公开(公告)号：US4866332A

公开(公告)日：1989-09-12

申请号：US16403

申请日：1987-02-19

申请人： Yukio Takasaki ,  Tatsuo Makishima ,  Kazutaka Tsuji ,  Tadaaki Hirai ,  Eisuke Inoue ,  Yasuhiko Nonaka ,  Naohiro Goto ,  Masanao Yamamoto ,  Keiichi Shidara ,  Kenkichi Tanioka ,  Takashi Yamashita ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shirou Suzuki ,  Masaaki Aiba

发明人： Yukio Takasaki ,  Tatsuo Makishima ,  Kazutaka Tsuji ,  Tadaaki Hirai ,  Eisuke Inoue ,  Yasuhiko Nonaka ,  Naohiro Goto ,  Masanao Yamamoto ,  Keiichi Shidara ,  Kenkichi Tanioka ,  Takashi Yamashita ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shirou Suzuki ,  Masaaki Aiba

IPC分类号： H01J29/45

CPC分类号： H01J29/456

摘要： A target of an image pickup tube, having a transparent substrate, a transparent conductive film, a p-type photoconductive film made mainly from amorphous Se, and an n-type conductive film capable of forming a rectifying contact at the interface with the p-type photoconductive film, using the rectifying contact as a reverse bias, characterized in that the p-type photoconductive film containing at least a region having more than 35%, and to 60% by weight of Te in the film thickness direction, and at least a region containing 0.005 to 5% by weight of at least a material capable of forming shallow levels in the amorphous Se in the film thickness direction, has good after-image characteristics even if operated at a high temperature.

摘要翻译： 具有透明基板，透明导电膜，主要由非晶形Se形成的p型光电导膜的图像拾取管的目标和能够在与p型交联的界面处形成整流接触的n型导电膜， 使用整流接触作为反向偏压，其特征在于，所述p型光电导膜至少含有在膜厚度方向上具有大于35％的区域和至少60重量％的Te，至少 至少含有0.005〜5重量％的能够在膜厚度方向上形成非晶态Se的浅层的材料的区域即使在高温下操作也具有良好的后图像特性。

公开(公告)号：US4952839A

公开(公告)日：1990-08-28

申请号：US420773

申请日：1989-10-12

申请人： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

发明人： Kenkichi Tanioka ,  Mitsuo Kosugi ,  Junichi Yamazaki ,  Keiichi Shidara ,  Kazuhisa Taketoshi ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yochizumi Ikeda ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC分类号： H01J29/45

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

公开(公告)号：US4888521A

公开(公告)日：1989-12-19

申请号：US69156

申请日：1987-07-02

申请人： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

发明人： Kenkichi Tanioka ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Junichi Yamazaki ,  Eikyuu Hiruma ,  Kazuhisa Taketoshi ,  Shiro Suzuki ,  Takashi Yamashita ,  Mitsuo Kosugi ,  Yochizumi Ikeda ,  Masaaki Aiba ,  Tadaaki Hirai ,  Yukio Takasaki ,  Sachio Ishioka ,  Tatsuo Makishima ,  Kenji Sameshima ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Kazutaka Tsuji ,  Hirofumi Ogawa

IPC分类号： H01J29/45 ,  H01J31/38

CPC分类号： H01J29/456

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property.

摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。

公开(公告)号：US5233265A

公开(公告)日：1993-08-03

申请号：US561678

申请日：1990-08-01

申请人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi ,  Mitsuo Kosugi ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yoshizumi Ikeda ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Hirofumi Ogawa

发明人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi ,  Mitsuo Kosugi ,  Shiro Suzuki ,  Takashi Yamashita ,  Masaaki Aiba ,  Yoshizumi Ikeda ,  Tsuyoshi Uda ,  Naohiro Goto ,  Yasuhiko Nonaka ,  Eisuke Inoue ,  Hirofumi Ogawa

IPC分类号： H01J29/45 ,  H01L31/0376 ,  H01L31/09 ,  H01L31/107 ,  H01L31/20

CPC分类号： H01J29/456 ,  H01L31/03765 ,  H01L31/095 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoconductive device having a photoconductive layer which includes an amorphous semiconductor layer capable of charge multiplication in at least a part thereof is disclosed. The method of operating such a photoconductive device is also disclosed. By using the avalanche effect of the amorphous semiconductor layer, it is possible to realize a highly sensitive photoconductive device while maintaining low lag property. In one aspect of the present invention, the amorphous semiconductor layer is amorphous Se. In another aspect of the present invention, the amorphous semiconductor layer is composed mainly of tetrahedral elements including at least an element of hydrogen or halogens. When using the amorphous semiconductor layer composed mainly of tetrahedral elements, the charge multiplication effect is produced mainly in the interior of the amorphous semiconductor, and thus it is possible to obtain a thermally stable photoconductive device having a high sensitivity while keeping a good photoresponse.

摘要翻译： 公开了一种具有光电导层的光电导器件，该光电导层包括至少部分能够进行电荷倍增的非​​晶半导体层。 还公开了操作这种光电导器件的方法。 通过使用非晶半导体层的雪崩效应，可以实现高灵敏度的感光器件，同时保持低滞后特性。 在本发明的一个方面，非晶半导体层是非晶态Se。 在本发明的另一方面，非晶半导体层主要由至少包含氢或卤素元素的四面体元素组成。 当使用主要由四面体元素组成的非晶半导体层时，电荷倍增效应主要在非晶半导体的内部产生，因此可以获得具有高灵敏度的热稳定的光电导器件，同时保持良好的光响应。

公开(公告)号：US4900975A

公开(公告)日：1990-02-13

申请号：US67229

申请日：1987-06-29

申请人： Yasuharu Shimomoto ,  Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Hirokazu Matsubara ,  Kenji Sameshima ,  Junichi Yamazaki ,  Kenkichi Tanioka ,  Mitsuo Kosugi ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Takashi Yamashita

发明人： Yasuharu Shimomoto ,  Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Hirokazu Matsubara ,  Kenji Sameshima ,  Junichi Yamazaki ,  Kenkichi Tanioka ,  Mitsuo Kosugi ,  Keiichi Shidara ,  Tatsuro Kawamura ,  Eikyuu Hiruma ,  Takashi Yamashita

IPC分类号： H01L31/08 ,  H01J29/45 ,  H01J31/38

CPC分类号： H01J29/456

摘要： A target of an image pickup tube is formed by laminating at least a transparent conductive film, an amorphous layer consisting essentially of silicon, and an amorphous layer consisting essentially of selenium in the above order on a light-transmitting substrate.

摘要翻译： 图像拾取管的目标是通过在透光性基板上层叠至少透明导电膜，基本上由硅构成的非晶层和基本上由硒组成的非晶层。

公开(公告)号：US5101255A

公开(公告)日：1992-03-31

申请号：US384080

申请日：1989-07-24

申请人： Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

发明人： Sachio Ishioka ,  Yukio Takasaki ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Yasuhiko Nonaka ,  Tatsuro Kawamura ,  Takashi Yamashita ,  Kazuhisa Taketoshi ,  Keiichi Shidara ,  Fumihiko Ando ,  Kenkichi Tanioka

IPC分类号： H01L31/0272 ,  H01L31/09

CPC分类号： H01L31/0272 ,  H01L31/095

摘要： Disclosed is a photoelectric conversion device which comprises: a photoconductive layer made of amorphous semiconductor material which shows charge multiplication and which converts photo signals into electric signals; and a substrate having electric circuits or the like (for example switching elements) for reading the electric signals. The amorphous semiconductor material used according to the invention shows the charge multiplication action under predetermined intensity of electric field so that a high sensitive photoelectric conversion device having a gain which is not smaller than 1 is realized.

摘要翻译： 公开了一种光电转换装置，其包括：由非晶半导体材料制成的光电导层，其显示电荷倍增，并将光信号转换为电信号; 以及具有用于读取电信号的电路等的基板（例如开关元件）。 根据本发明使用的非晶半导体材料在预定的电场强度下显示充电倍增动作，从而实现具有不小于1的增益的高灵敏度光电转换装置。

公开(公告)号：US4980736A

公开(公告)日：1990-12-25

申请号：US155809

申请日：1988-02-16

申请人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi

发明人： Yukio Takasaki ,  Kazutaka Tsuji ,  Tatsuo Makishima ,  Tadaaki Hirai ,  Sachio Ishioka ,  Tatsuro Kawamura ,  Keiichi Shidara ,  Eikyu Hiruma ,  Kenkichi Tanioka ,  Junichi Yamazaki ,  Kenji Sameshima ,  Hirokazu Matsubara ,  Kazuhisa Taketoshi

IPC分类号： H01L31/0376 ,  H01L31/09 ,  H01L31/107 ,  H01L31/20

CPC分类号： H01L31/095 ,  H01L31/03765 ,  H01L31/107 ,  H01L31/204 ,  Y02E10/548 ,  Y02P70/521

摘要： A photoelectric conversion device using an amorphous material composed mainly of tetrahedral elements including at least an element of hydrogen and halogens as semiconductor material is disclosed. When a strong electric field is applied to a layer formed by using this amorphous semiconductor, a charge multiplication effect is produced mainly in the interior of the amorphous semiconductor and thus it is possible to obtain a thermally stable photoelectric conversion device having a high sensitivity while keeping a good photoresponse.

公开(公告)号：US4884011A

公开(公告)日：1989-11-28

申请号：US143384

申请日：1988-01-13

申请人： Tatsuo Makishima ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Sachio Ishioka ,  Takashi Yamashita ,  Keiichi Shidara ,  Junichi Yamazaki ,  Masaaki Aiba

发明人： Tatsuo Makishima ,  Tadaaki Hirai ,  Kazutaka Tsuji ,  Sachio Ishioka ,  Takashi Yamashita ,  Keiichi Shidara ,  Junichi Yamazaki ,  Masaaki Aiba

IPC分类号： H01J31/38 ,  H01J29/45 ,  H01L31/0272 ,  H04N5/228

CPC分类号： H01L31/0272 ,  H01J29/456

摘要： A light-detecting device for converting a light to an electrical signal utilizes a charge multiplication function and has a stable gain.The light-detecting device comprises a photo-electric conversion unit for converting a measurement light to an electrical signal, a power supply for applying an electric field to the photo-electric conversion unit, a light source for applying an incident light to the photo-electric conversion unit, signal detection means for detecting the charge converted by the photo-electric conversion unit based on the incident light from the light source, and signal hold means for holding the output signal of the signal detection means at a predetermined level.

摘要翻译： 用于将光转换为电信号的光检测装置利用电荷倍增函数并具有稳定的增益。 光检测装置包括用于将测量光转换为电信号的光电转换单元，向光电转换单元施加电场的电源，用于将入射光施加到光电转换单元的光源， 电转换单元，用于基于来自光源的入射光检测由光电转换单元转换的电荷的信号检测装置，以及用于将信号检测装置的输出信号保持在预定水平的信号保持装置。

公开(公告)号：US5488386A

公开(公告)日：1996-01-30

申请号：US160655

申请日：1993-12-02

申请人： Toshio Yamagishi ,  Masakazu Nanba ,  Norifumi Egami ,  Kenkichi Tanioka ,  Mitsuhiro Kurashige ,  Kazutaka Tsuji ,  Yoshiyuki Kaneko ,  Tatsuo Makishima ,  Kazuyuki Nagatsuma ,  Tetsuya Ohshima ,  Yasushi Nakano

发明人： Toshio Yamagishi ,  Masakazu Nanba ,  Norifumi Egami ,  Kenkichi Tanioka ,  Mitsuhiro Kurashige ,  Kazutaka Tsuji ,  Yoshiyuki Kaneko ,  Tatsuo Makishima ,  Kazuyuki Nagatsuma ,  Tetsuya Ohshima ,  Yasushi Nakano

IPC分类号： H01J29/04 ,  H01J29/45 ,  H01J31/26 ,  H01J31/38 ,  H04N5/225 ,  H04N5/335 ,  H04N5/355 ,  H04N5/357 ,  H04N5/369 ,  H04N5/378 ,  G09G3/22

CPC分类号： H01J31/38 ,  H01J31/26

摘要： A photoconductive target having a transparent electrode layer and a photoconductive layer on a transparent substrate is disposed opposite to a group of integrated electron beam emitters having gate electrodes. A number of the electron emitters are activated to apply electron beams to the photoconductive target and the activated ones of the electron beam emitters are temporally changed over by an electron emitter selector circuit and a gate selector circuit. Signal charge generated and stored in the photoconductive layer is read. A time-series electric signal corresponding to a spatial distribution of the incident light is generated. A thin imaging apparatus suitable for a larger area is thus provided.

摘要翻译： 在透明基板上具有透明电极层和光电导层的光导体靶设置成与具有栅电极的一组集成电子束发射体相对。 多个电子发射器被激活以将电子束施加到光电导目标上，并且激活的电子束发射器在时间上被电子发射极选择器电路和栅选择器电路切换。 读取产生并存储在光电导层中的信号电荷。 产生对应于入射光的空间分布的时间序列电信号。 因此，提供了适合于较大面积的薄的成像装置。

公开(公告)号：US5070272A

公开(公告)日：1991-12-03

申请号：US547226

申请日：1990-07-03

申请人： Takeshi Kikawa ,  Kazutaka Tsuji ,  Kenji Sameshima ,  Tadaaki Hirai ,  Junichi Yamazaki ,  Misao Kubota ,  Keiichi Shidara

发明人： Takeshi Kikawa ,  Kazutaka Tsuji ,  Kenji Sameshima ,  Tadaaki Hirai ,  Junichi Yamazaki ,  Misao Kubota ,  Keiichi Shidara

IPC分类号： H01J31/38 ,  H01J29/45 ,  H01J29/86 ,  H01J29/88 ,  H01L27/146 ,  H01L31/024 ,  H01L31/0272 ,  H01L31/0392 ,  H01L31/09

CPC分类号： H01L31/0392 ,  H01J29/45 ,  H01L31/024 ,  H01L31/0272 ,  H01L31/09 ,  Y02E10/50

摘要： A photoconductive device having a transparent substrate, a transparent conductive film, a photoconductive film and a layer of an insulator provided on at least part of the substrate and of high thermal conductivity, and a method of operating the photoconductive device. Thus, especially, the temperature of a photoconductive film of an imaging device typical of an image pick-up tube or the photoconductive device which may be a one- or a two-dimensional image sensor or a photocell can be controlled precisely and efficiently.