APPARATUSES, SYSTEMS, AND METHODS FOR SYSTEM ON CHIP REPLACEMENT MODE

    公开(公告)号:US20220036939A1

    公开(公告)日:2022-02-03

    申请号:US16942503

    申请日:2020-07-29

    Abstract: Apparatuses, systems, and methods for a system on chip (SoC) replacement mode. A memory device may be coupled to a SoC which may act as a controller of the memory. Commands and addresses may be sent along a command/address (CA) bus to a first decoder of the memory. The first decoder may use a first reference voltage to determine a value of signals along the CA bus. One of the pins of the CA bus may be coupled to a second decoder which may use a different second reference voltage. When the voltage on the pin exceeds the second reference voltage, the memory device may enter a SoC replacement mode, in which the memory may take various actions to preserve data integrity, while a new SoC comes online.

    Clock signal drivers for read and write memory operations

    公开(公告)号:US10937473B2

    公开(公告)日:2021-03-02

    申请号:US16058687

    申请日:2018-08-08

    Abstract: Drivers for read and write operations of memory arrays are described. In one aspect, a memory device can include an input/output (I/O) circuit to facilitate read and write operations with the memory device. One driver can generate clock signals for the command circuit to aid with the performance of the write operations. Another driver can generate clock signals for the I/O circuit to aid with the performance of the read operations.

    APPARATUSES AND METHODS OF POWER SUPPLY CONTROL FOR SENSE AMPLIFIERS

    公开(公告)号:US20230290386A1

    公开(公告)日:2023-09-14

    申请号:US17692066

    申请日:2022-03-10

    CPC classification number: G11C7/08 G11C8/10

    Abstract: Apparatuses for controlling power supply to sense amplifiers are described. An example apparatus includes a bank. The bank includes: a first plurality of memory cells; a second plurality of memory cells; first sense amplifiers coupled to the first plurality of memory cells; second sense amplifiers coupled to the second plurality of memory cells; a first power control circuit and a coupled to the first sense amplifiers at a common power supply node; and a second power control circuit coupled to the second sense amplifiers at the common power supply node. The first and second power control circuits receive a plurality of control signals. The first and second power control circuits comprise first and second drive strengths respectively responsive to activation of a control signal of the plurality of control signals. The first drive strength and the second drive strength are different from each other.

    Apparatuses and methods for providing power responsive to internal power usage

    公开(公告)号:US11462259B2

    公开(公告)日:2022-10-04

    申请号:US17114338

    申请日:2020-12-07

    Abstract: Apparatuses and methods for controlling internal current are disclosed herein, An example apparatus includes a semiconductor device including a power node. The semiconductor device receives power as an internal current, and further operates in a first mode and a second mode. The semiconductor device consumes more power in the second mode than in the first mode. The semiconductor device consumes a first portion of the internal current and provides a second portion of the internal current as an external current at the power node during the first mode. The semiconductor device consumes a third portion of the internal current that is greater than the first portion of the internal current during the second mode.

    System and method for duty cycle correction

    公开(公告)号:US10218342B2

    公开(公告)日:2019-02-26

    申请号:US15636379

    申请日:2017-06-28

    Abstract: Apparatuses and methods for correcting a duty cycle of a clock signal are described. An example apparatus includes: a duty cycle corrector (DCC) that receives an input clock signal and a control signal and produces an output clock signal responsive, at least in part, to the input clock signal and the control signal; a circuit that divides a frequency of the input clock signal by a positive even integer and generates an intermediate clock signal; and a phase detector that generates the control signal responsive, at least in part, to a difference in phase between the output clock signal and the intermediate clock signal.

    Semiconductor device having DLL circuit
    19.
    发明授权
    Semiconductor device having DLL circuit 有权
    具有DLL电路的半导体器件

    公开(公告)号:US09065456B2

    公开(公告)日:2015-06-23

    申请号:US14317893

    申请日:2014-06-27

    CPC classification number: H03L7/1972 H03L7/0814

    Abstract: Disclosed herein is a device includes a first delay circuit delaying a first clock signal according to a count value to generate a second clock signal, a phase determination circuit comparing a phase of the first clock signal with a phase of the second clock signal to generate a phase determination signal, an up-down counter updating the count value according to the phase determination signal each time an update signal is activated, and an update control circuit generating the update signal at a variable interval.

    Abstract translation: 本文公开了一种装置,包括:第一延迟电路,根据计数值延迟第一时钟信号以产生第二时钟信号;相位确定电路,将第一时钟信号的相位与第二时钟信号的相位进行比较,以产生 相位确定信号,每当激活更新信号时根据相位确定信号更新计数值的升降计数器,以及以可变间隔产生更新信号的更新控制电路。

    APPARATUSES, SYSTEMS, AND METHODS FOR SYSTEM ON CHIP REPLACEMENT MODE

    公开(公告)号:US20220157367A1

    公开(公告)日:2022-05-19

    申请号:US17590710

    申请日:2022-02-01

    Abstract: Apparatuses, systems, and methods for a system on chip (SoC) replacement mode. A memory device may be coupled to a SoC which may act as a controller of the memory. Commands and addresses may be sent along a command/address (CA) bus to a first decoder of the memory. The first decoder may use a first reference voltage to determine a value of signals along the CA bus. One of the pins of the CA bus may be coupled to a second decoder which may use a different second reference voltage. When the voltage on the pin exceeds the second reference voltage, the memory device may enter a SoC replacement mode, in which the memory may take various actions to preserve data integrity, while a new SoC comes online.

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