公开(公告)号：US07750326B2

公开(公告)日：2010-07-06

申请号：US11150466

申请日：2005-06-13

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

IPC分类号： H05G2/00

CPC分类号： G03F7/70925 ,  B82Y10/00 ,  G03F7/70166 ,  G03F7/70916

摘要： A lithographic apparatus is disclosed. The apparatus includes a source for supplying hydrogen radicals, a guide for use in conjunction with the source, for directing hydrogen radicals to an application surface to be targeted by the hydrogen radicals. The guide is provided with a coating having a hydrogen radical recombination constant of less than 0.2. In this way, the radicals can be transported with reduced losses and are able to better interact with remaining contaminants on application surfaces, such as mirror surfaces.

摘要翻译： 公开了一种光刻设备。 该装置包括用于提供氢自由基的源，与源结合使用的引导件，用于将氢自由基引导到由氢自由基靶向的施用表面。 引导件具有氢自由基复合常数小于0.2的涂层。 以这种方式，可以以较少的损失运输自由基，并且能够更好地与应用表面（例如镜面）上的剩余污染物相互作用。

公开(公告)号：US07463413B2

公开(公告)日：2008-12-09

申请号：US11337807

申请日：2006-01-24

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

IPC分类号： F21V9/04 ,  F21V9/06 ,  G02B5/08 ,  G02B5/20

CPC分类号： G02B1/10 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/0891 ,  G02B5/283 ,  G03F1/24 ,  G03F7/70575 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

摘要： A multi-layer mirror includes on top of the multi-layer mirror a spectral purity enhancement layer, for example for application in an EUV lithographic apparatus. This spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may optionally be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. Hence, multi-layer mirrors with the following configurations are possible: multi-layer mirror/first spectral purity enhancement layer; multi-layer mirror/intermediate layer/first spectral purity enhancement layer; and multi-layer mirror/second spectral purity enhancement layer/intermediate layer/first spectral purity enhancement layer. The spectral purity of normal incidence radiation may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.

摘要翻译： 多层反射镜在多层镜的顶部包括光谱纯度增强层，例如用于EUV光刻设备中。 该光谱纯度增强层包括第一光谱纯度增强层，但是在多层反射镜和第一光谱纯度增强层之间，可选地可以有中间层或第二光谱纯度增强层和中间层。 因此，具有以下配置的多层反射镜是可能的：多层镜/第一光谱纯度增强层; 多层镜/中间层/第一光谱纯度增强层; 和多层镜/第二光谱纯度增强层/中间层/第一光谱纯度增强层。 可以增强正常入射辐射的光谱纯度，使得DUV辐射比EUV辐射相对更强。

公开(公告)号：US20080273188A1

公开(公告)日：2008-11-06

申请号：US11797358

申请日：2007-05-02

申请人： Wouter Anthon Soer ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Niels Machiel Driessen ,  Vadim Yevgenyevich Banine ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Derk Jan Wilfred Klunder

发明人： Wouter Anthon Soer ,  Maarten Marinus Johannes Wilhelmus Van Herpen ,  Niels Machiel Driessen ,  Vadim Yevgenyevich Banine ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Derk Jan Wilfred Klunder

IPC分类号： G03B27/74

CPC分类号： G03F7/70916 ,  G03F7/70558 ,  G03F7/7085

摘要： A device is arranged to measure a quantity relating to radiation. The device includes a sensor configured to measure the quantity, a screen arranged to protect the sensor from incoming particles emitted from a source configured to emit extreme ultraviolet radiation, and a mirror configured to redirect extreme ultraviolet radiation emitted by the source, past the screen, to the sensor.

摘要翻译： 一个装置被安排来测量与辐射有关的数量。 该装置包括被配置为测量该数量的传感器，布置成保护传感器免受从被配置为发射极紫外辐射的源射出的入射颗粒的屏幕，以及被配置为重定向由该源发射的超过紫外线的过滤器， 到传感器。

公开(公告)号：US07706057B2

公开(公告)日：2010-04-27

申请号：US12230384

申请日：2008-08-28

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Levinus Pieter Bakker ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder

IPC分类号： F21V9/04 ,  F21V9/06 ,  G02B5/08 ,  G02B5/20

CPC分类号： G02B1/10 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G02B5/0891 ,  G02B5/283 ,  G03F1/24 ,  G03F7/70575 ,  G03F7/70958 ,  G21K1/062 ,  G21K2201/067

摘要： A multi-layer mirror includes a multi-layer stack. The multi-layer stack includes a plurality of alternating layers with a multi-layer stack top layer and a spectral filter top layer arranged on the multi-layer stack. The spectral filter top layer includes a first spectral purity enhancement layer that includes a first material m1 and has a first layer thickness d1, an intermediate layer that includes a second material m2 and has a second layer thickness d2. The intermediate layer is arranged on the multi-layer stack top layer. The first material is selected from SiN, Si3N4, SiO2, ZnS, Te, diamond, CsI, Se, SiC, amorphous carbon, MgF2, CaF2, TiO2, Ge, PbF2, ZrO2, BaTiO3, LiF or NaF. The second material includes a material different from the first material, and d1+d2 has a thickness between 1.5 and 40 nm.

摘要翻译： 多层反射镜包括多层堆叠。 多层堆叠包括多层交叠层，多层叠层顶层和布置在多层堆叠上的光谱过滤器顶层。 光谱过滤器顶层包括第一光谱纯度增强层，其包括第一材料m1并且具有第一层厚度d1，包括第二材料m2并具有第二层厚度d2的中间层。 中间层布置在多层堆叠顶层上。 第一种材料选自SiN，Si3N4，SiO2，ZnS，Te，金刚石，CsI，Se，SiC，无定形碳，MgF2，CaF2，TiO2，Ge，PbF2，ZrO2，BaTiO3，LiF或NaF。 第二材料包括与第一材料不同的材料，并且d1 + d2具有在1.5和40nm之间的厚度。

公开(公告)号：US07414700B2

公开(公告)日：2008-08-19

申请号：US11239479

申请日：2005-09-30

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Carolus Ida Maria Antonius Spee ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Carolus Ida Maria Antonius Spee ,  Derk Jan Wilfred Klunder

IPC分类号： G03B27/42

CPC分类号： B82Y10/00 ,  B08B7/0035 ,  B08B17/04 ,  G03F7/70925 ,  G03F7/70983 ,  G21K1/062

摘要： A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

公开(公告)号：US07355672B2

公开(公告)日：2008-04-08

申请号：US10956344

申请日：2004-10-04

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Carolus Ida Maria Antonius Spee ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Johannes Hubertus Josephina Moors ,  Carolus Ida Maria Antonius Spee ,  Derk Jan Wilfred Klunder

IPC分类号： G03B27/52 ,  G03B27/42 ,  G03B27/32 ,  C23G1/00 ,  G03C5/00

CPC分类号： B82Y10/00 ,  B08B7/0035 ,  B08B17/04 ,  G03F7/70925 ,  G03F7/70983 ,  G21K1/062

摘要： A method for the removal of a deposition on an optical element of an apparatus including the optical element includes providing an H2 containing gas in at least part of the apparatus includes producing hydrogen radicals from H2 from the H2 containing gas; and bringing the optical element with deposition into contact with at least part of the hydrogen radicals and removing at least part of the deposition. Further, a method for the protection of an optical element of an apparatus including the optical element includes providing a cap layer to the optical element by a deposition process; and during or after use of the apparatus, removing at least part of the cap layer from the optical element in a removal process as described above. The methods can be applied in a lithographic apparatus.

摘要翻译： 在包括光学元件的设备的光学元件上去除沉积的方法包括在至少部分设备中提供含H 2的气体，包括从H 2 来自含H 2气体; 并使具有沉积的光学元件与至少部分氢自由基接触并除去至少部分沉积物。 此外，用于保护包括光学元件的装置的光学元件的方法包括通过沉积工艺向光学元件提供盖层; 并且在使用所述装置期间或之后，如上所述在去除过程中从所述光学元件中去除所述盖层的至少一部分。 该方法可以应用在光刻设备中。

公开(公告)号：US20080074655A1

公开(公告)日：2008-03-27

申请号：US11527731

申请日：2006-09-27

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Wouter Anthon Soer ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Niels Machiel Driessen

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Wouter Anthon Soer ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Niels Machiel Driessen

IPC分类号： G01N21/00

CPC分类号： G03F7/70916 ,  G01N21/15 ,  G03F7/70558

摘要： An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system.

摘要翻译： 公开了一种用于极紫外光刻系统的光学传感器装置。 该装置包括光学传感器，其包括传感器表面和被配置为从传感器表面去除碎屑的移除机构。 因此，可以方便地为光刻系统进行剂量和/或污染测量。

公开(公告)号：US07863591B2

公开(公告)日：2011-01-04

申请号：US12465118

申请日：2009-05-13

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Wouter Anthon Soer ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Niels Machiel Driessen

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Wouter Anthon Soer ,  Johannes Christiaan Leonardus Franken ,  Olav Waldemar Vladimir Frijns ,  Niels Machiel Driessen

IPC分类号： G21K5/00

CPC分类号： G03F7/70916 ,  G01N21/15 ,  G03F7/70558

摘要： An optical sensor apparatus for use in an extreme ultraviolet lithographic system is disclosed. The apparatus includes an optical sensor comprising a sensor surface and a removal mechanism configured to remove debris from the sensor surface. Accordingly, dose and/or contamination measurements may be carried out conveniently for the lithographic system.

摘要翻译： 公开了一种用于极紫外光刻系统的光学传感器装置。 该装置包括光学传感器，其包括传感器表面和被配置为从传感器表面去除碎屑的移除机构。 因此，可以方便地为光刻系统进行剂量和/或污染测量。

公开(公告)号：US07598503B2

公开(公告)日：2009-10-06

申请号：US11451601

申请日：2006-06-13

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Johannes Hubertus Josephina Moors

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Derk Jan Wilfred Klunder ,  Johannes Hubertus Josephina Moors

IPC分类号： G01J3/10 ,  G21K5/10 ,  H05G2/00

CPC分类号： G03F7/70925 ,  B82Y10/00 ,  G03F7/70166 ,  G03F7/70916

摘要： A lithographic apparatus is disclosed. The apparatus includes a source for supplying hydrogen radicals, a guide for use in conjunction with the source, for directing hydrogen radicals to an application surface to be targeted by the hydrogen radicals. The guide is provided with a coating having a hydrogen radical recombination constant of less than 0.2. In this way, the radicals can be transported with reduced losses and are able to better interact with remaining contaminants on application surfaces, such as mirror surfaces.

摘要翻译： 公开了一种光刻设备。 该装置包括用于供应氢自由基的源，与源结合使用的引导件，用于将氢自由基引导到由氢自由基靶向的施加表面。 引导件具有氢自由基复合常数小于0.2的涂层。 以这种方式，可以以较少的损失运输自由基，并且能够更好地与应用表面（例如镜面）上的剩余污染物相互作用。

公开(公告)号：US07736820B2

公开(公告)日：2010-06-15

申请号：US11418465

申请日：2006-05-05

申请人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Koen Van Ingen Schenau ,  Derk Jan Wilfred Klunder

发明人： Maarten Marinus Johannes Wilhelmus Van Herpen ,  Vadim Yevgenyevich Banine ,  Koen Van Ingen Schenau ,  Derk Jan Wilfred Klunder

IPC分类号： G03F1/00

CPC分类号： G03F1/24 ,  B82Y10/00 ,  B82Y40/00 ,  G02B5/0816 ,  G03F7/70575 ,  G21K1/062

摘要： An EUV mask includes, on top of a multi-layer mirror, a spectral purity enhancement layer, for application in an EUV lithographic apparatus. On top of the spectral purity enhancement layer, a patterned absorber layer is provided. The spectral purity enhancement layer includes a first spectral purity enhancement layer, but between the multi-layer mirror and first spectral purity enhancement layer there may be an intermediate layer or a second spectral purity enhancement layer and intermediate layer. The patterned absorber layer may also itself function as an anti-reflection (AR) coating. The AR effect of this absorber layer is a function of the aperture sizes in the pattern. The spectral purity of a mask may be enhanced, such that DUV radiation is diminished relatively stronger than EUV radiation.

摘要翻译： EUV掩模在多层反射镜之上包括光谱纯度增强层，用于EUV光刻设备中。 在光谱纯度增强层的顶部，提供了图案化的吸收层。 光谱纯度增强层包括第一光谱纯度增强层，但是在多层反射镜和第一光谱纯度增强层之间，可以存在中间层或第二光谱纯度增强层和中间层。 图案化的吸收层本身也可以用作抗反射（AR）涂层。 该吸收层的AR效应是图案中孔径尺寸的函数。 可以增强掩模的光谱纯度，使得DUV辐射比EUV辐射相对更强。