes illumination sources for generating probe and pump beams. The pump beam is focused on the surface of a sample and a beam steering mechanism is used to modulate the point of focus in a predetermined pattern. The moving pump beam introduces thermal and plasma waves in the sample causing changes in the reflectivity of the surface of the sample. The probe beam is focused within or adjacent to the area illuminated by the pump beam. The reflected probe beam is gathered and used to measure the changes in reflectivity induced by the pump beam. By analyzing changes in reflectivity, a processor is able to deduce structure and chemical details of the sample.

    摘要翻译: 用于评估半导体晶片的系统包括用于产生探针和泵浦光束的照明源。 泵浦光束聚焦在样品的表面上,并且使用光束转向机构以预定图案调制聚焦点。 移动的泵浦光束在样品中引入热和等离子体波,导致样品表面的反射率的变化。 探测光束聚焦在由泵浦光束照射的区域内或附近。 反射的探针束被聚集并用于测量由泵浦光引起的反射率的变化。 通过分析反射率的变化,处理器能够推断样品的结构和化学细节。

    Methods for depth profiling in semiconductors using modulated optical reflectance technology
    15.
    发明授权
    Methods for depth profiling in semiconductors using modulated optical reflectance technology 有权
    采用调制光学反射技术的半导体深度剖面方法

    公开(公告)号:US07705977B2

    公开(公告)日:2010-04-27

    申请号:US11998118

    申请日:2007-11-28

    IPC分类号: G01N21/00

    摘要: Methods of obtaining dopant and damage depth profile information are disclosed using modulated optical reflectivity (MOR) measurements. In one aspect, the depth profile is constructed using information obtained from various measurements such as the junction depth, junction abruptness and dopant concentration. In another aspect, a full theoretical model is developed. Actual measurements are fed to the model. Using an iterative approach, the actual measurements are compared to theoretical measurements calculated from the model to determine the actual depth profile.

    摘要翻译: 使用调制光学反射率(MOR)测量公开了获得掺杂剂和损伤深度分布信息的方法。 在一个方面,使用从诸如结深度,结突起和掺杂剂浓度的各种测量获得的信息来构建深度分布。 另一方面,开发了一个完整的理论模型。 实际测量被馈送到模型。 使用迭代方法,将实际测量与从模型计算的理论测量值进行比较,以确定实际深度分布。

    Probe beam profile modulated optical reflectance system and methods
    16.
    发明授权
    Probe beam profile modulated optical reflectance system and methods 有权
    探头光束轮廓调制光学反射系统及方法

    公开(公告)号:US07502104B2

    公开(公告)日:2009-03-10

    申请号:US11890712

    申请日:2007-08-06

    IPC分类号: G01N21/00

    摘要: The present invention provides a probe beam profile—modulated optical reflectivity metrology system having a modulated pump source for exciting the sample. A separate probe beam is directed to interact with the sample in a manner so that the rays within the probe beam create a spread of angles of incidence. A detector array simultaneously measures intensities of the rays within the reflected/diffracted probe beam simultaneously at different angles of incidence. The intensity and angle of incidence information is used to analyze the sample.

    摘要翻译: 本发明提供一种具有用于激发样品的调制泵浦源的探测光束分布调制光学反射率测量系统。 引导单独的探针光束以与样品相互作用的方式使得探针束内的光线产生入射角的扩展。 检测器阵列同时以不同的入射角测量反射/衍射探测光束内的光线的强度。 使用入射信息的强度和角度分析样品。

    MODULATED REFLECTANCE MEASUREMENT SYSTEM WITH MULTIPLE WAVELENGTHS
    17.
    发明申请
    MODULATED REFLECTANCE MEASUREMENT SYSTEM WITH MULTIPLE WAVELENGTHS 失效
    具有多个波长的调制反射测量系统

    公开(公告)号:US20080309943A1

    公开(公告)日:2008-12-18

    申请号:US12185297

    申请日:2008-08-04

    IPC分类号: G01N21/55

    摘要: A modulated reflectance measurement system includes three monochromatic diode-based lasers. Each laser can operate as a probe beam or as a pump beam source. The laser outputs are redirected using a series of mirrors and beam splitters to reach an objective lens. The objective lens focuses the laser outputs on a sample. Reflected energy returns through objective and is redirected by a beam splitter to a detector. A lock-in amplifier converts the output of the detector to produce quadrature (Q) and in-phase (I) signals for analysis. A Processor uses the Q and/or I signals to analyze the sample. By changing the number of lasers used as pump or probe beam sources, the measurement system can be optimized to measure a range of different samples types.

    摘要翻译: 调制反射测量系统包括三个基于单色二极管的激光器。 每个激光器可以作为探测光束或作为泵浦光源操作。 使用一系列反射镜和分束器将激光输出重定向到达物镜。 物镜将激光输出聚焦在样品上。 反射能量通过目标返回,并被分束器重定向到检测器。 锁定放大器转换检测器的输出以产生正交(Q)和同相(I)信号用于分析。 处理器使用Q和/或I信号来分析样本。 通过改变用作泵浦或探针光束源的激光器的数量,可以优化测量系统以测量不同样品类型的范围。

    Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications
    19.
    发明申请
    Combined modulated optical reflectance and electrical system for ultra-shallow junctions applications 有权
    用于超浅结合应用的组合调制光学反射和电气系统

    公开(公告)号:US20070188761A1

    公开(公告)日:2007-08-16

    申请号:US11656610

    申请日:2007-01-23

    IPC分类号: G01N21/00

    摘要: A metrology tool for semiconductor wafers is disclosed which combines modulated reflectivity measurement with junction photovoltage measurements. The tool includes an intensity modulated pump beam for periodically exciting the sample. A separate probe beam is used to monitor changes in optical reflectivity of the sample. In addition, capacitive electrodes are provided to measure modulated changes in the voltage across the electrodes. These measurements are combined to evaluate the wafer. These measurement can be particularly useful in characterizing ultrashallow junctions.

    摘要翻译: 公开了一种用于半导体晶片的计量工具,其将调制反射率测量与结光电压测量相结合。 该工具包括用于周期性激发样品的强度调制泵浦光束。 单独的探针光束用于监测样品光学反射率的变化。 此外,提供电容电极以测量电极两端的电压的调制变化。 将这些测量结合起来以评估晶片。 这些测量在表征超小结点方面特别有用。

    Method for measuring peak carrier concentration in ultra-shallow junctions
    20.
    发明申请
    Method for measuring peak carrier concentration in ultra-shallow junctions 有权
    测量超浅结点峰值载流子浓度的方法

    公开(公告)号:US20060166385A1

    公开(公告)日:2006-07-27

    申请号:US11334962

    申请日:2006-01-19

    IPC分类号: H01L21/66 G01R31/26

    摘要: A method is disclosed for determining peak carrier concentration in ultra shallow junctions of semiconductor samples. A region of the surface of the sample is periodically excited. The effects of the excitation are monitored by a probe beam. Synchronous detection produces in-phase (I) and quadrature (Q) signals. These signals are compared to signals obtained from calibration samples to evaluate peak carrier concentration.

    摘要翻译: 公开了一种用于确定半导体样品的超浅结中峰值载流子浓度的方法。 样品表面的周期性地被激发。 激发的影响由探测光束监测。 同步检测产生同相(I)和正交(Q)信号。 将这些信号与从校准样品获得的信号进行比较,以评估峰值载流子浓度。