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公开(公告)号：US20220057963A1
公开(公告)日：2022-02-24
申请号：US16997303
申请日：2020-08-19
Applicant: Micron Technology, Inc.
Inventor： Seungjune Jeon , Jiangli Zhu
Abstract: A method includes providing, via a command, a request of enablement of a media management operation to a memory sub-system. The method further includes providing, via the command, an indication of one of a plurality of write types to the media management operation to the memory sub-system. The media management operation can be performed using the indicated write type in response to receipt of the command.
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12.发明公开公开(公告)号：US20240347116A1
公开(公告)日：2024-10-17
申请号：US18755046
申请日：2024-06-26
Applicant: Micron Technology, Inc.
Inventor： Wei Wang , Seungjune Jeon , Yang Liu , Charles See Yeung Kwong
CPC classification number: G11C16/3431 , G11C16/0483
Abstract: Systems and methods are disclosed including a memory device and a processing device operatively coupled to the memory device. The processing device can perform operations comprising identifying one or more valid pages of a first block, the first block being associated with a first management unit of the memory device; responsive to determining that a data integrity metric value associated with the first block satisfies a threshold criterion, causing the memory device to copy data from the one or more valid pages to a destination set of pages associated with a second block of a second management unit; marking each page of the one or more valid pages as invalid; and performing an error correcting operation, using one or more invalid pages of the first block, on a third block of the first management unit.
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公开(公告)号：US20240329852A1
公开(公告)日：2024-10-03
申请号：US18739982
申请日：2024-06-11
Applicant: Micron Technology, Inc.
Inventor： Li-Te Chang , Murong Lang , Charles See Yeung Kwong , Vamsi Pavan Rayaprolu , Seungjune Jeon , Zhenming Zhou
CPC classification number: G06F3/0616 , G06F3/0653 , G06F3/0679 , G06N20/00
Abstract: A processing device in a memory sub-system determines one or more read margin levels associated with the memory device. A machine learning model is applied to the one or more read margin levels to generate a read margin prediction value associated with the memory device. Based on the margin prediction value, the memory device is assigned to a selected bin of a set of bins. A media scan operation is executed on the memory device in accordance with a scan frequency associated with the selected bin.
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公开(公告)号：US12050777B2
公开(公告)日：2024-07-30
申请号：US17880213
申请日：2022-08-03
Applicant: Micron Technology, Inc.
Inventor： Li-Te Chang , Murong Lang , Charles See Yeung Kwong , Vamsi Pavan Rayaprolu , Seungjune Jeon , Zhenming Zhou
CPC classification number: G06F3/0616 , G06F3/0653 , G06F3/0679 , G06N20/00
Abstract: A processing device in a memory sub-system determines whether a media endurance metric associated with a memory block of a memory device satisfies one or more conditions. In response to the one or more conditions being satisfied, one or more read margin levels corresponding to a page type associated with the memory device are determined. A machine learning model is applied to the one or more read margin levels to generate a margin prediction value based on the page type and a wordline group associated with the memory device. Based on the margin prediction value, the memory device is assigned to a selected bin of a set of bins. A media scan operation is executed on the memory device in accordance with a scan frequency associated with the selected bin.
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公开(公告)号：US20240111431A1
公开(公告)日：2024-04-04
申请号：US17958210
申请日：2022-09-30
Applicant: Micron Technology, Inc.
Inventor： Ying Yu Tai , Seungjune Jeon
IPC: G06F3/06
CPC classification number: G06F3/0616 , G06F3/064 , G06F3/0652 , G06F3/0679
Abstract: A system can include a memory device a memory device comprising multiple dies, and a processing device, operatively coupled with the memory device, to perform various operations including identifying multiple management units to be programmed, where one management unit contains memory cells from a die having one endurance metric and another management unit contains memory cells from a die having another endurance metric, and determining a value of a media endurance metric for each management unit. The operations further include determining, for each management unit, a respective endurance exhaustion parameter defined by a relationship media endurance metrics, and distributing operations to each management unit based on the endurance exhaustion parameter.
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Patent Agency Ranking
公开(公告)号：US11636008B2
公开(公告)日：2023-04-25
申请号：US17464449
申请日：2021-09-01
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Seungjune Jeon , Juane Li , Ning Chen
Abstract: A request to program host data to a memory device of a memory sub-system is received. Redundancy metadata associated with the host data is generated. A determination is made, in view of the received request, whether the host data is valid data or invalid data. In response to a determination that the host data is invalid data, updated redundancy metadata associated with the host data is generated. The updated redundancy metadata indicates that the host data is invalid data. The host data and the updated redundancy metadata is programmed to the memory device.
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公开(公告)号：US11625295B2
公开(公告)日：2023-04-11
申请号：US17302676
申请日：2021-05-10
Applicant: Micron Technology, Inc.
Inventor： Seungjune Jeon , Zhenming Zhou , Jiangli Zhu
Abstract: A memory device is set to a performance mode. Data item is received. The data item in a page of a logical unit of the memory device associated with a fault tolerant stripe is stored. A redundancy metadata update for the fault tolerant stripe is delayed until a subsequent media management operation.
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公开(公告)号：US20230067738A1
公开(公告)日：2023-03-02
申请号：US17464449
申请日：2021-09-01
Applicant: MICRON TECHNOLOGY, INC.
Inventor： Seungjune Jeon , Juane Li , Ning Chen
IPC: G06F11/10
Abstract: A request to program host data to a memory device of a memory sub-system is received. Redundancy metadata associated with the host data is generated. A determination is made, in view of the received request, whether the host data is valid data or invalid data. In response to a determination that the host data is invalid data, updated redundancy metadata associated with the host data is generated. The updated redundancy metadata indicates that the host data is invalid data. The host data and the updated redundancy metadata is programmed to the memory device.
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公开(公告)号：US11561729B2
公开(公告)日：2023-01-24
申请号：US16997426
申请日：2020-08-19
Applicant: Micron Technology, Inc.
Inventor： Seungjune Jeon , Jiangli Zhu
IPC: G06F3/06
Abstract: A method includes performing a memory operation to access memory cells of a memory sub-system. The method can further include determining, for the memory operation, a quantity of memory cells available to be accessed during the performance of the memory operation. The method can further include determining that a quantity of memory cells that are accessed during the performance of the memory operation comprises fewer than the quantity of memory cells available to be accessed. The method can further include incrementing a counter in response to the determination that the quantity of memory cells accessed is fewer than the quantity of memory cells available to be accessed.
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公开(公告)号：US20230017981A1
公开(公告)日：2023-01-19
申请号：US17951593
申请日：2022-09-23
Applicant: Micron Technology, Inc.
Inventor： Seungjune Jeon , Zhenming Zhou , Zhenlei Shen
Abstract: A request to read data at the memory device is received. A first read operation is performed to read the data at the memory device using a first read threshold voltage. The data read at the memory device using the first read threshold voltage is determined to be associated with a first unsuccessful correction of an error. Responsive to determining that the data read at the memory device using the first read threshold voltage is associated with the first unsuccessful correction of the error, a second read threshold voltage is stored at a register to replace a preread threshold voltage previously stored at the register that is associated with the memory device. The first preread threshold voltage was previously used to perform a preread operation at the memory device. A second read operation to read the data at the memory device is performed using the second read threshold voltage.
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