摘要:
A method of forming conductive features on a substrate, the method comprising: providing two or more solutions, wherein a metal nanoparticle solution contains metal nanoparticles with a stabilizer and a destabilizer solution contains a destabilizer that destabilizes the stabilizer, liquid depositing the metal nanoparticle solution and the destabilizer solution onto the substrate, wherein during deposition or following the deposition of the metal nanoparticle solution onto the substrate, the metal nanoparticle and the destabilizer are combined with each other, destabilizing the stabilizer from the surface of the metal nanoparticles with the destabilizer and removing the stabilizer and destabilizer from the substrate by heating the substrate to a temperature below about 180° C. or by washing with the solvent
摘要:
A polymer semiconductor compound of the below formula, wherein the side chains, R1, R2, R3 and R4, are arranged in a manner that promotes high mobility and to provide a weak side chain interaction.
摘要:
A metal nanoparticle composition includes a thermally decomposable or UV decomposable stabilizer. A method of forming conductive features on a substrate, includes providing a solution containing metal nanoparticles with a stabilizer; and liquid depositing the solution onto the substrate, wherein during the deposition or following the deposition of the solution onto the substrate, decomposing and removing the stabilizer, by thermal treatment or by UV treatment, at a temperature below about 180° C. to form conductive features on the substrate.
摘要:
A method of forming a conductive ink silver features on a substrate by printing a silver compound solution and a hydrazine compound reducing agent solution on the surface of a substrate with a printhead. The silver compound solution and the hydrazine compound reducing agent solution are mixed just before, during, or following the printing of both solutions on the surface of the substrate, and the silver compound is then reduced to form conductive silver ink features on the substrate.
摘要:
Metal nanoparticles with a stabilizer complex of a carboxylic acid-amine on a surface thereof is formed by reducing a metal carboxylate in the presence of an organoamine and a reducing agent compound. The metal carboxylate may include a carboxyl group having at least four carbon atoms, and the amine may include an organo group having from 1 to about 20 carbon atoms.
摘要:
The development of air-stable unipolar n-type semiconductors with good solubility in organic solvents at room temperature remains a critical issue in the field of organic electronics. Moreover, most of the existing semiconducting materials exhibit LUMO energy levels higher than −4.0 eV, making electron transport sensitive to both moisture and oxygen. Bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are disclosed herein. More specifically, bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof for use in organic electronics are disclosed. A process for the preparation of bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide and derivatives is also disclosed. The bis(2-oxoindolin-3-ylidene)benzodifurandione dicyanide or derivatives thereof are characterized by high electron mobilities and are suitable for use as n-type semiconductors in organic electronics.
摘要:
A bimodal metal nanoparticle composition includes first metal nanoparticles having an average diameter of from about 50 nm to about 1000 nm, and second stabilized metal nanoparticles having an average diameter of from about 0.5 nm to about 20 nm, the second stabilized metal nanoparticles including metal cores having a stabilizer attached to the surfaces thereof, wherein the stabilizer is a substituted dithiocarbonate.
摘要:
The present invention discloses an organic semiconductor formulation comprising an organic semiconductor (OSC) and an organic phosphorous-containing additive (OPA) capable of enhancing the n-type performance of the organic semiconductor. The semiconductor formulation disclosed herein is suitable for producing n-type semiconductor thin films for use in a variety of electronic, optical, or optoelectronic devices such as organic thin film transistors, organic photovoltaics, and organic light emitting devices.