公开(公告)号：US20210005974A1

公开(公告)日：2021-01-07

申请号：US16703872

申请日：2019-12-05

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Jian-Long Ruan ,  Shyh-Jer Huang ,  Yang-Kuo Kuo

IPC: H01Q15/00 ,  H01Q23/00 ,  H01Q1/42

Abstract: The present invention provides a switching component of a directly flat-attached active frequency selective surface (AFSS) and fabricating method thereof. The present invention utilizes P-type and N-type thin film materials to fabricate a PN diode switching component capable of adjusting a resonance frequency of the AFSS, such that the AFSS together with the switching component could be integrally fabricated into a single thin film. Therefore, by utilizing a stepwise coating method to fabricate each layer with corresponding material, an equivalent length of a metal pattern could be adjusted, thereby changing the resonance frequency of the AFSS.

公开(公告)号：US10060036B2

公开(公告)日：2018-08-28

申请号：US14959285

申请日：2015-12-04

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Chun-Te Wu ,  Yang-Kuo Kuo

IPC: B21D39/00 ,  C23C28/02

CPC classification number: C23C28/023 ,  C23C28/021

Abstract: A yellow light photolithographic process and an electroplating process are performed multiple times to produce copper plated layers on the aluminum nitride (AlN) substrate. The copper plated layers are plated in sequence into a stack structure with each layer having reduced length. The parameters of the yellow light photolithographic process can be adjusted, such that each copper plated layer is formed horizontally for a predetermined length into a stack structure of step layers tapering off upward, while a predetermined angle is formed by the tangent line passing through edges of the respective step layers, and the surface of the AlN substrate. An adhesion layer, a copper seed layer, a first copper plated layer, a second copper plated layer, a third copper plated layer, and a nickel plated layer are formed in sequence on the AlN substrate, to form a metalized circuit of multi-layer stack.

公开(公告)号：US20160148917A1

公开(公告)日：2016-05-26

申请号：US15011515

申请日：2016-01-30

Applicant: National Chung-Shan Institute of Science and Technology

Inventor： Yang-Kuo Kuo ,  Chia-Yi Hsiang ,  Hung-Tai Ku

IPC: H01L25/16 ,  H01L33/64 ,  H01L35/02

CPC classification number: H01L25/167 ,  F25B21/02 ,  H01L25/162 ,  H01L33/642 ,  H01L35/02 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A cooling device for electronic components is a combination of substrate (aluminum nitride substrate—thermoelectric elements—aluminum nitride substrate) and utilizing the temperature difference generated by two top and bottom ends of the cooling device to effectively remove the heat generated by the electronic components. This cooling device not only can effectively reduce temperature of the electronic components, but also store the power generated through its thermoelectric effect.

Abstract translation: 电子部件的冷却装置是基板（氮化铝基板 - 热电元件 - 氮化铝基板）的组合，并且利用由冷却装置的两个顶端和底端产生的温差来有效地去除由电子部件产生的热量。 该冷却装置不仅能够有效地降低电子部件的温度，还可以存储通过其热电效应产生的电力。