公开(公告)号：US09064565B2

公开(公告)日：2015-06-23

申请号：US14047605

申请日：2013-10-07

Applicant: Micron Technology, Inc.

Inventor： Fabio Pellizzer ,  Roberto Bez ,  Ferdinando Bedeschi ,  Roberto Gastaldi

IPC: G11C13/00 ,  G11C11/56 ,  H01L27/24 ,  H01L45/00

CPC classification number: G11C13/0004 ,  G11C11/56 ,  G11C11/5678 ,  G11C13/004 ,  G11C13/0069 ,  G11C2013/0054 ,  G11C2213/79 ,  H01L27/2427 ,  H01L27/2463 ,  H01L45/04 ,  H01L45/06 ,  H01L45/1233 ,  H01L45/126 ,  H01L45/143 ,  H01L45/144

Abstract: A phase change memory device with memory cells is formed from a phase change memory element and a selection switch. A reference cell is formed from a similar phase change memory element and an associated selection switch and is associated to a group of memory cells to be read. An electrical quantity of the group of memory cells is compared with an analogous electrical quantity of the reference cell, thereby compensating for drift in the properties of the memory cells.

Abstract translation: 具有存储单元的相变存储器件由相变存储器元件和选择开关形成。 参考单元由相似的相变存储器元件和相关联的选择开关形成，并且与要读取的一组存储器单元相关联。 将该组存储器单元的电量与参考单元的类似电量进行比较，由此补偿存储单元的特性的漂移。