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    Process for implementing oxygen into a silicon wafer having a region which is free of agglomerated intrinsic point defects
    11.
    发明申请
    Process for implementing oxygen into a silicon wafer having a region which is free of agglomerated intrinsic point defects 审中-公开
    将氧气实施到具有没有附聚本征点缺陷的区域的硅晶片中的方法

    公开(公告)号：US20050130394A1

    公开(公告)日：2005-06-16

    申请号：US10963137

    申请日：2004-10-12

    申请人： Robert Falster

    发明人： Robert Falster

    IPC分类号： C30B15/00 ,  H01L21/02 ,  H01L21/322 ,  H01L21/762 ,  H01L27/12 ,  H01L21/66 ,  H01L21/20 ,  H01L21/76

    CPC分类号： C30B15/203 ,  C30B15/206 ,  C30B29/06 ,  H01L21/3225 ,  H01L21/3226 ,  H01L21/7624 ,  H01L21/76251 ,  Y10S257/913 ,  Y10T428/21

    摘要： The present invention relates to a process for the preparation of a silicon on insulator wafer. The process includes implanting oxygen into a single crystal silicon wafer which is substantially free of agglomerated vacancy-type defects. The present invention further relates to a process for the preparation of a silicon on insulator wafer wherein oxygen is implanted into a single crystal silicon wafer having an axially symmetric region in which there is a predominant intrinsic point defect which is substantially free of agglomerated intrinsic point defects. Additionally, the present invention relates to a silicon on insulator (“SOI”) structure in which the device layer is substantially free of agglomerated intrinsic point defects.

    摘要翻译： 本发明涉及一种制备绝缘体上硅晶片的方法。 该方法包括将氧气注入到基本上没有附聚空位型缺陷的单晶硅晶片中。 本发明还涉及一种用于制备绝缘体上硅晶片的方法，其中将氧注入到具有轴向对称区域的单晶硅晶片中，其中存在基本上没有附聚固有点缺陷的主要固有点缺陷 。 另外，本发明涉及绝缘体上硅（“SOI”）结构，其中器件层基本上没有聚集的固有点缺陷。

    Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices
    12.
    发明申请
    Process for making non-uniform minority carrier lifetime distribution in high performance silicon power devices 有权
    在高性能硅功率器件中制造不均匀少数载流子寿命分布的方法

    公开(公告)号：US20050006796A1

    公开(公告)日：2005-01-13

    申请号：US10911965

    申请日：2004-08-05

    申请人： Robert Falster

    发明人： Robert Falster

    IPC分类号： H01L21/22 ,  H01L21/322 ,  H01L29/167 ,  H01L29/32 ,  H01L23/58

    CPC分类号： H01L21/3225 ,  H01L21/221 ,  H01L21/3221 ,  H01L29/167 ,  H01L29/32 ,  Y10S257/913

    摘要： A process for heat-treating a single crystal silicon segment to influence the profile of minority carrier recombination centers in the segment. The segment has a front surface, a back surface, and a central plane between the front and back surfaces. In the process, the segment is subjected to a heat-treatment to form crystal lattice vacancies, the vacancies being formed in the bulk of the silicon. The segment is then cooled from the temperature of said heat treatment at a rate which allows some, but not all, of the crystal lattice vacancies to diffuse to the front surface to produce a segment having a vacancy concentration profile in which the peak density is at or near the central plane with the concentration generally decreasing in the direction of the front surface of the segment. Platinum atoms are then in-diffused into the silicon matrix such that the resulting platinum concentration profile is substantially related to the concentration profile of the crystal lattice vacancies.

    摘要翻译： 一种用于热处理单晶硅片段以影响片段中少数载流子复合中心轮廓的方法。 该段具有前表面，后表面和前表面和后表面之间的中心平面。 在该过程中，对该段进行热处理以形成晶格空位，该空位在大部分硅中形成。 然后将该段从所述热处理的温度以允许一些但不是全部晶格空位扩散到前表面的速率冷却，以产生具有空位浓度分布的区段，其中峰密度在 或靠近中心平面，其浓度通常在片段前表面的方向上减小。 铂原子然后扩散到硅基质中，使得所得的铂浓度分布基本上与晶格空位的浓度分布有关。

    Method for the production of low defect density silicon
    13.
    发明申请
    Method for the production of low defect density silicon 失效
    生产低缺陷密度硅的方法

    公开(公告)号：US20050132948A1

    公开(公告)日：2005-06-23

    申请号：US11058885

    申请日：2005-02-16

    申请人： Vladimir Vornokov ,  Robert Falster ,  Mohsen Banan

    发明人： Vladimir Vornokov ,  Robert Falster ,  Mohsen Banan

    IPC分类号： A61K31/427 ,  A61K31/513 ,  A61K31/675 ,  A61K31/7008 ,  A61K31/704 ,  C30B15/00 ,  C30B21/06 ,  C30B27/02 ,  C30B28/10 ,  C30B30/04

    CPC分类号： C30B29/06 ,  A61K31/427 ,  A61K31/513 ,  A61K31/675 ,  A61K31/7008 ,  A61K31/704 ,  C30B15/203 ,  C30B15/206

    摘要： A process for the preparation of a silicon single ingot in accordance with the Czochralski method. The process for growing the single crystal silicon ingot comprises controlling (i) a growth velocity, v, (ii) an average axial temperature gradient, G0, during the growth of a constant diameter portion of the crystal over a temperature range from solidification to a temperature of no less than about 1325° C. to initially produce in the constant diameter portion of the ingot a series of predominant intrinsic point defects including vacancy dominated regions and silicon self interstitial dominated regions, alternating along the axis, and cooling the regions from the temperature of solidification at a rate which allows silicon self-interstitial atoms to diffuse radially to the lateral surface and to diffuse axially to vacancy dominated regions to reduce the concentration intrinsic point defects in each region.

    摘要翻译： 根据Czochralski法制备硅单锭的方法。 用于生长单晶硅锭的方法包括在晶体的恒定直径部分的生长期间控制（i）生长速度v，（ii）平均轴向温度梯度G <0> 在从固化到不低于约1325℃的温度的温度范围内，以最初在锭的恒定直径部分中产生一系列主要的固有点缺陷，包括空位主导区域和硅自填隙主导区域，沿着 并且以允许硅自间隙原子径向扩散到侧表面并且轴向扩散到空位主导区域的速率从固化温度冷却区域，以减少每个区域中的固有点缺陷的浓度。

    Precision controlled precipitation of oxygen in silicon
    14.
    发明授权
    Precision controlled precipitation of oxygen in silicon 失效
    精密控制硅中的氧沉淀

    公开(公告)号：US5593494A

    公开(公告)日：1997-01-14

    申请号：US403301

    申请日：1995-03-14

    申请人： Robert Falster

    发明人： Robert Falster

    IPC分类号： C30B29/06 ,  C30B33/00 ,  C30B33/02 ,  H01L21/322 ,  C30B1/02

    CPC分类号： C30B29/06 ,  C30B33/00 ,  H01L21/3225

    摘要： Process for controlling the density of oxygen precipitate nucleation centers in single crystal silicon. In the process, the single crystal silicon is annealed at a temperature of at least about 350.degree. C. to cause the formation of oxygen precipitate nucleation centers in the single crystal silicon. During the annealing step, the single crystal silicon is heated (or cooled) to achieve a first temperature, T.sub.1, which is between about 350.degree. C. and about 500.degree. C. The temperature is then increased from T.sub.1 to a second temperature, T.sub.2, which is between about 500.degree. C. and about 750.degree. C. with the average rate of temperature increase from T.sub.1 to T.sub.2 being less than about 25.degree. C. per minute. The annealing is terminated at a point in time when the oxygen precipitate nucleation centers are capable of being dissolved by heat-treating the silicon at a temperature not in excess of about 1150.degree. C.

    摘要翻译： 用于控制单晶硅中氧沉淀成核中心密度的方法。 在该过程中，单晶硅在至少约350℃的温度下进行退火，以在单晶硅中形成氧沉淀成核心。 在退火步骤期间，将单晶硅加热（或冷却）以达到约350℃至约500℃之间的第一温度T1，然后将温度从T1升高至第二温度，T2 ，其温度在约500℃至约750℃之间，平均升温速度T1至T2小于约25℃/分钟。 在通过在不超过约1150℃的温度下热处理硅来使氧沉淀成核中心能够溶解的时间点终止退火。

    Process for contamination removal and minority carrier lifetime improvement in silicon
    15.
    发明授权
    Process for contamination removal and minority carrier lifetime improvement in silicon 失效
    污染物去除和少数载流子寿命改善的工艺

    公开(公告)号：US5272119A

    公开(公告)日：1993-12-21

    申请号：US971056

    申请日：1992-11-03

    申请人： Robert Falster

    发明人： Robert Falster

    IPC分类号： H01L21/322 ,  H01L21/324

    CPC分类号： H01L21/3221 ,  Y10S148/024

    摘要： A process for increasing the minority carrier recombination lifetime in a silicon body contaminated with transition metals, expecially iron. The silicon body is stored at a temperature and for a period sufficient to cause metal to diffuse from the bulk of the silicon body to the surface of the silicon body to measurably increase the minority carrier recombination lifetime.

    摘要翻译： 在过渡金属，特别是铁污染的硅体中增加少数载流子复合寿命的方法。 硅体在足以使金属从硅体的体积扩散到硅体的表面的温度和时间内被储存，以可测量地增加少数载流子复合寿命。

    Process for producing silicon on insulator structure having intrinsic gettering by ion implantation
    18.
    发明申请
    Process for producing silicon on insulator structure having intrinsic gettering by ion implantation 失效
    通过离子注入产生具有固有吸气性的绝缘体上硅结构的方法

    公开(公告)号：US20050255671A1

    公开(公告)日：2005-11-17

    申请号：US11174908

    申请日：2005-07-05

    申请人： Robert Falster ,  Jeffrey Libbert

    发明人： Robert Falster ,  Jeffrey Libbert

    IPC分类号： H01L21/02 ,  H01L21/322 ,  H01L21/76 ,  H01L21/762 ,  H01L27/12 ,  H01L21/30

    CPC分类号： H01L21/3226 ,  H01L21/76243

    摘要： The present invention is directed to a process for producing a silicon on insulator (SOI) structure having intrinsic gettering, wherein a silicon substrate is subjected to an ideal precipitating wafer heat treatment which enables the substrate, during the heat treatment cycles of essentially any arbitrary electronic device manufacturing process to form an ideal, non-uniform depth distribution of oxygen precipitates, and wherein a dielectric layer is formed beneath the surface of the wafer by implanting oxygen or nitrogen ions, or molecular oxygen, beneath the surface and annealing the wafer. Additionally, the silicon wafer may initially include an epitaxial layer, or an epitaxial layer may be deposited on the substrate during the process of the present invention.

    摘要翻译： 本发明涉及一种制造具有固有吸气性的绝缘体上硅（SOI）结构的方法，其中硅衬底经受理想的沉淀晶片热处理，其使基板在基本上任意任意的电子 以形成氧沉淀物的理想的，不均匀的深度分布，并且其中通过在表面下方注入氧或氮离子或分子氧并且退火晶片，在晶片的表面下方形成电介质层。 另外，硅晶片可以最初包括外延层，或者在本发明的工艺期间，可以在衬底上沉积外延层。

    Silicon wafers having controlled precipitation distribution
    20.
    发明授权
    Silicon wafers having controlled precipitation distribution 失效
    具有受控沉淀分布的硅晶片

    公开(公告)号：US5403406A

    公开(公告)日：1995-04-04

    申请号：US64013

    申请日：1993-05-13

    申请人： Robert Falster ,  Giancarlo Ferrero ,  Graham Fisher ,  Massimiliano Olmo ,  Marco Pagani

    发明人： Robert Falster ,  Giancarlo Ferrero ,  Graham Fisher ,  Massimiliano Olmo ,  Marco Pagani

    IPC分类号： C30B33/02 ,  H01L21/02 ,  H01L21/26 ,  H01L21/322 ,  H01L21/324

    CPC分类号： H01L21/3225

    摘要： A silicon wafer containing oxygen precipitate nucleation centers (or oxygen precipitates) and having a first face, a second face, and a central plane equidistant between the first and second faces. The nucleation centers (or oxygen precipitates) have a non-uniform distribution between the first and second faces with a maximum density of the nucleation centers (or oxygen precipitates) being in a region which is between the first face and the central plane and nearer to the first face than the central plane. The density of the nucleation centers (or oxygen precipitates) increases from the first face to the region of maximum density and decreasing from the region of maximum density to the central plane.

    摘要翻译： PCT No.PCT / IT91 / 00095 Sec。 371日期：1993年5月13日 102（e）日期1993年5月13日PCT 1991年11月11日PCT公布。 第WO92 / 09101号公报 日期：1992年5月29日。一种含有氧沉淀成核中心（或氧沉淀物）并且具有在第一和第二面之间等距离的第一面，第二面和中心平面的硅晶片。 成核中心（或氧沉淀物）在第一和第二面之间具有不均匀的分布，成核中心（或氧沉淀物）的最大密度在第一面和中心平面之间的区域中，并且更接近 第一面比中央飞机。 成核中心（或氧沉淀物）的密度从第一面增加到最大密度的区域，并从最大密度的区域减小到中心平面。