Abstract:
An N bit digital-to-analog converter DAC is based on a first stage including a first set of resistors corresponding to higher order bits of the digital input, and a second stage including a second set of resistors corresponding to lower order bits of the digital input. A plurality of pass transistors is arrange to connect a first subset of the first set of resistors in the first stage selected in response to a digital input to a second subset of the second set of resistors in the second stage selected in response to the digital input. A means for reducing variations in a sum of on-resistances RON of the pass transistors in the plurality of pass transistors selected in response to a digital input is provided, resulting in more uniform steps in output voltage of the DAC over a wider range.
Abstract:
A low dropout (LDO) regulating device includes a regulator and a pre-charger. The regulator is configured to adjust an output voltage provided to an output node in accordance with a voltage difference between a first reference voltage and a feedback voltage on a feedback node, wherein the feedback node is coupled to the output node. The pre-charger is electrically connected to the regulator, and is electrically connected to the feedback node for charge sharing.
Abstract:
A voltage driver circuit for an output stage of an operational amplifier, or other circuits, includes a level shifter and an output driver including a source follower and a common source amplifier in a push-pull configuration. The level shifter generates a node voltage as a function of an input voltage on the input node. The output driver including a first transistor having a control terminal receiving the node voltage, and connected between a supply voltage and an output node, and a second transistor having a control terminal receiving the input voltage from the input node, and connected between the output node and a reference voltage, wherein the first and second transistors have a common conductivity type.
Abstract:
A memory device comprises a first NAND string that includes a first plurality of memory cells and a first string select switch arranged in series, the first string select switch disposed between a first bit line and a first end of the first plurality, a second NAND string that includes a second plurality of memory cells and a second string select switch arranged in series, the second string select switch disposed between a second bit line and a first end of the second plurality, word lines coupled to memory cells in the first plurality and memory cells in the second plurality, and a string select line coupled to the first and second string select switches. A method of operating such a memory device comprises applying a voltage varying in a manner complementary to absolute temperature to at least one of the word lines and the string select line.
Abstract:
Counting status circuits are electrically coupled to corresponding status elements. The status elements selectably store a bit status of a bit line coupled to a memory array. The bit status can indicate one of at least pass and fail. The counting status circuits are electrically coupled to each other in a sequential order. Control logic causes processing of the counting status circuits in the sequential order to determine a total of the memory elements that store the bit status. The total number of memory elements that store the bit status indicate the number of error bits or non-error bits, which can help determine whether there are too many errors to be fixed by error correction codes.
Abstract:
Counting status circuits are electrically coupled to corresponding status elements. The status elements selectably store a bit status of a bit line coupled to a memory array. The bit status can indicate one of at least pass and fail. The counting status circuits are electrically coupled to each other in a sequential order. Control logic causes processing of the counting status circuits in the sequential order to determine a total of the memory elements that store the bit status. The total number of memory elements that store the bit status indicate the number of error bits or non-error bits, which can help determine whether there are too many errors to be fixed by error correction codes.