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    NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY
    11.
    发明申请
    NON-UNIFORM SWITCHING BASED NON-VOLATILE MAGNETIC BASED MEMORY 审中-公开
    基于非均匀开关的非易失性磁性存储器

    公开(公告)号：US20120069643A1

    公开(公告)日：2012-03-22

    申请号：US13305677

    申请日：2011-11-28

    Applicant: Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

    IPC: G11C11/00

    CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

    Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

    Abstract translation: 非均匀开关型非易失性磁存储元件包括固定层，形成在固定层顶部上的阻挡层，形成在阻挡层顶部上的第一自由层，形成非均匀开关层（NSL） 在第一自由层的顶部和形成在不均匀开关层的顶部上的第二自由层。 在基本上垂直于固定层，阻挡层，第一自由层，不均匀的开关层和第二自由层的方向上施加开关电流，导致第一自由层，第二自由层和非自由层的状态之间的切换， 均匀的开关层，开关电流大大降低。

    Non-uniform switching based non-volatile magnetic based memory
    13.
    发明授权
    Non-uniform switching based non-volatile magnetic based memory 有权
    基于非均匀开关的非易失性磁性存储器

    公开(公告)号：US08084835B2

    公开(公告)日：2011-12-27

    申请号：US11674124

    申请日：2007-02-12

    Applicant: Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

    Inventor： Rajiv Yadav Ranjan ,  Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

    IPC: H01L29/82 ,  G11C11/00

    CPC classification number: H01L27/228 ,  B82Y10/00 ,  G11C11/161 ,  G11C11/1673 ,  G11C11/1675 ,  H01L43/08

    Abstract: A non-uniform switching based non-volatile magnetic memory element includes a fixed layer, a barrier layer formed on top of the fixed layer, a first free layer formed on top of the barrier layer, a non-uniform switching layer (NSL) formed on top of the first free layer, and a second free layer formed on top of the non-uniform switching layer. Switching current is applied, in a direction that is substantially perpendicular to the fixed layer, barrier layer, first free layer, non-uniform switching layer and the second free layer causing switching between states of the first free layer, second free layer and non-uniform switching layer with substantially reduced switching current.

    Abstract translation: 非均匀开关型非易失性磁存储元件包括固定层，形成在固定层顶部上的阻挡层，形成在阻挡层顶部上的第一自由层，形成非均匀开关层（NSL） 在第一自由层的顶部和形成在不均匀开关层的顶部上的第二自由层。 在基本上垂直于固定层，阻挡层，第一自由层，不均匀的开关层和第二自由层的方向上施加开关电流，导致第一自由层，第二自由层和非自由层的状态之间的切换， 均匀的开关层，开关电流大大降低。

    Precision clock synthesizer using RC oscillator and calibration circuit
    14.
    发明授权
    Precision clock synthesizer using RC oscillator and calibration circuit 有权
    精密时钟合成器采用RC振荡器和校准电路

    公开(公告)号：US06404246B1

    公开(公告)日：2002-06-11

    申请号：US09741971

    申请日：2000-12-20

    Applicant: Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

    Inventor： Petro Estakhri ,  Mahmud Assar ,  Parviz Keshtbod

    IPC: H03L706

    CPC classification number: H03L7/18 ,  H03K3/0231 ,  H03L7/087

    Abstract: A system and method of generating an output signal of very precise frequency without the use of a crystal oscillator. An input signal is generated using any convenient such as an RC oscillator. A circuit for producing a frequency-controlled output signal comprises a phase lock loop having a VCO and a down counter. The down counter reduces the frequency of a VCO clock signal in accordance with a down count value. The down count value is loaded in a register and stored in non-volatile memory. The down count value is set during a calibration operation using a precision external clock signal. In this way, a clock signal with a highly precise frequency is generated without using a crystal oscillator.

    Abstract translation: 一种在不使用晶体振荡器的情况下产生非常精确频率的输出信号的系统和方法。 使用任何方便的RC振荡器产生输入信号。 用于产生频率控制的输出信号的电路包括具有VCO和向下计数器的锁相环。 下降计数器根据递减计数值降低VCO时钟信号的频率。 递减计数值加载到寄存器中并存储在非易失性存储器中。 在使用精密外部时钟信号的校准操作期间设置递减计数值。 以这种方式，在不使用晶体振荡器的情况下产生具有高精度频率的时钟信号。

    Low-cost non-volatile flash-RAM memory
    16.
    发明授权
    Low-cost non-volatile flash-RAM memory 有权
    低成本的非易失性闪存 - RAM内存

    公开(公告)号：US08391058B2

    公开(公告)日：2013-03-05

    申请号：US13345600

    申请日：2012-01-06

    Applicant: Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud Assar

    Inventor： Rajiv Yadav Ranjan ,  Parviz Keshtbod ,  Mahmud Assar

    IPC: G11C11/14

    CPC classification number: G06F12/0246 ,  G11C11/15 ,  G11C11/161 ,  G11C11/1659 ,  G11C11/1675 ,  G11C14/00 ,  H01L27/105 ,  H01L27/224

    Abstract: A flash-RAM memory includes non-volatile random access memory (RAM) formed on a monolithic die and non-volatile page-mode memory formed on top of the non-volatile RAM, the non-volatile page-mode memory and the non-volatile RAM reside on the monolithic die. The non-volatile RAM is formed of stacks of magnetic memory cells arranged in three-dimensional form for higher density and lower costs.

    Abstract translation: 闪存RAM存储器包括形成在单片模块上的非易失性随机存取存储器（RAM）和形成在非易失性RAM，非易失性页面模式存储器和非易失性页面模式存储器之上的非易失性页面模式存储器， 易失性RAM驻留在单片模具上。 非易失性RAM由以三维形式布置的磁存储单元堆叠形成，用于更高密度和更低成本。

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