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104 条记录 (耗时 0.093 秒)

    Endpoint detection in chemical-mechanical polishing of cloisonne structures
    12.
    发明授权
    Endpoint detection in chemical-mechanical polishing of cloisonne structures 失效
    化妆机械抛光景泰蓝结构的端点检测

    公开(公告)号：US06291351B1

    公开(公告)日：2001-09-18

    申请号：US09605729

    申请日：2000-06-28

    申请人： Leping Li ,  Steven George Barbee ,  Eric James Lee ,  Francisco A. Martin ,  Cong Wei

    发明人： Leping Li ,  Steven George Barbee ,  Eric James Lee ,  Francisco A. Martin ,  Cong Wei

    IPC分类号： H01L21302

    CPC分类号： B24B37/013 ,  B24B37/042 ,  B24B49/12 ,  G11B5/3116 ,  G11B5/3163

    摘要： A method is described for fabricating a cloisonné structure, in which a top surface of a metal oxide layer is made coplanar with a top surface of a metallic structure formed on a substrate. A nitride layer is deposited on at least the top surface of the metallic structure, and the metal oxide layer is deposited over the metallic structure and the nitride layer. The metal oxide layer is then polished by a chemical-mechanical polishing (CMP) process using a slurry, to expose the nitride layer on the top surface of the metallic structure. Polishing of the nitride layer causes ammonia to be generated in the slurry. The ammonia is extracted as a gas from the slurry, and a signal is generated in accordance with the ammonia concentration. The CMP process is terminated in accordance with a change in the signal. In a preferred embodiment, the metal oxide is aluminum oxide, the nitride is aluminum nitride, and the nitride layer is deposited as a conformal layer on the substrate and the metallic structure.

    摘要翻译： 描述了一种用于制造景泰蓝结构的方法，其中金属氧化物层的顶表面与形成在基底上的金属结构的顶表面共面。 氮化物层沉积在金属结构的至少顶表面上，金属氧化物层沉积在金属结构和氮化物层上。 然后通过使用浆料的化学机械抛光（CMP）工艺来抛光金属氧化物层，以暴露金属结构的顶表面上的氮化物层。 氮化物层的抛光在浆料中产生氨。 从浆液中提取氨作为气体，根据氨浓度产生信号。 CMP过程根据信号的变化而终止。 在优选的实施方案中，金属氧化物是氧化铝，氮化物是氮化铝，氮化物层作为保形层沉积在衬底和金属结构上。

    Enhanced endpoint detection for wet etch process control
    20.
    发明授权
    Enhanced endpoint detection for wet etch process control 失效

    公开(公告)号：US06989683B2

    公开(公告)日：2006-01-24

    申请号：US10910895

    申请日：2004-08-04

    申请人： Leping Li ,  Steven G. Barbee

    发明人： Leping Li ,  Steven G. Barbee

    IPC分类号： G01R31/02 ,  G01N27/02

    CPC分类号： H01L21/67253 ,  C23F1/00

    摘要： Improved endpoint detection is obtained for wet etch and/or other chemical processes involving in situ measurement of bath impedance. The endpoint detection uses a measurement apparatus having a measurement circuit with a capacitor designed to alter the phase angle of the circuit. The capacitor is preferably a variable capacitor which is used to set the initial phase angle of the measurement circuit to about zero. The methods using the improved detection enable etch to be more precisely controlled even under conditions where noise would otherwise adversely impact determination of the endpoint.