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18 条记录 (耗时 0.034 秒)

    3C-SiC nanowhisker
    12.
    发明授权
    3C-SiC nanowhisker 失效
    3C-SiC纳米晶须

    公开(公告)号：US07521034B2

    公开(公告)日：2009-04-21

    申请号：US11648569

    申请日：2007-01-03

    申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    IPC分类号： C01B31/36

    CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

    摘要： 3C-SiC nanowhisker and a method of synthesizing 3C-SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C-SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particles (3), 3C-SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

    摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。 该方法安全，成本低，晶须可以发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间 由氢和烃组成的等离子体。 Si衬底（1）中的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持 直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。

    3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker
    13.
    发明授权
    3C-SIC nanowhisker and synthesizing method and 3C-SIC nanowhisker 失效
    3C-SIC纳米晶须及其合成方法和3C-SIC纳米晶须

    公开(公告)号：US07364714B2

    公开(公告)日：2008-04-29

    申请号：US10481578

    申请日：2002-06-21

    申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    IPC分类号： C01B31/36

    CPC分类号： B82Y30/00 ,  C01B32/956 ,  C01P2002/72 ,  C01P2002/80 ,  C01P2004/04 ,  C01P2004/16 ,  C01P2004/51 ,  C01P2004/64 ,  C30B11/00 ,  C30B25/005 ,  C30B25/105 ,  C30B29/36 ,  C30B29/605 ,  C30B29/62 ,  Y10S423/10 ,  Y10T428/259 ,  Y10T428/2993

    摘要： 3C—SiC nanowhisker and a method of synthesizing 3C—SiC nanowhisker wherein its diameter and length can be controlled. The method is safe and low cost, and the whisker can emit visible light of various wavelengths. 3C—SiC nanowhisker is formed by depositing thin film (2) made of a metal element on Si substrate (1), placing this Si substrate (1) into a plasma CVD apparatus, and holding it for predetermined time at predetermined substrate temperature in the plasma consisting of hydrogen and hydrocarbon. Si of Si substrate (1) and C in plasma dissolve at supersaturation into metal liquid particle (3), 3C—SiC nanowhisker (4) grows on the metal liquid particles (3), whisker surface is terminated with H so as to maintain the diameter constant, and the metal liquid particles (3) at whisker root take in Si from Si substrate (1) and penetrate into Si substrate (1).

    摘要翻译： 3C-SiC纳米晶须及其可以控制其直径和长度的3C-SiC纳米晶须的合成方法。 该方法安全，成本低，晶须可以发出各种波长的可见光。 通过在Si衬底（1）上沉积由金属元素制成的薄膜（2）来形成3C-SiC纳米晶须，将该Si衬底（1）放置在等离子体CVD装置中，并在预定的衬底温度下将其保持在预定时间 由氢和烃组成的等离子体。 Si衬底（1）的Si和等离子体中的C在过饱和时溶解成金属液体颗粒（3），3C-SiC纳米晶须（4）在金属液体颗粒（3）上生长，晶须表面用H终止，以保持 直径常数，晶须根部的金属液体颗粒（3）从Si基板（1）吸收Si并渗入Si基板（1）。

    Method of and apparatus for synthesizing highly oriented, aligned carbon nanotubes from an organic liquid
    17.
    发明授权
    Method of and apparatus for synthesizing highly oriented, aligned carbon nanotubes from an organic liquid 有权
    从有机液体合成高定向取向碳纳米管的方法和装置

    公开(公告)号：US08893645B2

    公开(公告)日：2014-11-25

    申请号：US12385184

    申请日：2009-04-01

    申请人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    发明人： Toshihiro Ando ,  Mika Gamo ,  Yafei Zhang

    IPC分类号： B05C3/00 ,  B01J8/00 ,  C01B31/02 ,  B01J10/00 ,  B82Y40/00 ,  B82Y30/00

    CPC分类号： B82Y30/00 ,  B01J10/007 ,  B01J2219/00094 ,  B01J2219/0013 ,  B01J2219/00263 ,  B01J2219/0884 ,  B01J2219/0894 ,  B82Y40/00 ,  C01B32/162 ,  C01B32/166 ,  C01B2202/08 ,  Y10S977/844

    摘要： An apparatus for synthesizing highly oriented, aligned carbon nanotubes from an alcohol includes a liquid tank for retaining an alcohol; a water cooling device for cooling the liquid tank from its outside; a condensing device for cooling and condensing vapor from the alcohol; a substrate holding device having an electrode for passing an electric current through the substrate in the alcohol; an inert gas inlet for removing air; a tank sealing device to prevent the alcohol becoming gaseous in phase; and a temperature measuring device, wherein the Si substrate with a buildup thereon of the thin film or insular particles is heated by electric current to a temperature, thereby providing a temperature gradient from the Si substrate surface toward the alcohol, wherein said thin film or insular particles is a catalyst for synthesizing carbon nanotubes, and the carbon nanotubes are synthesized.

    摘要翻译： 用于从醇中合成高定向取向的碳纳米管的装置包括用于保持醇的液体罐; 用于从其外部冷却液体罐的水冷装置; 用于冷却和冷凝来自酒精的蒸气的冷凝装置; 具有使电流通过所述基材中的电极的基板保持装置; 用于除去空气的惰性气体入口; 用于防止酒精相变成气态的罐密封装置; 以及温度测量装置，其中将其上堆积有薄膜或岛状颗粒的Si衬底通过电流加热到一个温度，从而提供从Si衬底表面朝向醇的温度梯度，其中所述薄膜或岛状 颗粒是用于合成碳纳米管的催化剂，并且合成碳纳米管。

    Control method of arranging carbon nanotubes selectively orientationally on the surface of a substrate
    18.
    发明申请
    Control method of arranging carbon nanotubes selectively orientationally on the surface of a substrate 审中-公开
    在基板的表面上选择性地排列碳纳米管的控制方法

    公开(公告)号：US20050181143A1

    公开(公告)日：2005-08-18

    申请号：US10509881

    申请日：2003-03-17

    申请人： Yafei Zhang ,  Yinzhong Guo ,  Dong Xu

    发明人： Yafei Zhang ,  Yinzhong Guo ,  Dong Xu

    IPC分类号： C01B31/02 ,  B05D3/00

    CPC分类号： B82Y30/00 ,  B82Y40/00 ,  C01B32/15 ,  C01B2202/08

    摘要： The control method of arranging carbon nanotubes selectively orientationally on the surface of a substrate relates to the field of nano-technology. The invention includes: a) treating the solid substrate to be hydrophilic or hydrophobic; b) attaching the organic macromolecular with hydrophilic and hydrophobic end to the surface of the purified carbon nanotubes, and dissolving those carbon nanotubes into water or a solvent; c) spreading the above solution onto the surface of water in sub-phase by controlling the surface pressure-area isotherm of the carbon nanotube film on the water surface after volatilization of water or the organic solvent; d) transferring the formed carbon nanotube film to the above treated solid substrate surface to form the arrangement layer of the carbon nanotubes. This invention possesses substantial characteristics and notable improvement. The present invention can control the arrangement direction of the carbon nanotubes and can successively remove organic molecule.

    摘要翻译： 在衬底表面上选择性地排列碳纳米管的控制方法涉及纳米技术领域。 本发明包括：a）将固体基质处理成亲水或疏水; b）将具有亲水和疏水末端的有机高分子连接到纯化碳纳米管的表面，并将这些碳纳米管溶解在水或溶剂中; c）通过控制水或有机溶剂挥发后水表面上碳纳米管膜的表面压力面积等温线，将上述溶液分散在水相表面上; d）将形成的碳纳米管膜转移到上述经处理的固体基材表面上以形成碳纳米管的排列层。 本发明具有显着的特点和显着的改进。 本发明可以控制碳纳米管的布置方向，并可以连续地去除有机分子。