公开(公告)号：US20160329486A1

公开(公告)日：2016-11-10

申请号：US14706182

申请日：2015-05-07

Applicant: Micron Technology, Inc.

Inventor： Jonathan D. Harms ,  Wei Chen ,  Sunil S. Murthy ,  Witold Kula

IPC: H01L43/02

CPC classification number: H01L43/08

Abstract: A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed.

Abstract translation: 磁性隧道结具有包括磁记录材料的导电第一磁极。 导电的第二磁电极与第一电极间隔开并且包括磁性参考材料。 非磁性隧道绝缘体材料位于第一和第二电极之间。 第一电极的磁记录材料包括第一磁性区域，与第一磁性区域间隔开的第二磁性区域和与第一和第二磁性区域间隔开的第三磁性区域。 第一非磁性绝缘体金属氧化物包含区域在第一和第二磁性区域之间。 第二非磁性绝缘体金属氧化物包含区域在第二和第三磁性区域之间。 公开了其他实施例。

公开(公告)号：US20160308118A1

公开(公告)日：2016-10-20

申请号：US15194875

申请日：2016-06-28

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/12 ,  H01L43/08

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

Abstract translation: 公开了磁存储单元，制造方法，半导体器件结构和存储器系统。 磁芯芯包括被配置为呈现垂直磁取向的至少一个磁区（例如，自由区或固定区），至少一个氧化物基区域，其可以是隧道结区域或氧化物封盖区域， 和至少一个磁性界面区域，其可以由铁（Fe）构成或由铁构成。 在一些实施例中，磁性界面区域与至少一个基于氧化物的区域相隔一个磁性区域。 磁性界面区域的存在增强了磁性电池芯的垂直磁各向异性（PMA）强度。 在一些实施例中，与缺少磁性界面区域的相同的磁性单元芯结构相比，PMA强度可以提高50％以上。

公开(公告)号：US20140264663A1

公开(公告)日：2014-09-18

申请号：US13797185

申请日：2013-03-12

Applicant: MICRON TECHNOLOGY, INC.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: H01L43/02 ,  H01L43/12

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L43/08 ,  H01L43/10 ,  H01L43/12

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

Abstract translation: 公开了磁存储单元，制造方法，半导体器件结构和存储器系统。 磁芯芯包括被配置为呈现垂直磁取向的至少一个磁区（例如，自由区或固定区），至少一个氧化物基区域，其可以是隧道结区域或氧化物封盖区域， 和至少一个磁性界面区域，其可以由铁（Fe）构成或由铁构成。 在一些实施例中，磁性界面区域与至少一个基于氧化物的区域相隔一个磁性区域。 磁性界面区域的存在增强了磁性电池芯的垂直磁各向异性（PMA）强度。 在一些实施例中，与缺少磁性界面区域的相同的磁性单元芯结构相比，PMA强度可以提高50％以上。

公开(公告)号：US10720569B2

公开(公告)日：2020-07-21

申请号：US16434634

申请日：2019-06-07

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Johnathan D. Harms

IPC: H01L43/02 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

公开(公告)号：US10276781B2

公开(公告)日：2019-04-30

申请号：US15952507

申请日：2018-04-13

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Sunil Murthy ,  Witold Kula

IPC: G11B5/31 ,  H01L43/02 ,  H01L43/12 ,  H01L43/08 ,  H01L43/10 ,  G11C11/16

Abstract: Magnetic memory cells, methods of fabrication, semiconductor device structures, and memory systems are disclosed. A magnetic cell core includes at least one magnetic region (e.g., a free region or a fixed region) configured to exhibit a vertical magnetic orientation, at least one oxide-based region, which may be a tunnel junction region or an oxide capping region, and at least one magnetic interface region, which may comprise or consist of iron (Fe). In some embodiments, the magnetic interface region is spaced from at least one oxide-based region by a magnetic region. The presence of the magnetic interface region enhances the perpendicular magnetic anisotropy (PMA) strength of the magnetic cell core. In some embodiments, the PMA strength may be enhanced more than 50% compared to that of the same magnetic cell core structure lacking the magnetic interface region.

公开(公告)号：US10134978B2

公开(公告)日：2018-11-20

申请号：US15667364

申请日：2017-08-02

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Jonathan D. Harms ,  Sunil Murthy

IPC: H01L43/02 ,  H01L43/08 ,  H01L43/12 ,  G11C11/16 ,  H01L27/22

Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.

公开(公告)号：US20180294403A1

公开(公告)日：2018-10-11

申请号：US16006588

申请日：2018-06-12

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

IPC: H01L43/02 ,  H01L27/22 ,  H01L43/10 ,  H01L43/08 ,  G11C11/16

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/224 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

公开(公告)号：US10062835B2

公开(公告)日：2018-08-28

申请号：US15588994

申请日：2017-05-08

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Witold Kula ,  Manzar Siddik ,  Suresh Ramarajan ,  Jonathan D. Harms

IPC: H01L43/02 ,  H01L43/10 ,  H01L27/22

CPC classification number: H01L43/02 ,  G11C11/161 ,  H01L27/224 ,  H01L43/08 ,  H01L43/10

Abstract: A magnetic tunnel junction comprises a conductive first magnetic electrode comprising magnetic recording material, a conductive second magnetic electrode spaced from the first electrode and comprising magnetic reference material, and a non-magnetic tunnel insulator material between the first and second electrodes. The magnetic reference material of the second electrode comprises a synthetic antiferromagnetic construction comprising two spaced magnetic regions one of which is closer to the tunnel insulator material than is the other. The one magnetic region comprises a polarizer region comprising CoxFeyBz where “x” is from 0 to 90, “y” is from 10 to 90, and “z” is from 10 to 50. The CoxFeyBz is directly against the tunnel insulator. A non-magnetic region comprising an Os-containing material is between the two spaced magnetic regions. The other magnetic region comprises a magnetic Co-containing material. Other embodiments are disclosed.

公开(公告)号：US09960346B2

公开(公告)日：2018-05-01

申请号：US14706182

申请日：2015-05-07

Applicant: Micron Technology, Inc.

Inventor： Jonathan D. Harms ,  Wei Chen ,  Sunil S. Murthy ,  Witold Kula

IPC: H01L43/08

CPC classification number: H01L43/08

Abstract: A magnetic tunnel junction has a conductive first magnetic electrode comprising magnetic recording material. A conductive second magnetic electrode is spaced from the first electrode and comprises magnetic reference material. A non-magnetic tunnel insulator material is between the first and second electrodes. The magnetic recording material of the first electrode comprises a first magnetic region, a second magnetic region spaced from the first magnetic region, and a third magnetic region spaced from the first and second magnetic regions. A first non-magnetic insulator metal oxide-comprising region is between the first and second magnetic regions. A second non-magnetic insulator metal oxide-comprising region is between the second and third magnetic regions. Other embodiments are disclosed.

公开(公告)号：US20170358737A1

公开(公告)日：2017-12-14

申请号：US15667364

申请日：2017-08-02

Applicant: Micron Technology, Inc.

Inventor： Wei Chen ,  Jonathan D. Harms ,  Sunil Murthy

IPC: H01L43/08 ,  H01L43/12 ,  H01L27/22

CPC classification number: H01L43/08 ,  G11C11/161 ,  H01L27/228 ,  H01L43/12

Abstract: A magnetic cell structure comprises a seed material including tantalum, platinum, and ruthenium. The seed material comprises a platinum portion overlying a tantalum portion, and a ruthenium portion overlying the platinum portion. The magnetic cell structure comprises a magnetic region overlying the seed material, an insulating material overlying the magnetic region, and another magnetic region overlying the insulating material. Semiconductor devices including the magnetic cell structure, methods of forming the magnetic cell structure and the semiconductor devices are also disclosed.