公开(公告)号：US07732305B2

公开(公告)日：2010-06-08

申请号：US11494903

申请日：2006-07-28

申请人： Zhiyuan Ye ,  Yihwan Kim ,  Xiaowei Li ,  Ali Zojaji ,  Nicholas C. Dalida ,  Jinsong Tang ,  Xiao Chen ,  Arkadii V. Samoilov

发明人： Zhiyuan Ye ,  Yihwan Kim ,  Xiaowei Li ,  Ali Zojaji ,  Nicholas C. Dalida ,  Jinsong Tang ,  Xiao Chen ,  Arkadii V. Samoilov

IPC分类号： H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

摘要翻译： 在第一方面中，提供了在基板上形成外延膜的方法。 该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。 提供了许多其他方面。

公开(公告)号：US07732269B2

公开(公告)日：2010-06-08

申请号：US11742932

申请日：2007-05-01

申请人： Yihwan Kim ,  Majeed A. Foad ,  Yonah Cho ,  Zhiyuan Ye ,  Ali Zojaji ,  Errol Sanchez

发明人： Yihwan Kim ,  Majeed A. Foad ,  Yonah Cho ,  Zhiyuan Ye ,  Ali Zojaji ,  Errol Sanchez

IPC分类号： H01L21/336 ,  H01L21/8234

CPC分类号： H01L29/7848 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02664 ,  H01L21/2233 ,  H01L21/26513 ,  H01L29/165 ,  H01L29/66287 ,  H01L29/6656 ,  H01L29/66628 ,  H01L29/66636

摘要： A method for forming an ultra shallow junction on a substrate is provided. In certain embodiments a method of forming an ultra shallow junction on a substrate is provided. The substrate is placed into a process chamber. A silicon carbon layer is deposited on the substrate. The silicon carbon layer is exposed to a dopant. The substrate is heated to a temperature greater than 950° C. so as to cause substantial annealing of the dopant within the silicon carbon layer. In certain embodiments the substrate is heated to a temperature between about 1000° C. and about 1100°. In certain embodiments the substrate is heated to a temperature between about 1030° C. and 1050° C. In certain embodiments, a structure having an abrupt p-n junction is provided.

摘要翻译： 提供了一种在基板上形成超浅结的方法。 在某些实施例中，提供了在衬底上形成超浅结的方法。 将基底放置在处理室中。 硅基层沉积在基底上。 硅碳层暴露于掺杂剂。 将基板加热至大于950℃的温度，以使硅碳层内的掺杂剂发生实际退火。 在某些实施方案中，将基材加热至约1000℃至约1100℃之间的温度。 在某些实施方案中，将衬底加热至约1030℃至1050℃之间的温度。在某些实施方案中，提供具有突变p-n结的结构。

公开(公告)号：US20110230036A1

公开(公告)日：2011-09-22

申请号：US13149865

申请日：2011-05-31

申请人： Zhiyuan Ye ,  Yihwan Kim ,  Xiaowei Li ,  Ali Zojaji ,  Nicholas C. Dalida ,  Jinsong Tang ,  Xiao Chen ,  Arkadii V. Samoilov

发明人： Zhiyuan Ye ,  Yihwan Kim ,  Xiaowei Li ,  Ali Zojaji ,  Nicholas C. Dalida ,  Jinsong Tang ,  Xiao Chen ,  Arkadii V. Samoilov

IPC分类号： H01L21/20

CPC分类号： H01L21/02639 ,  H01L21/02381 ,  H01L21/02447 ,  H01L21/0245 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262

摘要： In a first aspect, a method of forming an epitaxial film on a substrate is provided. The method includes (a) providing a substrate; (b) exposing the substrate to a silicon source and a carbon source so as to form a carbon-containing silicon epitaxial film; (c) encapsulating the carbon-containing silicon epitaxial film with an encapsulating film; and (d) exposing the substrate to Cl2 so as to etch the encapsulating film. Numerous other aspects are provided.

摘要翻译： 在第一方面中，提供了在基板上形成外延膜的方法。 该方法包括（a）提供衬底; （b）将衬底暴露于硅源和碳源以形成含碳硅外延膜; （c）用封装膜封装含碳硅外延膜; 和（d）将衬底暴露于Cl2以蚀刻封装膜。 提供了许多其他方面。

公开(公告)号：US20080022924A1

公开(公告)日：2008-01-31

申请号：US11831055

申请日：2007-07-31

申请人： Yihwan Kim ,  Zhiyuan Ye ,  Ali Zojaji

发明人： Yihwan Kim ,  Zhiyuan Ye ,  Ali Zojaji

IPC分类号： C30B25/02

CPC分类号： C30B25/02 ,  C30B29/06

摘要： In a first aspect, a method is provided for forming an epitaxial layer stack on a substrate. The method includes (1) selecting a target carbon concentration for the epitaxial layer stack; (2) forming a carbon-containing silicon layer on the substrate, the carbon-containing silicon layer having at least one of an initial carbon concentration, a thickness and a deposition time selected based on the selected target carbon concentration; and (3) forming a non-carbon-containing silicon layer on the carbon-containing silicon layer prior to etching. Numerous other aspects are provided.

摘要翻译： 在第一方面，提供了一种在衬底上形成外延层堆叠的方法。 该方法包括（1）选择外延层堆叠的目标碳浓度; （2）在基板上形成含碳硅层，所述含碳硅层具有基于所选择的目标碳浓度选择的初始碳浓度，厚度和沉积时间中的至少一种; 和（3）在蚀刻之前在含碳硅层上形成非碳的硅层。 提供了许多其他方面。

公开(公告)号：US07651948B2

公开(公告)日：2010-01-26

申请号：US11480134

申请日：2006-06-30

申请人： Yihwan Kim ,  Jean R. Vatus ,  Lori D. Washington ,  Arkadii Samoilov ,  Ali Zojaji

发明人： Yihwan Kim ,  Jean R. Vatus ,  Lori D. Washington ,  Arkadii Samoilov ,  Ali Zojaji

IPC分类号： H01L21/302

CPC分类号： C23C16/0236 ,  C30B25/02 ,  C30B29/52

摘要： A method for processing a substrate including a pre-cleaning etch and reduced pressure process is disclosed. The pre-cleaning process involves introducing a substrate into a processing chamber; flowing an etching gas into the processing chamber; processing at least a portion of the substrate with the etching gas to remove a contaminated or damaged layer from a substrate surface; stopping flow of the etching gas; evacuating the processing chamber to achieve a reduced pressure in the chamber; and processing the substrate surface at the reduced pressure. Epitaxial deposition is then used to form an epitaxial layer on the substrate surface.

摘要翻译： 公开了一种用于处理包括预清洗蚀刻和减压工艺的衬底的方法。 预清洗过程包括将衬底引入处理室; 使蚀刻气体流入处理室; 用蚀刻气体处理至少一部分基板以从基板表面去除污染或损坏的层; 停止蚀刻气体的流动; 排空处理室以在室中实现减压; 并在减压下处理衬底表面。 然后使用外延沉积在衬底表面上形成外延层。

公开(公告)号：US20070010033A1

公开(公告)日：2007-01-11

申请号：US11178973

申请日：2005-07-11

申请人： Wolfgang Aderhold ,  Ali Zojaji

发明人： Wolfgang Aderhold ,  Ali Zojaji

IPC分类号： H01L21/66 ,  H01L21/20

CPC分类号： C23C16/52 ,  C30B23/02 ,  C30B25/02 ,  C30B25/165 ,  Y10T117/10

摘要： A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.

公开(公告)号：US08445389B2

公开(公告)日：2013-05-21

申请号：US13346503

申请日：2012-01-09

申请人： Ali Zojaji ,  Arkadii V. Samoilov

发明人： Ali Zojaji ,  Arkadii V. Samoilov

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02019 ,  B08B7/0035 ,  H01L21/02046 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/3065 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814

摘要： Embodiments of the invention generally relate to methods for treating a silicon-containing material on a substrate surface and performing a chamber clean process. In one embodiment, a method includes positioning a substrate containing a silicon material having a contaminant thereon within a process chamber and exposing the substrate to an etching gas containing chlorine gas and a silicon source gas while removing the contaminant and maintaining a temperature of the substrate within a range from about 500° C. to less than about 800° C. during an etching process. The method further includes exposing the substrate to a deposition gas after the etching process during a deposition process and exposing the process chamber to a chamber clean gas containing chlorine gas and the silicon source gas after the deposition process during a chamber clean process. The chamber clean process limits the etching of quartz and metal surfaces within the process chamber.

摘要翻译： 本发明的实施方案一般涉及在基材表面处理含硅材料并进行室清洁工艺的方法。 在一个实施例中，一种方法包括将含有其上具有污染物的硅材料的衬底定位在处理室内，并将衬底暴露于含有氯气和硅源气体的蚀刻气体，同时除去污染物并保持衬底的温度 在蚀刻过程中约500℃至小于约800℃的范围。 该方法还包括在沉积工艺期间在蚀刻工艺之后将衬底暴露于沉积气体，并且在室清洁过程中在沉积过程之后将处理室暴露于含有氯气的室清洁气体和沉积工艺之后的硅源气体。 室清洁过程限制了处理室内的石英和金属表面的蚀刻。

公开(公告)号：US08093154B2

公开(公告)日：2012-01-10

申请号：US11242613

申请日：2005-10-03

申请人： Ali Zojaji ,  Arkadii V. Samoilov

发明人： Ali Zojaji ,  Arkadii V. Samoilov

IPC分类号： H01L21/302 ,  H01L21/461

CPC分类号： H01L21/02019 ,  B08B7/0035 ,  H01L21/02046 ,  H01L21/02057 ,  H01L21/02381 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02658 ,  H01L21/3065 ,  H01L21/823425 ,  H01L21/823807 ,  H01L21/823814

摘要： In one embodiment of the invention, a method for finishing or treating a silicon-containing surface is provided which includes removing contaminants and/or smoothing the surface contained on the surface by a slow etch process (e.g., about 100 Å/min) is provided which includes removing silicon-containing material to form a recess in a source/drain (S/D) area on the substrate. In another embodiment, a method for cleaning a process chamber is provided which includes exposing the interior surfaces with a chamber clean gas that contains an etchant and a silicon source. The chamber clean process limits the etching of quartz and metal surfaces within the process chamber.

摘要翻译： 在本发明的一个实施方案中，提供了一种用于整理或处理含硅表面的方法，其包括通过缓蚀刻工艺（例如，约/ 100 / min）去除污染物和/或平滑表面上所含的表面。 含硅表面暴露于含有蚀刻剂和硅源的蚀刻气体。 优选地，蚀刻剂是氯气，使得在该过程中使用相对低的温度（例如<800℃）。 在另一个实施例中，提供了一种用于在快速蚀刻工艺（例如约> 100 / min）期间蚀刻含硅表面的方法，其包括去除含硅材料以在源极/漏极（S / D）中形成凹陷 ）面积。 在另一个实施例中，提供了一种用于清洁处理室的方法，其包括用包含蚀刻剂和硅源的室清洁气体暴露内表面。 室清洁过程限制了处理室内的石英和金属表面的蚀刻。

公开(公告)号：US07598178B2

公开(公告)日：2009-10-06

申请号：US11690588

申请日：2007-03-23

申请人： Arkadii V. Samoilov ,  Rohini Kodali ,  Ali Zojaji ,  Yihwan Kim

发明人： Arkadii V. Samoilov ,  Rohini Kodali ,  Ali Zojaji ,  Yihwan Kim

IPC分类号： H01L21/336 ,  H01L21/302

CPC分类号： H01L21/32134 ,  C30B25/02 ,  C30B29/06 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/0262 ,  H01L21/02636 ,  H01L29/66272 ,  H01L29/6656 ,  H01L29/66636 ,  H01L29/732 ,  H01L29/7834

摘要： The present invention provides systems and methods of forming an epitaxial film on a substrate. After heating in a process chamber, the substrate is exposed to a silicon source and at least one of SiH2(CH3)2, SiH(CH3)3, Si(CH3)4, 1,3-disilabutane, and C2H2, at a temperature of greater than about 250 degrees Celsius and a pressure greater than about 1 Torr so as to form an epitaxial film on at least a portion of the substrate. Then, the substrate is exposed to an etchant so as to etch the epitaxial film and any other films formed during the deposition. The deposition and etching may be repeated until a film of a desired thickness is achieved. Numerous other aspects are disclosed.

摘要翻译： 本发明提供了在衬底上形成外延膜的系统和方法。 在处理室中加热后，将衬底暴露于硅源和SiH2（CH3）2，SiH（CH3）3，Si（CH3）4,1,3-二硅烷和C2H2中的至少一种，温度 大于约250摄氏度，压力大于约1托，以便在至少一部分基底上形成外延膜。 然后，将衬底暴露于蚀刻剂，以蚀刻外延膜和沉积期间形成的任何其它膜。 可以重复沉积和蚀刻，直到达到所需厚度的膜。 公开了许多其他方面。

公开(公告)号：US20070128780A1

公开(公告)日：2007-06-07

申请号：US11671375

申请日：2007-02-05

申请人： Wolfgang Aderhold ,  Ali Zojaji

发明人： Wolfgang Aderhold ,  Ali Zojaji

IPC分类号： H01L21/338 ,  C30B11/00

CPC分类号： C23C16/52 ,  C30B23/02 ,  C30B25/02 ,  C30B25/165 ,  Y10T117/10

摘要： A method of calculating a process parameter for a deposition of an epitaxial layer on a substrate. The method includes the steps of measuring an effect of the process parameter on a thickness of the epitaxial layer to determine a gain curve for the process parameter, and calculating, using the gain curve, a value for the process parameter to achieve a target thickness of the epitaxial layer. The value is calculated to minimize deviations from the target thickness in the layer. Also, a substrate processing system comprising that includes a processor to calculate a value for the process parameter to achieve a substantially uniform epitaxial layer of a target thickness on the substrate, where the value is calculated using a gain curve derived from measurements of layer uniformity as a function of the value of the process parameter.

摘要翻译： 计算用于在衬底上沉积外延层的工艺参数的方法。 该方法包括以下步骤：测量工艺参数对外延层的厚度的影响，以确定工艺参数的增益曲线，以及使用增益曲线计算工艺参数的值以实现目标厚度 外延层。 计算该值以最小化与层中目标厚度的偏差。 而且，一种衬底处理系统，包括一个处理器，用于计算工艺参数的值，以在衬底上实现目标厚度的基本上均匀的外延层，其中使用从均匀度测量得到的增益曲线来计算该值 过程参数值的函数。