公开(公告)号：US11735254B2

公开(公告)日：2023-08-22

申请号：US17217772

申请日：2021-03-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shane Nowell ,  Steven Michael Kientz ,  Michael Sheperek ,  Mustafa N Kaynak ,  Kishore Kumar Muchherla ,  Larry J Koudele ,  Bruce A Liikanen

IPC: G11C11/34 ,  G11C11/56 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30

CPC classification number: G11C11/5642 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30

Abstract: A method can include receiving a request to read data from a block of a memory device coupled with a processing device, determining, using a data structure mapping block identifiers to corresponding voltage distribution parameter values, a voltage distribution parameter value associated with the block of the memory device, determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the set of read levels corresponds to a respective voltage distribution of at least one memory cell comprised by the block, and reading, using the determined set of read levels, data from the block of the memory device.

公开(公告)号：US11675509B2

公开(公告)日：2023-06-13

申请号：US17084540

申请日：2020-10-29

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shane Nowell ,  Michael Sheperek ,  Larry J Koudele ,  Bruce A Liikanen ,  Steve Kientz

IPC: G06F3/06

CPC classification number: G06F3/064 ,  G06F3/0604 ,  G06F3/0688

Abstract: An example memory sub-system includes a memory device and a processing device, operatively coupled to the memory device. The processing device is configured to open a first block family associated with the memory device; assign a first cursor of a plurality of cursors of the memory device to the first block family; responsive to programming a first block associated with the first cursor, associate the first block with the first block family; open, while the first block family is open, a second block family associated with the memory device; assign a second cursor of the plurality of cursors of the memory device to the second block family; and responsive to programming a second block associated with the second cursor, associate the second block with the second block family.

公开(公告)号：US20220319589A1

公开(公告)日：2022-10-06

申请号：US17217772

申请日：2021-03-30

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shane Nowell ,  Steven Michael Kientz ,  Michael Sheperek ,  Mustafa N Kaynak ,  Kishore Kumar Muchherla ,  Larry J Koudele ,  Bruce A Liikanen

IPC: G11C11/56 ,  G11C16/10 ,  G11C16/30 ,  G11C16/26

Abstract: A method can include receiving a request to read data from a block of a memory device coupled with a processing device, determining, using a data structure mapping block identifiers to corresponding voltage distribution parameter values, a voltage distribution parameter value associated with the block of the memory device, determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the set of read levels corresponds to a respective voltage distribution of at least one memory cell comprised by the block, and reading, using the determined set of read levels, data from the block of the memory device.

公开(公告)号：US11705193B2

公开(公告)日：2023-07-18

申请号：US17164636

申请日：2021-02-01

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shane Nowell ,  Steven Michael Kientz ,  Michael Sheperek ,  Mustafa N Kaynak ,  Kishore Kumar Muchherla ,  Larry J Koudele ,  Bruce A Liikanen

IPC: G11C11/34 ,  G11C11/56 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30

CPC classification number: G11C11/5642 ,  G11C11/5628 ,  G11C16/10 ,  G11C16/26 ,  G11C16/30

Abstract: A method can include receiving a request to read data from a memory cell of a memory device coupled with the processing device, determining a voltage distribution parameter value associated with the memory cell, determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the determined set of read levels corresponds to a respective voltage distribution of the memory cell, and reading, using the determined set of read levels, data from the memory cell. The voltage distribution parameter value can be determined by identifying a particular voltage distribution of the memory cell by sampling the memory cell at a plurality of voltage levels, and determining the voltage distribution parameter value based on the particular voltage distribution. The voltage distribution parameter value can be a voltage value that is included in the particular voltage distribution.

公开(公告)号：US20220246207A1

公开(公告)日：2022-08-04

申请号：US17164636

申请日：2021-02-01

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Shane Nowell ,  Steven Michael Kientz ,  Michael Sheperek ,  Mustafa N Kaynak ,  Kishore Kumar Muchherla ,  Larry J Koudele ,  Bruce A Liikanen

IPC: G11C11/56 ,  G11C16/30 ,  G11C16/26 ,  G11C16/10

Abstract: A method can include receiving a request to read data from a memory cell of a memory device coupled with the processing device, determining a voltage distribution parameter value associated with the memory cell, determining a set of read levels associated with the voltage distribution parameter value, wherein each read level in the determined set of read levels corresponds to a respective voltage distribution of the memory cell, and reading, using the determined set of read levels, data from the memory cell. The voltage distribution parameter value can be determined by identifying a particular voltage distribution of the memory cell by sampling the memory cell at a plurality of voltage levels, and determining the voltage distribution parameter value based on the particular voltage distribution. The voltage distribution parameter value can be a voltage value that is included in the particular voltage distribution.