公开(公告)号：US11733929B2

公开(公告)日：2023-08-22

申请号：US17819857

申请日：2022-08-15

Applicant: Micron Technology, Inc.

Inventor： Michael Sheperek ,  Larry J. Koudele ,  Steve Kientz

IPC: G06F3/00 ,  G06F3/06 ,  G11C16/26 ,  G11C16/04

CPC classification number: G06F3/0659 ,  G06F3/0604 ,  G06F3/0679 ,  G11C16/26 ,  G11C16/0483

Abstract: A memory device includes a processing device configured to iteratively update a center read level according to a first step size after reading a subset of memory cells according to a set of read levels including the center read level; track an update direction for the processing device to use when iteratively updating the center read level, wherein the update direction corresponds to an increase or a decrease in the center read level; detect a change condition based on updating the center read level according to the first step size; and iteratively update the center read level according to a second step size based on detection of the change condition.

公开(公告)号：US11545227B2

公开(公告)日：2023-01-03

申请号：US17070526

申请日：2020-10-14

Applicant: Micron Technology, Inc.

Inventor： Michael Sheperek ,  Bruce A. Liikanen ,  Steve Kientz ,  Anita Ekren ,  Gerald Cadloni

IPC: G11C16/34 ,  G11C16/10 ,  G11C7/04 ,  G11C16/32 ,  G11C16/30 ,  G11C16/26

Abstract: A measure associated with a characteristic of a die of a memory device is obtained. It is determined whether the measure satisfies a first criterion to group one or more die into a first die family. If it is determined that the measure satisfies the first criterion, the die is associated with the first die family.

公开(公告)号：US20220115079A1

公开(公告)日：2022-04-14

申请号：US17070526

申请日：2020-10-14

Applicant: Micron Technology, Inc.

Inventor： Michael Sheperek ,  Bruce A. Liikanen ,  Steve Kientz ,  Anita Ekren ,  Gerald Cadloni

IPC: G11C16/34 ,  G11C16/10 ,  G11C16/26 ,  G11C16/32 ,  G11C16/30 ,  G11C7/04

Abstract: A measure associated with a characteristic of a die of a memory device is obtained. It is determined whether the measure satisfies a first criterion to group one or more die into a first die family. If it is determined that the measure satisfies the first criterion, the die is associated with the first die family.

公开(公告)号：US20200133510A1

公开(公告)日：2020-04-30

申请号：US16170423

申请日：2018-10-25

Applicant: Micron Technology, Inc.

Inventor： Larry J. Koudele ,  Bruce A. Liikanen ,  Steve Kientz

IPC: G06F3/06

Abstract: A dynamic temperature compensation trim for use in temperature compensating a memory operation on a memory call of a memory component. The dynamic temperature compensation trim is based on a temperature of the memory component and based on in-service data for the memory operation on the memory cell. A register for the memory operation is modified based on the dynamic temperature compensation trim.

公开(公告)号：US20190355426A1

公开(公告)日：2019-11-21

申请号：US15981810

申请日：2018-05-16

Applicant: Micron Technology, Inc.

Inventor： Michael Sheperek ,  Larry J. Koudele ,  Steve Kientz

IPC: G11C16/26 ,  G06F3/06

Abstract: A system comprises a memory device comprising a plurality of memory cells; and a processing device coupled to the memory device, the processing device configured to iteratively: determine a set of read results based on reading a subset of memory cells according to read levels maintained within optimization trim data, wherein the optimization trim data initially comprises at least one read level in addition to a target trim; calibrate the set of read levels based on the set of read results; and remove the calibrated read levels from the optimization trim data when the calibrated read levels satisfy a calibration condition.

公开(公告)号：US11675509B2

公开(公告)日：2023-06-13

申请号：US17084540

申请日：2020-10-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shane Nowell ,  Michael Sheperek ,  Larry J Koudele ,  Bruce A Liikanen ,  Steve Kientz

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/0688

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to open a first block family associated with the memory device; assign a first cursor of a plurality of cursors of the memory device to the first block family; responsive to programming a first block associated with the first cursor, associate the first block with the first block family; open, while the first block family is open, a second block family associated with the memory device; assign a second cursor of the plurality of cursors of the memory device to the second block family; and responsive to programming a second block associated with the second cursor, associate the second block with the second block family.

公开(公告)号：US20230115960A1

公开(公告)日：2023-04-13

申请号：US18081004

申请日：2022-12-14

Applicant: Micron Technology, Inc.

Inventor： Michael Sheperek ,  Bruce A. Liikanen ,  Steve Kientz ,  Anita Ekren ,  Gerald Cadloni

IPC: G11C16/34 ,  G11C16/10 ,  G11C7/04 ,  G11C16/32 ,  G11C16/30 ,  G11C16/26

Abstract: A method includes associating, by a processing device, a set of dies of a block family with a die family, wherein the block family is associated with a first threshold voltage offset bin for voltage offsets to be applied in a read operation; and responsive to detecting a triggering event, associating each die of the set of dies with a second threshold voltage offset bin for voltage offsets to be applied in a read operation, wherein the second threshold voltage offset bin is selected based on a representative die of the set of dies associated with the die family.

公开(公告)号：US20220269420A1

公开(公告)日：2022-08-25

申请号：US17741414

申请日：2022-05-10

Applicant: Micron Technology, Inc.

Inventor： Larry J. Koudele ,  Bruce A. Liikanen ,  Steve Kientz

IPC: G06F3/06 ,  G11C7/04

Abstract: A dynamic temperature compensation trim for use in temperature compensating a memory operation on a memory call of a memory component. The dynamic temperature compensation trim is based on a temperature of the memory component and based on in-service data for the memory operation on the memory cell. A register for the memory operation is modified based on the dynamic temperature compensation trim.

公开(公告)号：US11360670B2

公开(公告)日：2022-06-14

申请号：US17081901

申请日：2020-10-27

Applicant: Micron Technology, Inc.

Inventor： Larry J. Koudele ,  Bruce A. Liikanen ,  Steve Kientz

IPC: G06F3/06 ,  G11C7/04 ,  G11C29/02 ,  G11C16/34

Abstract: A dynamic temperature compensation trim for use in temperature compensating a memory operation on a memory call of a memory component. The dynamic temperature compensation trim is based on a temperature of the memory component and based on in-service data for the memory operation on the memory cell. A register for the memory operation is modified based on the dynamic temperature compensation trim.

公开(公告)号：US20210042041A1

公开(公告)日：2021-02-11

申请号：US17081901

申请日：2020-10-27

Applicant: Micron Technology, Inc.

Inventor： Larry J. Koudele ,  Bruce A. Liikanen ,  Steve Kientz

IPC: G06F3/06 ,  G11C7/04 ,  G11C16/34 ,  G11C29/02

Abstract: A dynamic temperature compensation trim for use in temperature compensating a memory operation on a memory call of a memory component. The dynamic temperature compensation trim is based on a temperature of the memory component and based on in-service data for the memory operation on the memory cell. A register for the memory operation is modified based on the dynamic temperature compensation trim.