公开(公告)号：US09358753B2

公开(公告)日：2016-06-07

申请号：US14788890

申请日：2015-07-01

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  David A. Kewley ,  Kyle Armstrong ,  Michael Dean Van Patten ,  Michael D. Hyatt

IPC: B32B3/30 ,  G03F7/00 ,  G03F7/20 ,  G03F7/40 ,  H01L21/311 ,  H01L21/033

CPC classification number: B32B3/30 ,  G03F7/0035 ,  G03F7/2002 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  Y10T428/24521 ,  Y10T428/24612

Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.

公开(公告)号：US09330914B2

公开(公告)日：2016-05-03

申请号：US14049135

申请日：2013-10-08

Applicant: Micron Technology, Inc.

Inventor： Scott L. Light ,  Vishal Sipani ,  Michael D. Hyatt

IPC: H01L21/311 ,  H01L21/033

CPC classification number: H01L21/0337

Abstract: A method including forming a line pattern in a substrate includes using a plurality of longitudinally spaced projecting features formed along respective guide lines as a template in forming a plurality of directed self-assembled (DSA) lines that individually comprise at least one of (a): the spaced projecting features and DSA material longitudinally there-between, and (b): are laterally between and laterally spaced from immediately adjacent of the guide lines. Substrate material elevationally inward of and laterally between the DSA lines may be processed using the DSA lines as a mask.

Abstract translation: 包括在衬底中形成线图案的方法包括在形成多个定向自组装（DSA）线时使用沿着相应引导线形成的多个纵向间隔开的突出特征作为模板，所述定向自组装（DSA）线分别包括以下中的至少一个：（a） ：在其间纵向延伸的间隔开的突出特征和DSA材料，和（b）之间：在紧邻引导线之间横向间隔开并且横向间隔开。 可以使用DSA线作为掩模来处理DSA线之间和横向上的基底材料。

公开(公告)号：US20150321447A1

公开(公告)日：2015-11-12

申请号：US14788890

申请日：2015-07-01

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  David A. Kewley ,  Kyle Armstrong ,  Michael Dean Van Patten ,  Michael D. Hyatt

IPC: B32B3/30

CPC classification number: B32B3/30 ,  G03F7/0035 ,  G03F7/2002 ,  G03F7/40 ,  H01L21/0337 ,  H01L21/31144 ,  Y10T428/24521 ,  Y10T428/24612

Abstract: Substrates and methods of forming a pattern on a substrate. The pattern includes a repeating pattern region and a pattern-interrupting region adjacent to the repeating pattern region. A mask is formed on the substrate, with the mask including the repeating pattern region and the pattern-interrupting region and which are formed using two separate masking steps. The mask is used in forming the pattern into underlying substrate material on which the mask is received. Substrates comprising masks are also disclosed.

Abstract translation: 衬底和在衬底上形成图案的方法。 图案包括重复图案区域和与重复图案区域相邻的图案中断区域。 在衬底上形成掩模，其中掩模包括重复图案区域和图案中断区域，并且使用两个单独的掩蔽步骤形成掩模。 该掩模用于将图案形成到其上接收掩模的下面的基底材料中。 还公开了包括掩模的基板。

公开(公告)号：US20150235938A1

公开(公告)日：2015-08-20

申请号：US14699664

申请日：2015-04-29

Applicant: Micron Technology, Inc.

Inventor： Vishal Sipani ,  Kyle Armstrong ,  Michael D. Hyatt ,  Michael Dean Van Patten ,  David A. Kewley ,  Ming-Chuan Yang

IPC: H01L23/525 ,  H01L23/532

CPC classification number: H01L23/525 ,  H01L21/0337 ,  H01L21/0338 ,  H01L21/31144 ,  H01L21/32139 ,  H01L21/76816 ,  H01L23/528 ,  H01L23/53209 ,  H01L23/53257 ,  H01L23/53271 ,  H01L23/5329 ,  H01L2924/0002 ,  H01L2924/00

Abstract: Some embodiments include methods of forming electrically conductive lines. Photoresist features are formed over a substrate, with at least one of the photoresist features having a narrowed region. The photoresist features are trimmed, which punches through the narrowed region to form a gap. Spacers are formed along sidewalls of the photoresist features. Two of the spacers merge within the gap. The photoresist features are removed to leave a pattern comprising the spacers. The pattern is extended into the substrate to form a plurality of recesses within the substrate. Electrically conductive material is formed within the recesses to create the electrically conductive lines. Some embodiments include semiconductor constructions having a plurality of lines over a semiconductor substrate. Two of the lines are adjacent to one another and are substantially parallel to one another except in a region wherein said two of the lines merge into one another.

Abstract translation: 一些实施例包括形成导电线的方法。 光致抗蚀剂特征形成在衬底上，其中至少一个光致抗蚀剂特征具有变窄的区域。 修整光致抗蚀剂特征，其穿过狭窄区域以形成间隙。 隔板沿光致抗蚀剂特征的侧壁形成。 间隙中的两个垫片合并在一起。 去除光致抗蚀剂特征以留下包括间隔物的图案。 该图案延伸到衬底中以在衬底内形成多个凹槽。 导电材料形成在凹槽内以形成导电线。 一些实施例包括在半导体衬底上具有多条线的半导体结构。 两条线彼此相邻并且基本上彼此平行，除了在所述两条线彼此合并的区域中。