公开(公告)号：US4952839A

公开(公告)日：1990-08-28

申请号：US420773

申请日：1989-10-12

申请人： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

发明人： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC分类号： H01J29/45

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

公开(公告)号：US4888521A

公开(公告)日：1989-12-19

申请号：US69156

申请日：1987-07-02

申请人： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

发明人： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC分类号： H01J29/45 ,  H01J31/38

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。

公开(公告)号：US4445131A

公开(公告)日：1984-04-24

申请号：US319796

申请日：1981-11-09

申请人： Yasuhiko Nonaka ,  Keiichi Shidara ,  Naohiro Goto

发明人： Yasuhiko Nonaka ,  Keiichi Shidara ,  Naohiro Goto

IPC分类号： H01J29/45 ,  H01L27/146 ,  H01L31/08 ,  H01L31/101 ,  H01L27/14

CPC分类号： H01J29/456 ,  H01L27/14665 ,  H01L31/101

摘要： A photoconductive image pick-up tube target comprising an N-type semiconductor film formed on a transparent substrate, and a P-type photoconductive film in rectifying contact with the N-type semiconductor film and containing Se and As and also Te as sensitizers. A layer of said P-type photoconductive film between the N-type semiconductor film and a Te-containing layer of the P-type photoconductive film has an As concentration distribution which is lower on the side of the N-type conductive film and higher on the side of the Te-containing layer.

摘要翻译： 包含形成在透明基板上的N型半导体膜的光导图像拾取管靶和与N型半导体膜整流接触并包含Se和As的P型光电导膜以及Te作为敏化剂。 在N型半导体膜和P型光电导膜的Te含有层之间的所述P型光电导膜层的As浓度分布在N型导电膜侧较低，高于 含Te层的一侧。

公开(公告)号：US4307319A

公开(公告)日：1981-12-22

申请号：US921948

申请日：1978-07-05

申请人： Motoyasu Terao ,  Tadaaki Hirai ,  Eiichi Maruyama ,  Hideaki Yamamoto ,  Tsutomu Fujita ,  Naohiro Goto ,  Keiichi Shidara

发明人： Motoyasu Terao ,  Tadaaki Hirai ,  Eiichi Maruyama ,  Hideaki Yamamoto ,  Tsutomu Fujita ,  Naohiro Goto ,  Keiichi Shidara

IPC分类号： H01J29/45 ,  H01L31/08

CPC分类号： H01J29/451

摘要： A photoelectric device comprises a signal electrode, a layer of amorphous photoconductor containing 50 atomic percent or more of selenium and an N-type semiconductor layer made of a material selected from the group consisting of oxygen depletion type cerium oxide and oxygen depletion type lead oxide and disposed therebetween, which has a thickness greater than 8 nm and up to and including 500 nm and a Fermi level located within an energy range of 0.2 to 0.8 eV from the bottom of a conduction band.

摘要翻译： 光电装置包括信号电极，含有50原子％以上的硒的非晶质感光体层和由选自氧耗尽型氧化铈和氧耗尽型氧化铅的材料制成的N型半导体层，以及 其间具有大于8nm的厚度并且包括500nm的厚度以及从导带的底部位于0.2至0.8eV的能量范围内的费米能级。

公开(公告)号：US5233265A

公开(公告)日：1993-08-03

申请号：US561678

申请日：1990-08-01

申请人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi ,  Mitsuo Kosugi ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yoshizumi Ikeda ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Hirofumi Ogawa

发明人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi ,  Mitsuo Kosugi ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yoshizumi Ikeda ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Hirofumi Ogawa

IPC分类号： H01J29/45 ,  H01L31/0376 ,  H01L31/09 ,  H01L31/107 ,  H01L31/20

CPC分类号： H01J29/456 ,  H01L31/03765 ,  H01L31/095 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。 在本发明的一个方面，非晶半导体层是非晶态Se。 在本发明的另一方面，非晶半导体层主要由至少包含氢或卤素元素的四面体元素组成。 当使用主要由四面体元素组成的非晶半导体层时，电荷倍增效应主要在非晶半导体的内部产生，因此可以获得具有高灵敏度的热稳定的光电导器件，同时保持良好的光响应。

公开(公告)号：US4866332A

公开(公告)日：1989-09-12

申请号：US16403

申请日：1987-02-19

申请人： Yukio Takasaki ,  Tatsuo Makishima ,  Kazutaka Tsuji ,  Tadaaki Hirai ,  Eisuke Inoue ,  Yasuhiko Nonaka ,  Naohiro Goto ,  Masanao Yamamoto ,  Keiichi Shidara ,  Kenkichi Tanioka ,  Takashi Yamashita ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shirou Suzuki ,  Masaaki Aiba

发明人： Yukio Takasaki ,  Tatsuo Makishima ,  Kazutaka Tsuji ,  Tadaaki Hirai ,  Eisuke Inoue ,  Yasuhiko Nonaka ,  Naohiro Goto ,  Masanao Yamamoto ,  Keiichi Shidara ,  Kenkichi Tanioka ,  Takashi Yamashita ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shirou Suzuki ,  Masaaki Aiba

IPC分类号： H01J29/45

CPC分类号： H01J29/456

摘要： A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.

摘要翻译： 具有透明基板，透明导电膜，主要由非晶形Se形成的p型光电导膜的图像拾取管的目标和能够在与p型交联的界面处形成整流接触的n型导电膜， 使用整流接触作为反向偏压，其特征在于，所述p型光电导膜至少含有在膜厚度方向上具有大于35％的区域和至少60重量％的Te，至少 至少含有0.005〜5重量％的能够在膜厚度方向上形成非晶态Se的浅层的材料的区域即使在高温下操作也具有良好的后图像特性。

公开(公告)号：US4330733A

公开(公告)日：1982-05-18

申请号：US152291

申请日：1980-05-22

申请人： Keiichi Shidara ,  Naohiro Goto ,  Tatsuro Kawamura ,  Eikyu Hiruma ,  Yohitsumu Ikeda ,  Kenkichi Tanioka ,  Tadaaki Hirai ,  Yukio Takasaki ,  Chushirou Kusano ,  Tsuyoshi Uda ,  Yasuhiko Nonaka

发明人： Keiichi Shidara ,  Naohiro Goto ,  Tatsuro Kawamura ,  Eikyu Hiruma ,  Yohitsumu Ikeda ,  Kenkichi Tanioka ,  Tadaaki Hirai ,  Yukio Takasaki ,  Chushirou Kusano ,  Tsuyoshi Uda ,  Yasuhiko Nonaka

IPC分类号： H01J29/45 ,  H01L31/0264 ,  H01L31/0272 ,  H01L31/08 ,  H01J31/38

CPC分类号： H01L31/02725 ,  H01J29/45

摘要： A photoconductive target having an electrode and a P-type conductive layer mainly made of Se and making rectifying contact at an interface with the electrode, with at least Te being doped in a portion of the P-type conductive layer. At least one metal fluoride forming shallow levels is doped in the region where the signal current is generated for the most part of the P-type conductive layer with an average concentration of not less than 50 ppm and not more than 5% by weight. The metal fluoride is preferably at least one selected from the group consisting of LiF, NaF, MgF.sub.2, CaF.sub.2, BaF.sub.2, AlF.sub.3, CrF.sub.3, MnF.sub.2, CoF.sub.2, PbF.sub.2, CeF.sub.3 and TlF. The high light sticking of the photoconductive target can thus be considerably reduced.

摘要翻译： 一种光电导体，其具有主要由Se制成的电极和P型导电层，并在与电极的界面处进行整流接触，至少在P型导电层的一部分中掺杂有Te。 在大部分P型导电层产生信号电流的区域中掺杂有至少一种金属氟化物，平均浓度不低于50ppm且不超过5重量％。 金属氟化物优选为选自LiF，NaF，MgF 2，CaF 2，BaF 2，AlF 3，CrF 3，MnF 2，CoF 2，PbF 2，CeF 3和TlF中的至少一种。 因此可以显着地降低光导目标的高光粘附。