摘要:
An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
摘要:
A light-emitting device includes: a plurality of light-emitting elements each of which has an anode, a thin organic light-emitting layer, and a cathode sequentially stacked on a substrate and emits light by excitation due to an electric field, the anode being separated from another anode by an insulating pixel partition wall; an organic buffer layer that is formed of an organic compound, covers an area larger than a region where the plurality of light-emitting elements are formed, has a step difference smaller than that of an upper surface of the cathode on the substrate, and is approximately flat; and first and second gas barrier layers that are formed of an inorganic compound, are disposed on an outer surface of the organic buffer layer, and protect the plurality of light-emitting elements against air. Only one of the first and second gas barrier layers is adjacent to an upper surface of an insulating layer formed of an inorganic compound on the substrate so as to cover an area larger than that of the organic buffer layer.
摘要:
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
摘要:
Provided is a storage system of a mobile terminal and an access control method for more securely preventing unauthorized access to data stored in a storage medium attachable and detachable to and from the mobile terminal. The storage system of the mobile terminal includes the steps of: receiving an SMS message from an OTA server; relaying the SMS message including an access restriction request to request restriction of access to storage data stored in the USIM; and setting the USIM to an access restriction state in which access from the outside to the storage data is restricted based on the access restriction request included in the relayed SMS message.
摘要:
An EL display device capable of performing clear multi-gradation color display and electronic equipment provided with the EL display device are provided, wherein gradation display is performed according to a time-division driving method in which the luminescence and non-luminescence of an EL element (109) disposed in a pixel (104) are controlled by time, and the influence by the characteristic variability of a current controlling TFT (108) is prevented. When this method is used, a data signal side driving circuit (102) and a gate signal side driving circuit (103) are formed with TFTs that use a silicon film having a peculiar crystal structure and exhibit an extremely high operation speed.
摘要:
A reduction in contaminating impurities in a TFT, and a TFT which is reliable, is obtained in a semiconductor device which uses the TFT. By removing contaminating impurities residing in a film interface of the TFT using a solution containing fluorine, a reliable TFT can be obtained.
摘要:
An EL display having high operating performance and reliability is provided. LDD regions 15a through 15d of a switching TFT 201 formed in a pixel are formed such that they do not overlap gate electrodes 19a and 19b to provide a structure which is primarily intended for the reduction of an off-current. An LDD region 22 of a current control TFT 202 is formed such that it partially overlaps a gate electrode 35 to provide a structure which is primarily intended for the prevention of hot carrier injection and the reduction of an off-current. Appropriate TFT structures are thus provided depending on required functions to improve operational performance and reliability.
摘要:
A light-emitting device includes: a plurality of light-emitting elements each of which has an anode, a thin organic light-emitting layer, and a cathode sequentially stacked on a substrate and emits light by excitation due to an electric field, the anode being separated from another anode by an insulating pixel partition wall; an organic buffer layer that is formed of an organic compound, covers an area larger than a region where the plurality of light-emitting elements are formed, has a step difference smaller than that of an upper surface of the cathode on the substrate, and is approximately flat; and first and second gas barrier layers that are formed of an inorganic compound, are disposed on an outer surface of the organic buffer layer, and protect the plurality of light-emitting elements against air. Only one of the first and second gas barrier layers is adjacent to an upper surface of an insulating layer formed of an inorganic compound on the substrate so as to cover an area larger than that of the organic buffer layer.
摘要:
The present invention relates to a semiconductor device formed in a self-light-emitting apparatus having a substrate and a plurality of self-light-emitting elements formed on the substrate, the semiconductor device being used to drive one of the self-light-emitting elements. The semiconductor device includes an active layer of semiconductor material, in which a source region and a drain region are formed, a source electrode having a multi-layered structure including an upper side layer of titanium nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to the source region, a drain electrode having a multi-layered structure including an upper side layer of titan nitride and a lower side layer of a high melting point metal having low resistance, the source electrode electrically being coupled to said drain region, an insulation layer formed on the active layer, and a gate electrode formed on the insulation layer.
摘要:
An organic EL display device has a substrate, a plurality of organic EL elements formed on the substrate and a plurality of thin film transistors formed on the substrate. The transistors are connected to the respective EL elements for controlling current applied to the respective elements. Each of the transistors includes an active layer of semiconductor material, formed on the substrate, a source region and a drain region being formed in the active layer, a source electrode of aluminum material electrically coupled to the source region formed in the active layer, a drain electrode of aluminum material electrically coupled to the drain region formed in the active layer, an insulation layer formed on the active layer, a gate electrode formed on the insulation layer, a first barrier metal layer of titanium nitride containing equal to or less than 50 atm % of nitrogen or titanium, inserted between the source electrode and the source region of the active layer, and a second barrier metal layer of titanium nitride containing equal to or less than 50 atm % of nitrogen or titanium, inserted between the drain electrode and the drain region of the active layer.