公开(公告)号：US06284394B1

公开(公告)日：2001-09-04

申请号：US09239965

申请日：1999-01-29

申请人： Michio Arai ,  Isamu Kobori ,  Etsuo Mitsuhashi

发明人： Michio Arai ,  Isamu Kobori ,  Etsuo Mitsuhashi

IPC分类号： B32B3300

CPC分类号： H01L51/5088 ,  H01L51/5092 ,  Y10S428/917

摘要： The organic EL device of the present invention fulfils the object of realizing an EL device which exhibits an excellent electron and hole injecting efficiency and an improved light emitting efficiency and which can be operated at a low drive voltage and manufactured at a reduced cost. In order to attain such object, the organic EL device comprises a hole injecting electrode, an electron injecting electrode, and one or more organic layers between the electrodes wherein at least one of said organic layers has a light emitting function. A high resistivity inorganic electron injecting layer is provided between said organic layer and said electron injecting electrode. This layer comprises a first component comprising at least one oxide of an element selected from alkali metal elements, alkaline earth metal elements, and lanthanide elements, and a second component comprising at least one metal having a work function of 3 to 5 eV, and this layer has conduction paths for hole blockage and electron transportation. An inorganic insulative hole injecting and transporting layer is provided between the light emitting layer and the hole injecting layer. This layer contains oxide of silicon and/or germanium as its main component, and such main component has an average composition of: (Si1−xGex)Oy wherein 0≦x≦1 and 1.7≦y≦1.99.

摘要翻译： 本发明的有机EL器件实现了实现具有优异的电子和空穴注入效率和改善的发光效率的EL器件的目的，并且可以以低的驱动电压操作并且以降低的成本制造。 为了达到这样的目的，有机EL器件包括空穴注入电极，电子注入电极和电极之间的一个或多个有机层，其中至少一个所述有机层具有发光功能。 在所述有机层和所述电子注入电极之间设置高电阻率无机电子注入层。 该层包括包含至少一种选自碱金属元素，碱土金属元素和镧系元素的元素的至少一种氧化物的第一组分和包含至少一种功函数为3至5eV的金属的第二组分，并且该 层具有用于空穴阻塞和电子传输的传导路径。 在发光层和空穴注入层之间设置无机绝缘性空穴注入输送层。 该层含有硅和/或锗的氧化物作为其主要成分，并且这种主要成分具有平均组成：其中0≤x≤1和1.7≤y≤1.99。

公开(公告)号：US06262433B1

公开(公告)日：2001-07-17

申请号：US09339880

申请日：1999-06-25

申请人： Michio Arai ,  Isamu Kobori ,  Etsuo Mitsuhashi

发明人： Michio Arai ,  Isamu Kobori ,  Etsuo Mitsuhashi

IPC分类号： H01L3524

CPC分类号： H01L51/5072 ,  H01L51/5012 ,  H01L51/5092 ,  H01L51/5096 ,  H01L51/5206 ,  H01L51/5221 ,  H01L51/525

摘要： The object of the invention is to provide an organic EL device which possesses the merits of both an organic material and an inorganic material, has high efficiency and an extended life, and can be fabricated at low cost. This object is achieved by the provision of an organic EL device comprising a hole injecting electrode, an electron injecting electrode and an organic layer interleaved between these electrodes and including at least a light emitting layer. A high-resistance inorganic electron transporting layer is interleaved between the light emitting layer and the electron injecting electrode and includes a conduction path for blocking holes and transporting electrons. An organic electron injecting layer is interleaved between the high-resistance inorganic electron transporting layer and the electron injecting electrode.

摘要翻译： 本发明的目的是提供一种具有有机材料和无机材料的优点的有机EL器件，其效率高，寿命长，并且可以以低成本制造。 该目的通过提供一种包括空穴注入电极，电子注入电极和在这些电极之间交错并且至少包括发光层的有机层的有机EL器件来实现。 高电阻无机电子传输层交错在发光层和电子注入电极之间，并且包括用于阻挡空穴和传输电子的导电路径。 在高电阻无机电子传输层和电子注入电极之间插入有机电子注入层。

公开(公告)号：US06252246B1

公开(公告)日：2001-06-26

申请号：US09339804

申请日：1999-06-25

申请人： Michio Arai ,  Isamu Kobori ,  Etsuo Mitsuhashi

发明人： Michio Arai ,  Isamu Kobori ,  Etsuo Mitsuhashi

IPC分类号： H01L3524

CPC分类号： H01L51/5088 ,  H01L51/5012 ,  H01L51/5092

摘要： The object of the invention is to provide a high-efficiency, long-life yet low-cost organic EL device which possesses the merits of both an organic material and an inorganic material. This object is achieved by the provision of an organic EL device which comprises a hole injecting electrode and an electron injecting electrode between which an organic layer having at least a light emitting layer is provided, an inorganic insulating electron transporting layer provided between the light emitting layer and the electron injecting layer, a hole injecting and transporting layer provided between the light emitting layer and the hole injecting electrode, and an organic electron injecting layer provided between the inorganic insulating electron transporting layer and the electron injecting layer.

摘要翻译： 本发明的目的是提供一种具有有机材料和无机材料的优点的高效率，长寿命但低成本的有机EL器件。 该目的通过提供一种有机EL器件来实现，该有机EL器件包括空穴注入电极和电子注入电极，在该电子注入电极之间具有至少具有发光层的有机层，设置在发光层之间的无机绝缘电子传输层 电子注入层，设置在发光层和空穴注入电极之间的空穴注入输送层，以及设置在无机绝缘电子输送层与电子注入层之间的有机电子注入层。

公开(公告)号：US06338908B1

公开(公告)日：2002-01-15

申请号：US09174454

申请日：1998-10-19

申请人： Michio Arai ,  Isamu Kobori ,  Etsuo Mitsuhashi

发明人： Michio Arai ,  Isamu Kobori ,  Etsuo Mitsuhashi

IPC分类号： H01J162

CPC分类号： H01L51/5088

摘要： An organic EL device has a hole injecting electrode, an electron injecting electrode, at least one organic layer between the electrodes, and an inorganic insulating hole injecting and transporting layer between the hole injecting electrode and the organic layer. The inorganic insulating hole injecting and transporting layer contains silicon oxide and/or germanium oxide as a main component, the main component being represented by (Si1−xGex)Oy wherein 0≦x≦1 and 1.8≦y≦2.5, and further contains 0.01 to 2% by weight of at least one element selected from among Ar, Kr, Xe, and Ne. The device has the advantages of both organic and inorganic materials, a long lifetime, improved efficiency, low operating voltage, and low cost, and can provide a high luminance of light emission when applied to displays of the time-division driving mode, and realize large screen, high definition displays.

摘要翻译： 有机EL器件具有空穴注入电极，电子注入电极，电极之间的至少一个有机层以及空穴注入电极和有机层之间的无机绝缘性空穴注入输送层。 无机绝缘空穴注入传输层含有氧化硅和/或氧化锗作为主要成分，主成分由（Si1-xGex）Oy表示，其中0 <= x <= 1且1.8 <= y <= 2.5， 并且还含有0.01〜2重量％的选自Ar，Kr，Xe和Ne中的至少一种元素。 该器件具有有机材料和无机材料的优点，使用寿命长，效率高，工作电压低，成本低，适用于时分驱动模式的显示器时可提供高亮度的发光，实现 大屏幕，高清显示屏。

公开(公告)号：US06322910B1

公开(公告)日：2001-11-27

申请号：US09339807

申请日：1999-06-25

申请人： Michio Arai ,  Isamu Kobori ,  Etsuo Mitsuhashi

发明人： Michio Arai ,  Isamu Kobori ,  Etsuo Mitsuhashi

IPC分类号： H05B3300

CPC分类号： H01L51/5092

摘要： An organic EL device comprises a substrate, a hole injecting electrode and an electron injecting electrode formed on the substrate and at least an organic layer taking part in light emitting function and located between these electrodes. Between the electron injecting electrode and the organic layer there is an inorganic insulating electron injecting layer comprising as a main component an oxide having an electron affinity of up to 3 eV with a stabilizing component added thereto. The organic EL device possesses the merits of both an organic material and an inorganic material, and has an extended life, an improved efficiency, a low driving voltage, and so is of great practical value.

摘要翻译： 有机EL器件包括基板，空穴注入电极和形成在基板上的电子注入电极，至少有一部分发光功能的有机层位于这些电极之间。 在电子注入电极和有机层之间，存在无机绝缘电子注入层，其主要成分为具有高达3eV的电子亲和力的氧化物，并加入稳定化成分。 有机EL器件具有有机材料和无机材料的优点，具有使用寿命长，效率提高，驱动电压低等特点，具有很大的实用价值。

公开(公告)号：US07271410B2

公开(公告)日：2007-09-18

申请号：US10713275

申请日：2003-11-17

申请人： Isamu Kobori ,  Michio Arai

发明人： Isamu Kobori ,  Michio Arai

IPC分类号： H01L29/04 ,  H01L27/15

CPC分类号： H01L21/02675 ,  H01L21/02532 ,  H01L21/02595 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/78675

摘要： An active matrix circuit comprises a semiconductor layer, and a p-type impurity region provided in said semiconductor layer, and an interlayer insulating film comprising silicon nitride provided over said semiconductor layer.

摘要翻译： 有源矩阵电路包括半导体层和设置在所述半导体层中的p型杂质区，以及包含设置在所述半导体层上的氮化硅的层间绝缘膜。

公开(公告)号：US06514803B1

公开(公告)日：2003-02-04

申请号：US08963588

申请日：1997-11-04

申请人： Michio Arai ,  Isamu Kobori

发明人： Michio Arai ,  Isamu Kobori

IPC分类号： H01L2184

CPC分类号： H01L21/0242 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/0262 ,  H01L29/4908 ,  H01L29/66757 ,  H01L29/78666

摘要： In a thin film semiconductor device having a substrate (1), an active layer (3, 6, 9), a gate insulation layer (4), and a gate electrode (5), said active layer is produced through the steps of producing an amorphous silicon layer on said substrate through a CVD process by using a gas made up of poly silane SinH2(n+1), where n is an integer, and chloride gas, and effecting solid phase growth to produce said amorphous silicon layer. The addition of chlorine to the CVD gas used in producing the amorphous silicon layer makes it possible to produce the amorphous silicon layer at a lower temperature with a rapid growth rate. A thin film semiconductor device thus produced has the advantages of high mobility and low threshold voltage.

摘要翻译： 在具有基板（1），有源层（3,6,9），栅极绝缘层（4）和栅电极（5）的薄膜半导体器件中，通过以下步骤制造所述有源层： 通过使用由其中n为整数的聚硅烷SinH 2（n + 1）构成的气体和氯化物气体通过CVD工艺在所述衬底上形成非晶硅层，并进行固相生长以产生所述非晶硅层。 向用于制造非晶硅层的CVD气体中加入氯使得可以以较快的生长速率在较低温度下生产非晶硅层。 这样制造的薄膜半导体器件具有迁移率高，阈值电压低的优点。

公开(公告)号：US07407838B2

公开(公告)日：2008-08-05

申请号：US10623581

申请日：2003-07-22

申请人： Isamu Kobori ,  Michio Arai

发明人： Isamu Kobori ,  Michio Arai

IPC分类号： H01L21/00

CPC分类号： H01L21/02667 ,  H01L21/02532 ,  H01L21/2022 ,  H01L21/2026 ,  H01L27/12 ,  H01L27/1285 ,  H01L29/78675

摘要： A method of manufacturing a semiconductor characterized in that, in polycrystallizing an amorphous silicon thin film formed on a substrate through an annealing process, the amorphous silicon thin film has a plane area of 1000 μm2 or less. A thin-film transistor characterized by comprising an active silicon film which is formed of a plurality of island-like regions arranged in parallel to each other, each of the island-like regions being formed of a polycrystal silicon thin film having a plane area of 1000 μm2 or less. A method of manufacturing a thin-film transistor comprising the steps of: forming an amorphous silicon thin film on a substrate; processing the amorphous silicon thin film into a plurality of island-like regions each having a plane area of 1000 μm2 or less; polycrystallizing an amorphous silicon thin film that forms the island-like regions through an annealing process; and forming a thin-film transistor having at least one of the plurality of island-like regions as an active silicon layer.

摘要翻译： 一种制造半导体的方法，其特征在于，通过退火处理将形成在基板上的非晶硅薄膜多晶化，所述非晶硅薄膜的平面面积为1000μm以下。 一种薄膜晶体管，其特征在于包括由彼此平行布置的多个岛状区域形成的活性硅膜，每个所述岛状区域由多晶硅薄膜形成，所述多晶硅薄膜的平面面积 1000小时以下。 一种制造薄膜晶体管的方法，包括以下步骤：在衬底上形成非晶硅薄膜; 将非晶硅薄膜加工成平均面积为1000μm以下的多个岛状区域; 通过退火处理形成岛状区域的非晶硅薄膜多晶化; 以及形成具有所述多个岛状区域中的至少一个作为有源硅层的薄膜晶体管。

公开(公告)号：US5821560A

公开(公告)日：1998-10-13

申请号：US609433

申请日：1996-03-01

申请人： Michio Arai ,  Kazushi Sugiura ,  Ichiro Takayama ,  Yukio Yamauchi ,  Isamu Kobori ,  Mitsufumi Codama ,  Naoya Sakamoto

发明人： Michio Arai ,  Kazushi Sugiura ,  Ichiro Takayama ,  Yukio Yamauchi ,  Isamu Kobori ,  Mitsufumi Codama ,  Naoya Sakamoto

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L29/04 ,  H01L29/76

CPC分类号： H01L29/66765 ,  H01L29/78648

摘要： A thin film transistor which includes an insulation base, first and second gate electrodes, first and second insulation layers, an active layer of semiconductor material, a source electrode and a drain electrode, in which a lateral length of the first gate electrode is narrower than a lateral length of the second gate electrode. Also, the first gate is electrically insulated from the active layer of semiconductor material by the first insulation layer so that the drain current saturates in a high drain voltage region.

摘要翻译： 一种薄膜晶体管，包括绝缘基底，第一和第二栅电极，第一和第二绝缘层，半导体材料的有源层，源电极和漏电极，其中第一栅电极的横向长度比 第二栅电极的横向长度。 此外，第一栅极通过第一绝缘层与半导体材料的有源层电绝缘，使得漏极电流在高漏极电压区域中饱和。

公开(公告)号：US5591988A

公开(公告)日：1997-01-07

申请号：US477104

申请日：1995-06-07

申请人： Michio Arai ,  Takashi Inushima ,  Mitsufumi Codama ,  Kazushi Sugiura ,  Ichiro Takayama ,  Isamu Kobori ,  Yukio Yamauchi ,  Naoya Sakamoto

发明人： Michio Arai ,  Takashi Inushima ,  Mitsufumi Codama ,  Kazushi Sugiura ,  Ichiro Takayama ,  Isamu Kobori ,  Yukio Yamauchi ,  Naoya Sakamoto

IPC分类号： H01L21/84 ,  H01L27/12 ,  H01L27/146 ,  H01L31/113 ,  H01L29/04 ,  H01L31/036 ,  H01L31/0376 ,  H01L31/20

CPC分类号： H01L27/14643 ,  H01L21/84 ,  H01L27/1237 ,  H01L31/1133

摘要： A substrate (1) has a surface covered with an insulation layer (2), on which an active layer (3') made of non-single crystal silicon through thin film technique is provided. A gate electrode layer (5') is partially provided on said active layer through a gate insulation layer (4). Said active layer (3') is subject to injection of P-type or N-type impurities to provide an image sensor of MOS structure. Bias potential is applied to a gate electrode so that a circuit between a source and a drain is in an On state, so that input light through said substrate or said gate electrode is applied to said active layer, and electrical output depending upon said input light is obtained from said source electrode or said drain electrode. Other MOS transistors for switching element and/or shift registers for operating said image sensor are provided on said substrate (1). Said active layer (3') is obtained by crystallizing said amorphous silicon layer through a laser anneal process or a high temperature anneal process, and hydrogenation process, and the trap density of said active layer is less than 5.times.10.sup.11 /cm.sup.2. Optical response time is short, less than 500 .mu.sec, so, high speed operation ten times as high as that of a prior image sensor is possible.

摘要翻译： 基板（1）具有被绝缘层（2）覆盖的表面，在其上提供通过薄膜技术由非单晶硅制成的有源层（3'）。 栅极电极层（5'）通过栅极绝缘层（4）部分地设置在所述有源层上。 所述有源层（3'）经受注入P型或N型杂质以提供MOS结构的图像传感器。 将偏置电位施加到栅电极，使得源极和漏极之间的电路处于导通状态，使得通过所述衬底或所述栅电极的输入光被施加到所述有源层，并且根据所述输入光输出电输出 从所述源电极或所述漏电极获得。 用于操作所述图像传感器的用于开关元件和/或移位寄存器的其它MOS晶体管设置在所述基板（1）上。 所述有源层（3'）是通过激光退火工艺或高温退火工艺和氢化工艺使所述非晶硅层结晶而获得的，并且所述有源层的陷阱密度小于5×10 11 / cm 2。 光学响应时间短，小于500μs，因此可以实现高于现有图像传感器的10倍的高速度运行。