摘要:
A lithographic apparatus is disclosed. The apparatus includes a source for supplying hydrogen radicals, a guide for use in conjunction with the source, for directing hydrogen radicals to an application surface to be targeted by the hydrogen radicals. The guide is provided with a coating having a hydrogen radical recombination constant of less than 0.2. In this way, the radicals can be transported with reduced losses and are able to better interact with remaining contaminants on application surfaces, such as mirror surfaces.
摘要:
A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas and one or more additional compounds selected from the group of hydrocarbon compounds and silane compounds in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.
摘要:
A cleaning arrangement for a lithographic apparatus module may be provided in a collector. The cleaning arrangement includes a hydrogen radical source configured to provide a hydrogen radical containing gas to at least part of the module and a pump configured to pump gas through the module such that a flow speed of the hydrogen radical containing gas provided through at least part of the module is at least 1 m/s. The cleaning arrangement may also include a gas shutter configured to modulate a flow of the hydrogen radical containing gas to at least part of the module, a buffer volume of at least 1 m3 in communication with the module, and a pump configured to provide a gas pressure in the buffer volume between 0.001 mbar (0.1 Pa) and 1 mbar (100 Pa). The cleaning arrangement may further include a gas return system.
摘要:
A device is arranged to measure a quantity relating to radiation. The device includes a sensor configured to measure the quantity, a screen arranged to protect the sensor from incoming particles emitted from a source configured to emit extreme ultraviolet radiation, and a mirror configured to redirect extreme ultraviolet radiation emitted by the source, past the screen, to the sensor.
摘要:
The present invention provides a luminescence sensor (2), such as e.g. a luminescence biosensor, comprising a multi-layer structure. The multi-layer structure comprises at least a first layer (2a) formed of a first material and a second layer (2b) formed of a second material. The first material has a first binding capacity towards luminophores and the second material has a second binding capacity towards luminophores, the first binding capacity being different from the second binding capacity. The luminescence sensor (2) according to the present invention shows a high sensitivity because it provides preferred binding sites for luminophores at locations where the combined excitation and detection efficiency is the highest.
摘要:
An EUV lithographic apparatus includes an EUV radiation source, an optical element and a cleaning device. The cleaning device includes a hydrogen radical source and a flow tube in communication with the hydrogen radical source. The cleaning device is configured to provide a flow of hydrogen radicals and the flow tube is arranged to provide a hydrogen radical flow at a predetermined position within the lithographic apparatus, for example for cleaning a collector mirror.
摘要:
A radiation system for generating a beam of radiation that defines an optical axis is provided. The radiation system includes a plasma produced discharge source for generating EUV radiation. The discharge source includes a pair of electrodes constructed and arranged to be provided with a voltage difference, and a system for producing a plasma between the pair of electrodes so as to provide a discharge in the plasma between the electrodes. The radiation system also includes a debris catching shield for catching debris from the electrodes. The debris catching shield is constructed and arranged to shield the electrodes from a line of sight provided in a predetermined spherical angle relative the optical axis, and to provide an aperture to a central area between the electrodes in the line of sight.
摘要:
The invention relates to a radiation system for generating electromagnetic radiation. The radiation system includes a pair of electrodes constructed and arranged to generate plasma of a first substance and a pinch in the plasma. The radiation system also includes a plasma recombination surface that is arranged proximate to the pinch, and is configured to neutralize a plurality of plasma particles.
摘要:
A cleaning arrangement is configured to clean an EUV optic of an EUV lithographic apparatus. The partial radical pressure ranges between 0.1-10 Pa. The cleaning arrangement can be configured inside a cleaning cocoon of the lithographic apparatus for offline cleaning. It can also be configured at particular positions inside the apparatus to clean nearby optics during production. In the pressure range of 0.1-10 Pa the penetration of atomic hydrogen into the optical devices is high, while the recombination to molecular hydrogen and hydrogen consumption is limited.
摘要:
A spectral purity filter includes an aperture, the aperture having a diameter, wherein the spectral purity filter is configured to enhance the spectral purity of a radiation beam by reflecting radiation of a first wavelength and allowing at least a portion of radiation of a second wavelength to transmit through the aperture, the first wavelength being larger than the second wavelength. The spectral purity filter may be used to improve the spectral purity of an Extreme Ultra-Violet (EUV) radiation beam.