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公开(公告)号：US6139897A
公开(公告)日：2000-10-31
申请号：US251430
申请日：1999-02-17
申请人： Naohiro Goto , Tsutomu Nishide , Yukitaka Tanaka , Takuji Yasukawa , Kenji Masui
发明人： Naohiro Goto , Tsutomu Nishide , Yukitaka Tanaka , Takuji Yasukawa , Kenji Masui
IPC分类号： A21D2/14 , A21D2/16 , A23D7/005 , A23D7/01 , A23D9/007 , A23D9/013 , A23G1/36 , A23G3/34 , A23G9/32 , A23L1/217 , A23L1/24 , A23L1/30 , A23L1/314 , A23L2/52 , A23D9/07
CPC分类号： A23L2/52 , A21D2/14 , A21D2/16 , A23D7/0053 , A23D7/0056 , A23D7/011 , A23D7/013 , A23D9/007 , A23D9/013 , A23G1/36 , A23G3/346 , A23G9/327 , A23L13/43 , A23L19/18 , A23L27/60 , A23L33/11 , A23L33/115 , A23G2200/04 , A23G2200/08 , A23V2002/00
摘要： An oil or fat composition comprising an oil or fat comprising 15 wt. % or more of a diacylglycerol and 1.2 to 20 wt. % of phytosterol, dissolved or dispersed in the fat and oil is provided here, which can be used in the same way as usual oil and fat in daily life to reduce a hemal cholesterol value of a person having a high value of cholesterol and to raise no problem in appearance, taste, heating cooking and the like in comparison with usual edible oil and fat.
摘要翻译： 一种油或脂肪组合物，其包含油或脂肪，其包含15wt。 二酰基甘油的％以上，1.2〜20重量％ 这里提供溶解或分散在脂肪和油中的植物甾醇的百分比，其可以以与日常生活中的通常的油和脂肪相同的方式使用，以降低具有高胆固醇值的人的血液中的胆固醇值并提高 与通常的食用油脂相比，外观，味道，加热烹饪等没有问题。
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公开(公告)号：US6025348A
公开(公告)日：2000-02-15
申请号：US69754
申请日：1998-04-30
摘要： An oil/fat composition is provided which lowers the blood cholesterol level of a person having a high cholesterol level when used in daily life similarly to ordinary fats and is usable without posing any problem concerning appearance, flavor, heat cooking, etc. as compared with generally edible fats, wherein the oil/fat composition contains a phytosterol contained in an oil/fat containing one or more polyhydric alcohol/fatty acid esters each having a degree of esterification of 2 or higher and containing at least one hydroxyl group remaining unesterified.
摘要翻译： 提供油/脂肪组合物，其与普通脂肪类似地在日常生活中降低具有高胆固醇水平的人的血液胆固醇水平，并且与外观，风味，加热烹饪等相比可以使用，而不会出现与外观，风味，加热烹饪等相关的问题 通常可食用脂肪，其中所述油/脂肪组合物含有含有一种或多种酯化度为2以上且至少含有至少一个羟基保持未酯化的多元醇/脂肪酸酯的油/脂肪中含有的植物甾醇。
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公开(公告)号：US4277515A
公开(公告)日：1981-07-07
申请号：US083565
申请日：1979-10-11
申请人： Yasuhiko Nonaka , Naohiro Goto , Keiichi Shidara
发明人： Yasuhiko Nonaka , Naohiro Goto , Keiichi Shidara
CPC分类号： H01J29/456 , H01J9/233
摘要： The target comprises a transparent substrate, an N-type transparent conductive film formed on the substrate, a P-type photoconductive film formed on the N-type conductive film and a heterojunction formed at the interface between the N- and P-type films. The P-type photoconductive film contains selenium, tellurium and arsenic of which selenium and arsenic are distributed continuously from the heterojunction throughout the thickness of the P-type photoconductive film whereas the distribution of tellurium is spaced from the heterojunction and localized in the vicinity of the heterojunction. The total amount of arsenic contained in the P-type photoconductive film ranges from 2.5 to 6% by weight.
摘要翻译： 目标包括透明基板，形成在基板上的N型透明导电膜，形成在N型导电膜上的P型光电导膜和在N型和P型膜之间的界面处形成的异质结。 P型光电导膜含有硒，碲和砷，其中硒和砷在P型光电导膜的整个厚度上从异质结连续分布，而碲的分布与异质结隔开并且位于 异质结。 P型光电导膜中含有的砷的总量为2.5〜6重量％。
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公开(公告)号：US4219831A
公开(公告)日：1980-08-26
申请号：US846881
申请日：1977-10-31
申请人： Yasuhiko Nonaka , Naohiro Goto , Keiichi Shidara
发明人： Yasuhiko Nonaka , Naohiro Goto , Keiichi Shidara
CPC分类号： H01J29/456 , H01J9/233
摘要： The target comprises a transparent substrate, an N-type transparent conductive film formed on the substrate, a P-type photoconductive film formed on the N-type conductive film and a heterojunction formed at the interface between the N- and P-type films. The P-type photoconductive film contains selenium, tellurium and arsenic of which selenium and arsenic are distributed continuously from the heterojunction throughout the thickness of the P-type photoconductive film whereas the distribution of tellurium is spaced from the heterojunction and localized in the vicinity of the heterojunction. The total amount of arsenic contained in the P-type photoconductive film ranges from 2.5 to 6% by weight.
摘要翻译： 目标包括透明基板，形成在基板上的N型透明导电膜，形成在N型导电膜上的P型光电导膜和在N型和P型膜之间的界面处形成的异质结。 P型光电导膜含有硒，碲和砷，其中硒和砷在P型光电导膜的整个厚度上从异质结连续分布，而碲的分布与异质结隔开并且位于 异质结。 P型光电导膜中含有的砷的总量为2.5〜6重量％。
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公开(公告)号：US4040985A
公开(公告)日：1977-08-09
申请号：US674086
申请日：1976-04-06
IPC分类号： H01J29/45 , H01L31/0248 , H01L31/00
CPC分类号： H01J29/456 , Y10T428/31678
摘要： A photoconductive film comprises a first region containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively, a second region disposed on the first region and containing Se in which Te is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, a third region disposed on the second region and containing Se in which an element capable of forming deep levels in Se is added with a continuous distribution of concentration having a peak value greater than 15 atomic % inclusive, and a fourth region disposed on the third region and containing Se in which Te and an element capable of forming deep levels in Se are added at concentrations lower than 10 atomic % inclusive on average, respectively.
摘要翻译： 光电导膜包括含有Se的第一区域，其中Te和能够形成Se的深度水平的元素分别平均加入低于10原子％的平均值，第二区域设置在第一区域上并包含Se，其中 加入具有峰值大于15原子％的浓度的连续分布的浓度，第三区域设置在第二区域上，并且包含Se，其中能够形成Se中的深层次的元素具有连续的浓度分布 具有大于15原子％的峰值的第一区域，以及设置在第三区域上并且含有Se的Se的第四区域，其中Te和Se中能够形成深度水平的元素分别以低于10原子％ 。
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公开(公告)号：US4007395A
公开(公告)日：1977-02-08
申请号：US580473
申请日：1975-05-23
申请人： Yasuhiko Nonaka , Naohiro Goto , Keiichi Shidara
发明人： Yasuhiko Nonaka , Naohiro Goto , Keiichi Shidara
CPC分类号： H01J29/456 , H01J9/233
摘要： In a method of manufacturing a target structure for use in a photoconductive image pickup tube when depositing a P-type photoconductive film on an N-type transparent conductive film deposited on one side of a transparent substrate which acts as an incident window of the image pickup tube, the P-type photoconductive film is made up of first and second photoconductive substances. The commencement of the deposition of the first photoconductive substance is delayed a predetermined time than that of the second photoconductive substance and the deposition of the first photoconductive substance is terminated before completion of the deposition of the second photoconductive material thereby forming a layer of the first photoconductive substance not contiguous to the junction between the N-type transparent conductive film and the P-type photoconductive film and having a predetermined thickness.
摘要翻译： 在制造用于感光图像拾取管中的目标结构的方法中，当将P型光电导膜沉积在作为图像拾取器的入射窗口的透明基板的一侧上沉积的N型透明导电膜上时 P型光电导膜由第一和第二光电导物质组成。 第一光电导物质的沉积的开始被延迟比第二光电导物质的预定时间，并且在完成第二光电导材料的沉积之前终止第一光电导物质的沉积，从而形成第一光电导层 物质不与N型透明导电膜和P型光电导膜之间的接合点相邻并且具有预定厚度。
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公开(公告)号：US3941672A
公开(公告)日：1976-03-02
申请号：US450186
申请日：1974-03-11
申请人： Yasuo Tanaka , Hideaki Yamamoto , Keiko Ooki , Naohiro Goto , Toru Takigawa
发明人： Yasuo Tanaka , Hideaki Yamamoto , Keiko Ooki , Naohiro Goto , Toru Takigawa
CPC分类号： H01L21/00 , H01J29/456 , H01J9/20 , H01J9/233 , H01L31/00
摘要： A method of manufacturing a light sensitive heterodiode comprising an n-type transparent conductive layer and a p-type photoconductive layer provided thereon and forming rectifying contact therewith, in which before providing the p-type photoconductive layer on the n-type transparent conductive layer the surface of the latter is smoothed down by mechanical polishing or by bombarding it with ions accelerated by discharge.
摘要翻译： 一种制造光敏异质二极管的方法，其包括设置在其上的n型透明导电层和p型光电导层，并与其形成整流接触，其中在n型透明导电层上提供p型光电导层之前 后者的表面通过机械抛光或通过放电加速的离子轰击来平滑。
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8.发明授权
公开(公告)号：US4007473A
公开(公告)日：1977-02-08
申请号：US580539
申请日：1975-05-23
申请人： Yasuhiko Nonaka , Tadaaki Hirai , Naohiro Goto , Keiichi Shidara
发明人： Yasuhiko Nonaka , Tadaaki Hirai , Naohiro Goto , Keiichi Shidara
CPC分类号： H01J29/456 , Y10S148/063 , Y10S148/072 , Y10S148/12 , Y10S148/15
摘要： In a target structure for use in a photoconductive image pickup tube, a P-type photoconductive film is deposited on an N-type transparent conductive film which is deposited on a transparent substrate. The P-type photosensitive film comprises first and second photoconductive substances. The commencement of the deposition of the first photoconductive substance is delayed a predetermined time from that of the second photoconductive substance thereby forming a film of the first photoconductive substance which is not contiguous to the junction surface between the N-type transparent conductive film and the P-type photoconductive film.
摘要翻译： 在用于光电导图像拾取管的目标结构中，P型光电导膜沉积在沉积在透明衬底上的N型透明导电膜上。 P型感光膜包含第一和第二光电导物质。 开始第一光电导物质的沉积比第二光电导物质的延迟预定时间，从而形成第一光电导物质的膜，其不与N型透明导电膜和P型结合面之间的接合面邻接 型感光膜。
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9.发明授权
公开(公告)号：US3984722A
公开(公告)日：1976-10-05
申请号：US469760
申请日：1974-05-14
申请人： Eiichi Maruyama , Hiroaki Hachino , Yasushi Saitoh , Tadaaki Hirai , Naohiro Goto , Yukinao Isozaki , Keiichi Shidara , Saiichi Koizumi
发明人： Eiichi Maruyama , Hiroaki Hachino , Yasushi Saitoh , Tadaaki Hirai , Naohiro Goto , Yukinao Isozaki , Keiichi Shidara , Saiichi Koizumi
IPC分类号： H01J29/45 , H01L31/08 , H01L31/109 , H01J31/38
CPC分类号： H01L31/109 , H01J29/456 , H01J9/233
摘要： An image pickup tube target wherein a rectifying contact which is formed at a boundary of a first layer of a material selected from the group consisting of tin oxide, indium oxide, titanium oxide, cadmium sulfide, zinc sulfide, cadmium selenide, zinc selenide, n-type germanium, n-type silicon and mixture thereof, and a second layer of a material mainly consisting of selenium and including halogen, is reversely biased and operated at a region where signal current is saturated with respect to applied voltage. The second layer of the material includes 50 atomic percent or more of selenium and 0.1 - 1000 atomic ppm of halogen. More preferably, the second layer comprises 3-20 atomic % of arsenic, 0.1-20 atomic ppm of iodine and balance mainly consisting of selenium.
摘要翻译： 一种图像拾取管目标，其中形成在选自氧化锡，氧化铟，氧化钛，硫化镉，硫化锌，硒化镉，硒化锌，氮化镍的材料的第一层的边界处的整流接触 型锗，n型硅及其混合物，以及主要由硒组成并包括卤素的材料的第二层反向偏置并在信号电流相对于施加电压饱和的区域操作。 材料的第二层包括50原子％或更多的硒和0.1-1000原子ppm的卤素。 更优选地，第二层包含3-20原子％的砷，0.1-20原子ppm的碘，余量主要由硒组成。
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公开(公告)号：US4952839A
公开(公告)日：1990-08-28
申请号：US420773
申请日：1989-10-12
申请人： Kenkichi Tanioka , Mitsuo Kosugi , Junichi Yamazaki , Keiichi Shidara , Kazuhisa Taketoshi , Tatsuro Kawamura , Eikyuu Hiruma , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yochizumi Ikeda , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
发明人： Kenkichi Tanioka , Mitsuo Kosugi , Junichi Yamazaki , Keiichi Shidara , Kazuhisa Taketoshi , Tatsuro Kawamura , Eikyuu Hiruma , Shiro Suzuki , Takashi Yamashita , Masaaki Aiba , Yochizumi Ikeda , Tadaaki Hirai , Yukio Takasaki , Sachio Ishioka , Tatsuo Makishima , Kenji Sameshima , Tsuyoshi Uda , Naohiro Goto , Yasuhiko Nonaka , Eisuke Inoue , Kazutaka Tsuji , Hirofumi Ogawa
IPC分类号： H01J29/45
CPC分类号： H01J29/456
摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.
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