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公开(公告)号：US20170133433A1
公开(公告)日：2017-05-11
申请号：US15414144
申请日：2017-01-24
发明人： Jong Won Lee , Gianpaolo Spadini , Derchang Kau
摘要： Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
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公开(公告)号：US20160260776A1
公开(公告)日：2016-09-08
申请号：US15058810
申请日：2016-03-02
CPC分类号： H01L27/2463 , G11C13/0004 , G11C13/0023 , G11C13/004 , G11C13/0069 , G11C13/0097 , H01L27/24 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
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公开(公告)号：US20150001458A1
公开(公告)日：2015-01-01
申请号：US14320275
申请日：2014-06-30
发明人： Jong Won Lee , Gianpaolo Spadini , Derchang Kau
CPC分类号： H01L27/2463 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1608 , H01L45/1675
摘要： Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
摘要翻译： 本文公开的主题涉及存储器件，更具体地涉及自对准交叉点相变存储器开关阵列及其制造方法。
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公开(公告)号：US11563055B2
公开(公告)日：2023-01-24
申请号：US16877166
申请日：2020-05-18
发明人： Jong Won Lee , Gianpaolo Spadini , Derchang Kau
摘要： Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
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公开(公告)号：US10692930B2
公开(公告)日：2020-06-23
申请号：US15414144
申请日：2017-01-24
发明人： Jong Won Lee , Gianpaolo Spadini , Derchang Kau
摘要： Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
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公开(公告)号：US20170263684A1
公开(公告)日：2017-09-14
申请号：US15481208
申请日：2017-04-06
CPC分类号： H01L27/2463 , G11C13/0004 , G11C13/0023 , G11C13/004 , G11C13/0069 , G11C13/0097 , H01L27/24 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1246 , H01L45/1253 , H01L45/141 , H01L45/142 , H01L45/143 , H01L45/144 , H01L45/1675 , H01L45/1683
摘要： Methods of forming memory cells comprising phase change and/or chalcogenide materials are disclosed. In one aspect, the method includes providing a lower line stack extending in a first direction, the lower line stack comprising a sacrificial line over a lower conductive line. The method further includes forming a chalcogenide line extending in the first direction by selectively removing the sacrificial material of the sacrificial line and replacing the sacrificial line with a chalcogenide material.
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公开(公告)号：US09590012B2
公开(公告)日：2017-03-07
申请号：US14320275
申请日：2014-06-30
发明人： Jong Won Lee , Gianpaolo Spadini , Derchang Kau
IPC分类号： H01L27/108 , H01L27/24 , H01L45/00
CPC分类号： H01L27/2463 , H01L27/2427 , H01L45/06 , H01L45/1233 , H01L45/1253 , H01L45/144 , H01L45/1608 , H01L45/1675
摘要： Subject matter disclosed herein relates to a memory device, and more particularly to a self-aligned cross-point phase change memory-switch array and methods of fabricating same.
摘要翻译： 本文公开的主题涉及存储器件，更具体地涉及自对准交叉点相变存储器开关阵列及其制造方法。
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