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    Heat conductive colored aluminum nitride sintered body and method of preparing the same
    11.
    发明授权
    Heat conductive colored aluminum nitride sintered body and method of preparing the same 失效
    导热色氮化铝烧结体及其制备方法

    公开(公告)号：US5294388A

    公开(公告)日：1994-03-15

    申请号：US922682

    申请日：1992-07-29

    申请人： Kouhei Shimoda ,  Takao Maeda ,  Kouichi Sogahe ,  Masaya Miyake

    发明人： Kouhei Shimoda ,  Takao Maeda ,  Kouichi Sogahe ,  Masaya Miyake

    IPC分类号： C04B35/581 ,  H01L21/48 ,  F27B9/04 ,  C04B35/58

    CPC分类号： C04B35/581 ,  H01L21/4807

    摘要： A heat conductive aluminum nitride sintered body contains 100 parts by weight of aluminum nitride, at least 0.005 parts by weight and not more than 0.5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of a rare earth aluminum oxide in terms of the simple substance of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of at least one element selected from a group of compounds containing elements belonging to the groups IVB, VB and VIB of the periodic table in terms of the simple substance of the element. Heat conductivity of the aluminum nitride sintered body is at least 100 W/m.multidot.K and not more than 270 W/m.multidot.K at the ordinary temperature. According to a method of preparing such an aluminum nitride sintered body, at least 0.01 parts by weight and not more than 5 parts by weight of carbon, at least 0.01 parts by weight and not more than 15 parts by weight of an oxide of a rare earth element, and at least 0.01 parts by weight and not more than 15 parts by weight of an oxide, a carbide or a nitride of an element belonging to the group IVB, VB or VIB of the periodic table are added to 100 parts by weight of aluminum nitride. A compact of this mixture is fired in a nonoxidizing atmosphere under a temperature of at least 1500.degree. C. and not more than 2100.degree. C.

    摘要翻译： 导热氮化铝烧结体含有100重量份的氮化铝，至少0.005重量份，不超过0.5重量份的碳，至少0.01重量份，不超过15重量份的稀有金属 以稀土元素的单质为基准的至少0.01重量份至少15重量份的选自包含属于IVB族，VB族的元素的化合物的族中的至少一种元素 和元素周期表的VIB。 氮化铝烧结体的导热率在常温下为至少100W / m×K且不大于270W / m×K。 根据制备这种氮化铝烧结体的方法，至少0.01重量份且不超过5重量份的碳，至少0.01重量份且不超过15重量份的稀有氧化物 并且将至少0.01重量份且不超过15重量份的元素周期表中IVB族，VB族或VIB族元素的氧化物，碳化物或氮化物加入到100重量份 的氮化铝。 将该混合物的压块在至少1500℃且不超过2100℃的温度下在非氧化气氛中焙烧。

    Silicon nitride sintered body and process for producing the same
    13.
    发明授权
    Silicon nitride sintered body and process for producing the same 失效
    氮化硅烧结体及其制造方法

    公开(公告)号：US5275772A

    公开(公告)日：1994-01-04

    申请号：US957506

    申请日：1992-10-05

    申请人： Takehisa Yamamoto ,  Takao Nishioka ,  Kenji Matsunuma ,  Akira Yamakawa ,  Masaya Miyake

    发明人： Takehisa Yamamoto ,  Takao Nishioka ,  Kenji Matsunuma ,  Akira Yamakawa ,  Masaya Miyake

    IPC分类号： C04B35/593 ,  C04B35/597 ,  C04B35/58

    CPC分类号： C04B35/5935 ,  C04B35/597

    摘要： The present invention relates to a silicon nitride sintered body [wherein the composition of Si.sub.3 N.sub.4 -first aid (Y.sub.2 O.sub.3 +MgO)-second aid (at least one of Al.sub.2 O.sub.3 and AlN)] falls within a range defined by lines joining points A, B, C and D in FIG. 1, the crystal phase of the sintered body contains both .alpha.-Si.sub.3 N.sub.4 and .beta.'-sialon, and the relative density is 98% or more. This sintered body is produced by subjecting a green compact of the above-described source to primary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 96% or more, and the precipitation ratio of the .alpha.-Si.sub.3 N.sub.4 crystal phases to the .beta.'-sialon crystal phase in the sintered body is in the range of from 40:60 to 80:20; and then subjecting the primary sintered body to secondary sintering in a nitrogen gas atmosphere at 1300 to 1700.degree. C. so that the relative density reaches 98% or more. The sintered body has superior strength properties, especially at ordinary temperatures, and can be produced with a high productivity in a high yield at a low cost.

    摘要翻译： 本发明涉及一种氮化硅烧结体[其中，Si 3 N 4 - 急救（Y 2 O 3 + MgO） - 辅助剂（Al 2 O 3和AlN中的至少一种）的组成]落在由连接点A，B， C和D。 如图1所示，烧结体的结晶相含有α-Si 3 N 4和β'-Sialon，相对密度为98％以上。 该烧结体是通过使上述源的生坯在1300〜1700℃的氮气气氛中进行一次烧结而制成的，使得相对密度达到96％以上， Si3N4晶相与烧结体中的β' - 赛隆结晶相的比例范围为40:60至80:20; 然后在1300〜1700℃的氮气气氛中使一次烧结体进行二次烧结，使得相对密度达到98％以上。 该烧结体具有优异的强度特性，特别是在普通温度下，可以低成本高产率地以高生产率生产。

    Method of manufacturing a ceramics-type vacuum vessel
    15.
    发明授权
    Method of manufacturing a ceramics-type vacuum vessel 失效
    制造陶瓷型真空容器的方法

    公开(公告)号：US5603788A

    公开(公告)日：1997-02-18

    申请号：US457013

    申请日：1995-06-01

    申请人： Tetsuya Abe ,  Yoshio Murakami ,  Hisao Takeuchi ,  Akira Yamakawa ,  Masaya Miyake

    发明人： Tetsuya Abe ,  Yoshio Murakami ,  Hisao Takeuchi ,  Akira Yamakawa ,  Masaya Miyake

    IPC分类号： C04B37/00 ,  F16J12/00 ,  H05H7/14 ,  B32B31/12 ,  B32B31/26

    CPC分类号： H05H7/14

    摘要： A vacuum vessel is provided in which the majority of a vessel wall including an annular wall portion (1) and a plate-wall portion (2) is formed of ceramic material such as silicon nitride, for example. To bond the plural wall members together, bonding faces having a surface flatness of not more than 1 .mu.m are prepared thereon, and then a ceramic powder bonding substance with an average particle diameter of not more than 1 .mu.m is interposed between adjacent bonding faces and subjected to heating. Because the generation of gas, such as hydrogen, from the wall of the ceramic vessel is reduced, extremely high vacuum can be generated and maintained in the interior of the vacuum vessel. Also, because the wall of the vacuum vessel has a high permeability with respect to a magnetic field and an electric field, the vacuum vessel can be used as a vessel in a particle accelerator that allows the high precision control of charged particles therein by means of an electromagnetic field.

    摘要翻译： 提供一种真空容器，其中包括环形壁部分（1）和板壁部分（2）的容器壁的大部分由诸如氮化硅的陶瓷材料形成。 为了将多个壁构件结合在一起，在其上制备具有不大于1μm的表面平坦度的接合面，然后将平均粒径不大于1μm的陶瓷粉末粘合物置于相邻的接合面 并进行加热。 因为从陶瓷容器的壁产生气体，例如氢气，所以可以在真空容器的内部产生极高的真空度并维持真空。 此外，由于真空容器的壁相对于磁场和电场具有高磁导率，所以真空容器可以用作粒子加速器中的容器，其允许通过以下方式对带电粒子进行高精度控制： 电磁场。

    Aluminum nitride sintered body and process for producing the same
    16.
    发明授权
    Aluminum nitride sintered body and process for producing the same 失效
    氮化铝烧结体及其制造方法

    公开(公告)号：US5273700A

    公开(公告)日：1993-12-28

    申请号：US838800

    申请日：1992-03-16

    申请人： Akira Yamakawa ,  Kouiti Sogabe ,  Kohei Shimoda ,  Masaya Miyake

    发明人： Akira Yamakawa ,  Kouiti Sogabe ,  Kohei Shimoda ,  Masaya Miyake

    IPC分类号： C04B35/581 ,  C04B35/58

    CPC分类号： C04B35/581

    摘要： An aluminum nitride sintered body characterized by comprising aluminum nitride as the main component, containing a titanium compound, and having a black color, a transmittance of 10% or less with the light having a wavelength in the range of from 500 to 650 nm and a heat conductivity of 120 W/m.multidot.K or more. The sintered body is produced by adding 0.05 to 5% by weight, in terms of Ti, of a titanium compound and a sintering aid compound and, if necessary, a compound capable of forming carbon after being thermally decomposed to an aluminum nitride powder, molding the mixture, heating the molding in vacuo, air or a nitrogen gas, a hydrogen gas or an atmosphere comprising a mixture of these gases until the residual carbon content is reduced to 2.0% by weight or less, and sintering the heat-treated mixture in a nonoxidizing atmosphere containing nitrogen at 1600.degree. C. or above. The titanium compound is Ti.sub.n O.sub.2n-1 or a solid solution comprising Ti.sub.n O.sub.2n-1 and nitrogen partly dissolved therein in the solid solution form wherein n is 1 or more, or a compound represented by the formula TiN.sub.x O.sub. y wherein 0

    Sintered body of aluminum nitride
    17.
    发明授权
    Sintered body of aluminum nitride 失效
    氮化铝烧结体

    公开(公告)号：US5264388A

    公开(公告)日：1993-11-23

    申请号：US824746

    申请日：1992-01-17

    申请人： Akira Yamakawa ,  Masaya Miyake ,  Hitoyuki Sakanoue ,  Koichi Sogabe

    发明人： Akira Yamakawa ,  Masaya Miyake ,  Hitoyuki Sakanoue ,  Koichi Sogabe

    IPC分类号： C04B35/581 ,  H01L23/15 ,  H05K1/03 ,  C04B35/58

    CPC分类号： C04B35/581 ,  H01L23/15 ,  H01L2924/0002 ,  H05K1/0306 ,  Y10S428/901

    摘要： The present invention provides a sintered body of aluminum nitride comprising (i) aluminum nitride as a main component and (ii) at least one component selected from the group consisting of Zr, Hf, V, Nb, Ta, Cr, Mo, W, Fe, Co, Ni, Nd, Ho, Ti, and compounds thereof in the total amounts of not greater than 1.0 wt. % and not less than 0.01 wt. % in terms of elements on the basis of sintered body, the sintered body being colored and having a thermal conductivity of at least 150 W/mK. The sintered body is useful for the preparation of circuit boards having printed circuits thereon and highly heat-releasing ceramic packages for semiconductive devices.

    摘要翻译： 本发明提供一种氮化铝烧结体，其包含（i）氮化铝作为主要成分，和（ii）选自Zr，Hf，V，Nb，Ta，Cr，Mo，W， Fe，Co，Ni，Nd，Ho，Ti及其化合物的总量不大于1.0wt。 ％且不小于0.01wt。 基于烧结体的元素的％，烧结体着色并具有至少150W / mK的导热率。 该烧结体可用于制备其上具有印刷电路的电路板和用于半导体器件的高度散热的陶瓷封装。

    Process for production of sintered silicon nitride made article
    18.
    发明授权
    Process for production of sintered silicon nitride made article 失效
    制造烧结氮化硅制品的方法

    公开(公告)号：US5225127A

    公开(公告)日：1993-07-06

    申请号：US829571

    申请日：1992-02-03

    申请人： Takao Nishioka ,  Yoshishige Takano ,  Kenji Matsunuma ,  Matsuo Higuchi ,  Masaya Miyake

    发明人： Takao Nishioka ,  Yoshishige Takano ,  Kenji Matsunuma ,  Matsuo Higuchi ,  Masaya Miyake

    IPC分类号： C04B35/593

    CPC分类号： C04B35/5935

    摘要： There is provided a process for the production of a sintered article which comprises steps ofshaping a raw material powder comprising silicon nitride,thermally treating a shaped article in a non-oxidizing atmosphere at a temperature of 1300.degree. to 1650.degree. C. for at least 2 hours to form .beta.-silicon nitride of not less than 85% calculated from X-ray diffraction patterns and to increase a relative density of the article to not less than 80%, preferably to 80 to 85 %, andsintering the thermally treated article at a temperature of 1700.degree. to 2000.degree. C.

    摘要翻译： 提供了一种生产烧结制品的方法，该方法包括以下步骤：使含有氮化硅的原料粉末成形，在1300℃至1650℃的温度下在非氧化性气氛中对成形制品进行热处理，至少 2小时以形成由X射线衍射图计算的不小于85％的β-氮化硅，并将制品的相对密度提高至不小于80％，优选至80至85％，并将热处理物品 在1700〜2000℃的温度下

    Quadrupole electrode and process for producing the same
    20.
    发明授权
    Quadrupole electrode and process for producing the same 失效
    四极电极及其制造方法

    公开(公告)号：US5373157A

    公开(公告)日：1994-12-13

    申请号：US965258

    申请日：1993-01-05

    申请人： Seiji Hiroki ,  Tetsuya Abe ,  Yoshio Murakami ,  Yoshishige Takano ,  Akira Yamakawa ,  Masaya Miyake

    发明人： Seiji Hiroki ,  Tetsuya Abe ,  Yoshio Murakami ,  Yoshishige Takano ,  Akira Yamakawa ,  Masaya Miyake

    IPC分类号： H01J49/42 ,  H01J1/88

    CPC分类号： H01J49/4215 ,  H01J49/068

    摘要： The present invention relates to improvement of a quadrupole electrode for use in a mass spectrometer or the like, in which two pairs of electrode rods 1, 2, 3 and 4 formed in such a manner that the section of the opposed face of each rod is hyperbolic or circular, and each electrode rod is made of a ceramic and the surface of the electrode is coated with a coating layer 5 of a conductive metal. Further, the present invention relates to a production process, characterized by incorporating such four electrodes at predetermined intervals. Since the electrodes are mainly made of a ceramic which is easily formable with a high dimensional accuracy, the adjustment of the positional relationship between the electrodes during assembling can be made without much effort, which enables a quadrupole electrode having a high performance to be provided with a good reproducibility at a low cost.

    摘要翻译： PCT No.PCT / JP92 / 01141 Sec。 371日期：1993年1月5日 102（e）日期1993年1月5日PCT提交1992年9月7日PCT公布。 出版物WO93 / 05532 日本1993年3月18日。本发明涉及用于质谱仪等的四极电极的改进，其中两对电极棒1,2,3和4以这样的方式形成： 每个杆的相对面是双曲线或圆形，并且每个电极棒由陶瓷制成，并且电极的表面涂覆有导电金属的涂层5。 此外，本发明涉及一种制造方法，其特征在于以预定间隔并入这四个电极。 由于电极主要由能够以高尺寸精度容易地形成的陶瓷制成，因此可以在组装期间电极之间的位置关系的调整不需要太多的努力，这使得能够提供具有高性能的四极电极 以低成本实现良好的再现性。