AMBIPOLAR TRANSISTOR DESIGN
    13.
    发明申请
    AMBIPOLAR TRANSISTOR DESIGN 有权
    双极晶体管设计

    公开(公告)号:US20080246095A1

    公开(公告)日:2008-10-09

    申请号:US11697604

    申请日:2007-04-06

    IPC分类号: H01L29/78 H01L51/40

    摘要: An ambipolar transistor, including a p-type semiconductor region and an n-type semiconductor region near the p-type semiconductor region. Also a first terminal and second terminal contact both the p-type semiconductor region and the n-type semiconductor region. Furthermore, the p-type semiconductor region and the n-type semiconductor region substantially do not overlap each other. A method of manufacturing an ambipolar transistor is also disclosed, including forming a p-type semiconductor region, forming an n-type semiconductor region near the p-type semiconductor region, forming a first terminal contacting both the p-type semiconductor region and n-type semiconductor region, forming a second terminal contacting both the p-type semiconductor region and n-type semiconductor region; and wherein the p-type semiconductor region and the n-type semiconductor region substantially do not overlap, and have substantially no interfacial area.

    摘要翻译: 一种双极晶体管,包括p型半导体区域和p型半导体区域附近的n型半导体区域。 第一端子和第二端子也接触p型半导体区域和n型半导体区域。 此外,p型半导体区域和n型半导体区域基本上彼此不重叠。 还公开了制造双极晶体管的方法,包括形成p型半导体区域,在p型半导体区域附近形成n型半导体区域,形成与p型半导体区域和n型半导体区域接触的第一端子, 形成与p型半导体区域和n型半导体区域接触的第二端子; 并且其中p型半导体区域和n型半导体区域基本上不重叠,并且基本上没有界面面积。

    MEMORY DEVICE BASED ON CONDUCTANCE SWITCHING IN POLYMER/ELECTROLYTE JUNCTIONS
    15.
    发明申请
    MEMORY DEVICE BASED ON CONDUCTANCE SWITCHING IN POLYMER/ELECTROLYTE JUNCTIONS 有权
    基于在聚合物/电解质结中的导体开关的存储器件

    公开(公告)号:US20130182520A1

    公开(公告)日:2013-07-18

    申请号:US13352597

    申请日:2012-01-18

    IPC分类号: G11C7/00 H01L51/30

    摘要: A non-volatile memory device including at least a first electrode and a second electrode provided on a substrate, the first and second electrodes being separated from each other; an organic semiconductive polymer electrically connecting the first and second electrodes; an electrolyte in contact with the organic semiconductive polymer; and a third electrode that is not in contact with the first electrode, the second electrode, and the organic semiconductive polymer; wherein the organic semiconductive polymer has a first redox state in which it exhibits a first conductivity, and a second redox state in which it exhibits a second conductivity.

    摘要翻译: 一种非易失性存储器件,包括至少第一电极和设置在衬底上的第二电极,所述第一和第二电极彼此分离; 电连接第一和第二电极的有机半导体聚合物; 与有机半导体聚合物接触的电解质; 和不与第一电极,第二电极和有机半导体聚合物接触的第三电极; 其中所述有机半导体聚合物具有第一氧化还原状态,其中所述有机半导体聚合物呈现出第一导电性,并且具有第二氧化还原状态,其中所述有机半导体聚合物呈现

    METHOD OF FABRICATING HIGH-RESOLUTION FEATURES
    16.
    发明申请
    METHOD OF FABRICATING HIGH-RESOLUTION FEATURES 有权
    制作高分辨率特征的方法

    公开(公告)号:US20120279766A1

    公开(公告)日:2012-11-08

    申请号:US13102502

    申请日:2011-05-06

    申请人: Yiliang WU

    发明人: Yiliang WU

    IPC分类号: H05K1/09 H01B1/22 B44C1/17

    摘要: A method of forming a high resolution feature on a substrate, the method includes, depositing a liquid composition comprising a substance and a solvent onto the substrate to form deposited features, heating the deposited features to a heating temperature during or after the depositing to form an intermediate feature having a central region and an edge region, applying an adhesive substance to at least a portion of a surface of the intermediate feature, and removing the adhesive substance together with at least a portion of the central region of the intermediate feature to form the high resolution feature on the substrate.

    摘要翻译: 一种在衬底上形成高分辨率特征的方法,所述方法包括:将包含物质和溶剂的液体组合物沉积到所述衬底上以形成沉积的特征,在沉积期间或之后将沉积的特征加热至加热温度以形成 中间特征具有中心区域和边缘区域,将粘合物质施加到中间特征物的表面的至少一部分,以及与中间特征的中心区域的至少一部分一起去除粘合物质,以形成 基板上的高分辨率特征。

    LOW POLARITY NANOPARTICLE METAL PASTES FOR PRINTING APPLICATION
    17.
    发明申请
    LOW POLARITY NANOPARTICLE METAL PASTES FOR PRINTING APPLICATION 有权
    低极性纳米材料用于印刷应用的金属胶浆

    公开(公告)号:US20100239750A1

    公开(公告)日:2010-09-23

    申请号:US12408897

    申请日:2009-03-23

    CPC分类号: C09D11/52 C09D5/24

    摘要: A composition that may be used to form an electronic circuit element includes metal nanoparticles in a metal nanoparticle solution, at least a low-polarity additive and a solvent. The low-polarity additive is either a styrenated terpene resin or a polyterpene resin. The composition may be used to form conductive features on a substrate by depositing the composition onto a substrate, and heating the deposited composition on the substrate to a temperature from about 80° C. to about 200° C. to form conductive features on the substrate.

    摘要翻译: 可用于形成电子电路元件的组合物包括在金属纳米颗粒溶液中的金属纳米颗粒,至少一种低极性添加剂和溶剂。 低极性添加剂是苯乙烯萜烯树脂或多萜烯树脂。 该组合物可用于通过将组合物沉积在基底上而在基底上形成导电特征,并将基底上沉积的组合物加热至约80℃至约200℃的温度,以在基底上形成导电特征 。