公开(公告)号：US08009345B2

公开(公告)日：2011-08-30

申请号：US12962750

申请日：2010-12-08

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

IPC分类号： G02F1/01

CPC分类号： B23K26/066

摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.

摘要翻译： 结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。 结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。 光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或 下面。

公开(公告)号：US20060027162A1

公开(公告)日：2006-02-09

申请号：US11098647

申请日：2005-04-05

申请人： Tomoya Kato ,  Masakiyo Matsumura ,  Yukio Taniguchi

发明人： Tomoya Kato ,  Masakiyo Matsumura ,  Yukio Taniguchi

IPC分类号： C30B23/00 ,  C30B25/00 ,  C30B28/12 ,  C30B28/14

CPC分类号： C30B1/00 ,  C30B13/24 ,  Y10T117/1004

摘要： A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.

摘要翻译： 本发明的结晶装置用具有预定的光强度分布的光通量照射非单晶半导体膜，使薄膜结晶化，并且包括相位调制装置，该相位调制装置包括在一定时间内排列的多个单位区域 并且相互具有基本相同的图案，以及设置在相位调制装置和非单晶半导体膜之间的光学图像形成系统。 相位调制装置的单位面积具有一定的相位的基准面，设置在各单位面积的中心附近的第一区域，相对于基准面具有第一相位差，第二区域设置在 第一区域的附近并且具有与第一相位差相对于基准面大致相同的相位差。

公开(公告)号：US20080230725A1

公开(公告)日：2008-09-25

申请号：US12051213

申请日：2008-03-19

申请人： Yukio TANIGUCHI ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

发明人： Yukio TANIGUCHI ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

IPC分类号： H01L21/268 ,  H01J37/22

CPC分类号： B23K26/066

摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.

摘要翻译： 结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。 结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。 光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线基本上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或 下面。

公开(公告)号：US20110075237A1

公开(公告)日：2011-03-31

申请号：US12962750

申请日：2010-12-08

申请人： Yukio TANIGUCHI ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

发明人： Yukio TANIGUCHI ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

IPC分类号： G02F1/01

CPC分类号： B23K26/066

摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.

摘要翻译： 结晶装置包括光调制元件和形成光学系统，其形成基于在照射表面上透过光调制元件的光的光强度分布。 结晶装置用具有光强度分布的光照射非单晶半导体膜以产生结晶半导体膜。 光强度的至少一个等距线的曲率半径沿着照射面上的光强度分布中的强度线实质上变化，并且至少部分等距线的曲率半径具有0.3μm的最小值或 下面。

公开(公告)号：US07897946B2

公开(公告)日：2011-03-01

申请号：US12051213

申请日：2008-03-19

申请人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

发明人： Yukio Taniguchi ,  Masakiyo Matsumura ,  Kazufumi Azuma ,  Tomoya Kato ,  Takahiko Endo

IPC分类号： A61N5/00

CPC分类号： B23K26/066

摘要： A crystallization apparatus includes a light modulation element, and an image forming optical system that forms a light intensity distribution set based on light transmitted through the light modulation element on an irradiation surface. The crystallization apparatus irradiates a non-single crystal semiconductor film with light having the light intensity distribution to generate a crystallized semiconductor film. A curvature radius of at least one isointensity line of a light intensity substantially varies along the isointensity line in the light intensity distribution on the irradiation surface, and a curvature radius of at least a part of the isointensity line has a minimum value of 0.3 μm or below.

公开(公告)号：US07347897B2

公开(公告)日：2008-03-25

申请号：US11098647

申请日：2005-04-05

申请人： Tomoya Kato ,  Masakiyo Matsumura ,  Yukio Taniguchi

发明人： Tomoya Kato ,  Masakiyo Matsumura ,  Yukio Taniguchi

IPC分类号： C30B35/00

CPC分类号： C30B1/00 ,  C30B13/24 ,  Y10T117/1004

摘要： A crystallization apparatus of the present invention irradiates a non-single-crystal semiconductor film with a luminous flux having a predetermined light intensity distribution to crystallize the film, and comprises a phase modulation device comprising a plurality of unit areas which are arranged in a certain period and which mutually have substantially the same pattern, and an optical image forming system disposed between the phase modulation device and the non-single-crystal semiconductor film. The unit area of the phase modulation device has a reference face having a certain phase, a first area disposed in the vicinity of a center of each unit area and having a first phase difference with respect to the reference face, and a second area disposed in the vicinity of the first area and having substantially the same phase difference as that of the first phase difference with respect to the reference face.

摘要翻译： 本发明的结晶装置用具有预定的光强度分布的光通量照射非单晶半导体膜，使薄膜结晶化，并且包括相位调制装置，该相位调制装置包括在一定时间内排列的多个单位区域 并且相互具有基本相同的图案，以及设置在相位调制装置和非单晶半导体膜之间的光学图像形成系统。 相位调制装置的单位面积具有一定的相位的基准面，设置在各单位面积的中心附近的第一区域，相对于基准面具有第一相位差，第二区域设置在 第一区域的附近并且具有与第一相位差相对于基准面大致相同的相位差。

公开(公告)号：US07335910B2

公开(公告)日：2008-02-26

申请号：US11432387

申请日：2006-05-12

申请人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

发明人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

IPC分类号： H01L29/04 ,  H01L29/10 ,  H01L31/036 ,  H01L31/0376 ,  H01L29/00

CPC分类号： H01L29/78621 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.

摘要翻译： 本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。 用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。 因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。 形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。

公开(公告)号：US08168979B2

公开(公告)日：2012-05-01

申请号：US12467852

申请日：2009-05-18

申请人： Tomoya Kato ,  Masakiyo Matsumura

发明人： Tomoya Kato ,  Masakiyo Matsumura

IPC分类号： H01L29/10 ,  H01L29/76 ,  H01L31/036 ,  H01L31/112

CPC分类号： H01L21/02675 ,  H01L21/02609 ,  H01L21/2026 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/04 ,  H01L29/66765 ,  H01L29/78678 ,  H01L29/78696

摘要： According to a crystallization method, in the crystallization by irradiating a non-single semiconductor thin film of 40 to 100 nm provided on an insulation substrate with a laser light, a light intensity distribution having an inverse peak pattern is formed on the surface of the substrate, a light intensity gradient of the light intensity distribution is controlled, a crystal grain array is formed in which each crystal grain is aligned having a longer shape in a crystal growth direction than in a width direction and having a preferential crystal orientation (100) in a grain length direction, and a TFT is formed in which a source region and a drain region are formed so that current flows across a plurality of crystal grains of the crystal grain array in the crystal growth direction.

摘要翻译： 根据结晶化方法，在通过用激光照射设置在绝缘基板上的40〜100nm的非单一半导体薄膜的结晶化中，在基板的表面上形成具有逆峰图案的光强度分布 控制光强分布的光强度梯度，形成晶体晶格阵列，其中每个晶粒在晶体生长方向上比在宽度方向上具有更长的形状，并且具有优选的晶体取向（100） 形成晶粒长度方向，并且形成TFT，其中形成源区和漏区，使得电流在晶粒生长方向上流过晶粒阵列的多个晶粒。

公开(公告)号：US20090004763A1

公开(公告)日：2009-01-01

申请号：US12145826

申请日：2008-06-25

申请人： Takashi Ono ,  Masakiyo Matsumura ,  Kazurumi Azuma ,  Tomoya Kato

发明人： Takashi Ono ,  Masakiyo Matsumura ,  Kazurumi Azuma ,  Tomoya Kato

IPC分类号： H01L21/00 ,  B05C11/00

CPC分类号： G01B11/06 ,  B23K26/048 ,  H01L21/02678 ,  H01L21/02686

摘要： The present invention discloses a laser crystallization method and crystallization apparatus using a high-accuracy substrate height control mechanism. There is provided a laser crystallization method includes obtaining a first pulse laser beam having an inverse-peak-pattern light intensity distribution formed by a phase shifter, and irradiating a thin film disposed on a substrate with the first pulse laser beam, thereby melting and crystallizing the thin film, the method includes selecting a desired one of reflected light components of a second laser beam by using a polarizing element disposed on an optical path of the second laser beam when illuminating, with the second laser beam, an first pulse laser beam irradiation position of the thin film, correcting a height of the substrate to a predetermined height by detecting the selected reflected light component, and irradiating the first pulse laser beam to the thin film having the corrected height.

摘要翻译： 本发明公开了一种使用高精度基板高度控制机构的激光结晶方法和结晶装置。 提供了一种激光结晶方法，包括获得具有由移相器形成的反峰值图案光强度分布的第一脉冲激光束，并用第一脉冲激光束照射设置在基板上的薄膜，由此熔化和结晶 该薄膜的方法包括：当利用第二激光束照射第二激光束时，使用设置在第二激光束的光路上的偏振元件来选择第二激光束的所需一个反射光分量 通过检测所选择的反射光分量将衬底的高度校正到预定高度，并将第一脉冲激光束照射到具有校正高度的薄膜上。

公开(公告)号：US20070063228A1

公开(公告)日：2007-03-22

申请号：US11432387

申请日：2006-05-12

申请人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

发明人： Tomoya Kato ,  Masakiyo Matsumura ,  Yoshiaki Nakazaki

IPC分类号： H01L27/148 ,  H01L29/768 ,  H01L29/74

CPC分类号： H01L29/78621 ,  H01L29/04 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78675 ,  H01L29/78678

摘要： An object of the present invention is to provide a thin film transistor having a high mobility and having fewer fluctuations in the mobility or threshold voltage characteristics. A non-single-crystal semiconductor thin film having a thickness of less than 50 nm and disposed on an insulating substrate is irradiated with laser light having an inverse-peak-patterned light intensity distribution to grow crystals unidirectionally in a lateral direction. Thus, band-like crystal grains having a dimension in a crystal growth direction, which is longer than a width, are arranged adjacent to each other in a width direction to form a crystal grain array. A source region and a drain region of a TFT are formed so that a current flows in the crystal growth direction in an area including a plurality of crystal grains of this crystal grain array.

摘要翻译： 本发明的目的是提供一种具有高迁移率并具有较少的迁移率或阈值电压特性波动的薄膜晶体管。 用具有反峰图案的光强度分布的激光照射厚度小于50nm并且设置在绝缘基板上的非单晶半导体薄膜，以在横向上单向生长晶体。 因此，具有长于宽度的晶体生长方向的尺寸的带状晶粒沿宽度方向彼此相邻地布置以形成晶粒阵列。 形成TFT的源极区域和漏极区域，使得电流在包含该晶体阵列的多个晶粒的区域中的晶体生长方向上流动。