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公开(公告)号：US11874185B2
公开(公告)日：2024-01-16
申请号：US16764992
申请日：2018-11-16
申请人： NEXTINPUT, INC.
发明人： Julius Minglin Tsai , Dan Benjamin
摘要： Described herein is a force attenuator for a force sensor. The force attenuator can linearly attenuate the force applied on the force sensor and therefore significantly extend the maximum sensing range of the force sensor. The area ratio of the force attenuator to the force sensor determines the maximum load available in a linear fashion.
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公开(公告)号：US11808644B2
公开(公告)日：2023-11-07
申请号：US18081255
申请日：2022-12-14
申请人： NEXTINPUT, Inc.
CPC分类号： G01L1/16 , G01L1/18 , G01L5/0028 , B81B3/0072
摘要： Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
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13.发明授权公开(公告)号：US11609131B2
公开(公告)日：2023-03-21
申请号：US17591706
申请日：2022-02-03
申请人： NEXTINPUT, INC.
IPC分类号： G01L1/16 , G01L1/18 , H01L41/113
摘要： Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.
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公开(公告)号：US20210285832A1
公开(公告)日：2021-09-16
申请号：US17215186
申请日：2021-03-29
申请人： NextInput, Inc.
摘要： Described herein is a MEMS force sensor with stress concentration design. The stress concentration can be performed by providing slots, whether through or blind, and/or selective thinning of the substrate. The MEMS force sensor is in chip scale package with solder bumps or metal pillars and there are sensing elements formed on the sensor substrate at the stress concentrate area. The stress concentration can be realized through slots, selective thinning and a combination of both.
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公开(公告)号：US10962427B2
公开(公告)日：2021-03-30
申请号：US16739687
申请日：2020-01-10
申请人： NextInput, Inc.
摘要： Described herein is a MEMS force sensor with stress concentration design. The stress concentration can be performed by providing slots, whether through or blind, and/or selective thinning of the substrate. The MEMS force sensor is in chip scale package with solder bumps or metal pillars and there are sensing elements formed on the sensor substrate at the stress concentrate area. The stress concentration can be realized through slots, selective thinning and a combination of both.
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公开(公告)号：US20190383676A1
公开(公告)日：2019-12-19
申请号：US16485016
申请日：2018-02-09
申请人： NEXTINPUT, INC.
摘要： Described herein is a ruggedized wafer level microelectromechanical (“MEMS”) force sensor including a base and a cap. The MEMS force sensor includes a flexible membrane and a sensing element. The sensing element is electrically connected to integrated complementary metal-oxide-semiconductor (“CMOS”) circuitry provided on the same substrate as the sensing element. The CMOS circuitry can be configured to amplify, digitize, calibrate, store, and/or communicate force values through electrical terminals to external circuitry.
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公开(公告)号：US20240133755A1
公开(公告)日：2024-04-25
申请号：US18535230
申请日：2023-12-11
申请人： NextInput, Inc.
发明人： Julius Minglin Tsai , Dan Benjamin
CPC分类号： G01L1/2281 , G01L1/16 , G01L1/18
摘要： MEMS force sensors for providing temperature coefficient of offset (TCO) compensation are described herein. An example MEMS force sensor can include a TCO compensation layer to minimize the TCO of the force sensor. The bottom side of the force sensor can be electrically and mechanically mounted on a package substrate while the TCO compensation layer is disposed on the top side of the sensor. It is shown the TCO can be reduced to zero with the appropriate combination of Young's modulus, thickness, and/or thermal coefficient of expansion (TCE) of the TCO compensation layer.
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公开(公告)号：US11953380B2
公开(公告)日：2024-04-09
申请号：US17613222
申请日：2020-05-21
申请人： NEXTINPUT, INC.
CPC分类号： G01J5/20 , G01J5/0007 , G01J5/024 , G01J5/58
摘要： Described herein is a sensor in chip scale package form factor. For example, a non-vacuum packaged sensor chip described herein includes a substrate, and a sensing element arranged on the substrate. The sensing element is configured to change resistance with temperature. Additionally, the non-vacuum packaged sensor chip includes an absorbing layer configured to absorb middle infrared (“MIR”) radiation.
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19.发明授权公开(公告)号：US11946816B2
公开(公告)日：2024-04-02
申请号：US18117156
申请日：2023-03-03
申请人： NEXTINPUT, INC.
CPC分类号： G01L1/16 , G01L1/18 , H10N30/302
摘要： Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor. The sensor employs piezoresistive or piezoelectric sensing elements for force sensing where the force is converted to strain and converted to electrical signal. In one aspect, both the piezoresistive and the piezoelectric sensing elements are formed on one substrate and later bonded to another substrate on which the integrated circuitry is formed. In another aspect, the piezoelectric sensing element is formed on one substrate and later bonded to another substrate on which both the piezoresistive sensing element and the integrated circuitry are formed.
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公开(公告)号：US11604104B2
公开(公告)日：2023-03-14
申请号：US17591715
申请日：2022-02-03
申请人： NEXTINPUT, INC.
摘要： Described herein is a ruggedized microelectromechanical (“MEMS”) force sensor including both piezoresistive and piezoelectric sensing elements and integrated with complementary metal-oxide-semiconductor (“CMOS”) circuitry on the same chip. The sensor employs piezoresistive strain gauges for static force and piezoelectric strain gauges for dynamic changes in force. Both piezoresistive and piezoelectric sensing elements are electrically connected to integrated circuits provided on the same substrate as the sensing elements. The integrated circuits can be configured to amplify, digitize, calibrate, store, and/or communicate force values electrical terminals to external circuitry.
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