公开(公告)号：US20100015889A1

公开(公告)日：2010-01-21

申请号：US12311560

申请日：2007-10-05

申请人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

发明人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

IPC分类号： B24B49/04 ,  B24B49/12 ,  B24B37/04

CPC分类号： B24B49/04 ,  B24B37/013 ,  B24B49/12 ,  B24B49/16 ,  B24D7/12 ,  G01B11/0675 ,  G01N21/55 ,  G01N21/9501 ,  G05B19/406 ,  G05B19/4065 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

摘要翻译： 本发明涉及通过计算工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）的处理终点检测方法，例如 底物。 该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值 反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值 并且通过在工件的加工期间检测特征点来检测工件的加工终点。

公开(公告)号：US08554356B2

公开(公告)日：2013-10-08

申请号：US12311560

申请日：2007-10-05

申请人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

发明人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

IPC分类号： G06F19/00 ,  G01B11/00 ,  B24B49/00 ,  B24B51/00 ,  G05B19/406 ,  G05B19/4065 ,  G01B11/06 ,  B24B49/16 ,  B24B49/12

CPC分类号： B24B49/04 ,  B24B37/013 ,  B24B49/12 ,  B24B49/16 ,  B24D7/12 ,  G01B11/0675 ,  G01N21/55 ,  G01N21/9501 ,  G05B19/406 ,  G05B19/4065 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： A processing end point detection method detects a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

摘要翻译： 处理终点检测方法通过计算诸如基板的工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）。 该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值 反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值 并且通过在工件的加工期间检测特征点来检测工件的加工终点。

公开(公告)号：US08157616B2

公开(公告)日：2012-04-17

申请号：US12476427

申请日：2009-06-02

申请人： Noburu Shimizu ,  Shinrou Ohta

发明人： Noburu Shimizu ,  Shinrou Ohta

IPC分类号： B24B49/12

CPC分类号： B24B37/013 ,  B24B49/02 ,  B24B49/12

摘要： A method for detecting an end point of a polishing operation (e.g., a polishing stop point or a changing point of polishing conditions) of a film of a substrate is described. The method includes applying light to a surface of a substrate during polishing of the substrate; receiving reflected light from the surface of the substrate, monitoring a first characteristic value and a second characteristic value calculated from reflection intensities at different wavelengths; detecting a point when an extremal point of the first characteristic value and an extremal point of the second characteristic value appear within a predetermined time difference; after detecting the point, detecting a predetermined extremal point of the first characteristic value or the second characteristic value; and determining a polishing end point based on a point when the predetermined extremal point is detected.

摘要翻译： 描述了用于检测基板的膜的抛光操作的终点（例如抛光停止点或抛光条件的改变点）的方法。 该方法包括在衬底的抛光期间将光施加到衬底的表面; 从基板的表面接收反射光，监测由不同波长的反射强度计算的第一特征值和第二特征值; 当所述第一特征值的极值点和所述第二特征值的极值出现在预定时间差内时，检测点; 在检测到所述点之后，检测所述第一特征值或所述第二特征值的预定极值点; 以及基于当检测到所述预定极值点时的点来确定抛光终点。

公开(公告)号：US20090130956A1

公开(公告)日：2009-05-21

申请号：US12292453

申请日：2008-11-19

申请人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

发明人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

IPC分类号： B24B49/12 ,  B24B7/00

CPC分类号： B24B37/005 ,  B24B49/12 ,  B24B49/16 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

摘要： A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.

摘要翻译： 抛光装置可以抛光和除去额外的导电膜，同时防止腐蚀的发生而不降低生产量。 抛光装置包括：具有抛光表面的抛光台; 用于保持具有表面导电膜的工件的顶环，并将导电膜压靠在抛光表面上以抛光导电膜; 光传感器，用于通过向由顶环保持的工件的导电膜发射光，接收来自导电膜的反射光并测量反射光的反射率的变化来监测导电膜的抛光状态; 以及控制部，用于控制在抛光面上压入工件的压力。

公开(公告)号：US20060166503A1

公开(公告)日：2006-07-27

申请号：US10559815

申请日：2004-07-01

申请人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

发明人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

IPC分类号： B24B49/00 ,  H01L21/461 ,  B24B51/00

CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有接口（310），其被配置为输入形成在待抛光的基板上的膜的期望厚度;以及存储装置（308a），被配置为将抛光速率数据存储在其中的至少一个过去的基板上。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算基于抛光速率数据和期望厚度的抛光速率和最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

公开(公告)号：US6148463A

公开(公告)日：2000-11-21

申请号：US80453

申请日：1998-05-19

申请人： Noburu Shimizu ,  Koji Ato

发明人： Noburu Shimizu ,  Koji Ato

IPC分类号： B08B1/04 ,  B08B3/10 ,  H01L21/304 ,  B08B11/02 ,  A46B13/04

CPC分类号： B08B3/10 ,  B08B1/04

摘要： The cleaning apparatus of the present invention comprises a cleaning member 105 adapted to be rotated while maintaining contact with a surface of a semiconductor wafer W, to thereby clean the surface of the semiconductor wafer W, and a drive motor 50 for rotating the cleaning member 105. A linear bushing 75 and coil springs 81 are provided between the cleaning member 105 and the drive motor 50. The linear bushing 75 ensures that the cleaning member 105 is capable of slidably moving in a direction of an axis of rotation. The coil springs 81 ensure that the cleaning member 105 applies a predetermined pressure to the semiconductor wafer W. A pressure in a casing 1 [(1-1), (1-2) and (1-3)] is set to a negative pressure relative to an outside air pressure by suction through a pipe 111.

摘要翻译： 本发明的清洁装置包括：清洁部件105，其适于旋转，同时保持与半导体晶片W的表面的接触，从而清洁半导体晶片W的表面;以及驱动电机50，用于使清洁部件105旋转 线性衬套75和螺旋弹簧81设置在清洁构件105和驱动马达50之间。线性衬套75确保清洁构件105能够沿着旋转轴线的方向可滑动地移动。 螺旋弹簧81确保清洁构件105向半导体晶片W施加预定的压力。壳体1 [（1-1），（1-2）和（1-3）]中的压力被设置为负 通过管111的抽吸相对于外部空气压力的压力。

公开(公告)号：US4688989A

公开(公告)日：1987-08-25

申请号：US647150

申请日：1984-09-05

申请人： Hideki Kondo ,  Noburu Shimizu ,  Yoichi Kanemitsu

发明人： Hideki Kondo ,  Noburu Shimizu ,  Yoichi Kanemitsu

IPC分类号： F04D25/02 ,  F04D29/04 ,  F04D29/051 ,  F04D29/059 ,  F16C27/00 ,  F16C27/04 ,  F01D15/12

CPC分类号： F04D29/0513 ,  F04D25/02 ,  F04D29/059 ,  F04D29/668 ,  F16C27/04

摘要： A gas rotary machine of a type which is driven by a driving system with two parallel axes wherein a pinion shaft supporting a pinion is made as a flexible shaft and damper bearings including ball/roller bearings are employed to support the flexible shaft so that the whole machine is kept compact and the power required therefor is reduced.

摘要翻译： PCT No.PCT / JP84 / 00335 Sec。 371日期1984年9月5日第 102（e）1984年9月5日PCT PCT。1984年6月29日PCT公布。 公开号WO85 / 01328 日期：1985年3月28日。一种由具有两个平行轴线的驱动系统驱动的气体旋转机械，其中支撑小齿轮的小齿轮轴被制成柔性轴，并且采用包括滚珠/滚子轴承的阻尼器轴承来支撑 柔性轴使得整个机器保持紧凑并且所需的功率减小。

公开(公告)号：US20110306274A1

公开(公告)日：2011-12-15

申请号：US13216576

申请日：2011-08-24

申请人： Tatsuya SASAKI ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

发明人： Tatsuya SASAKI ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

IPC分类号： B24B49/00

CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有被配置为输入形成在待抛光的基板上的膜的期望厚度的接口（310）和被配置为在其中至少一个过去的基板上存储抛光速率数据的存储装置（308a）。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算抛光速率和基于抛光速率数据和期望厚度的最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

公开(公告)号：US07780503B2

公开(公告)日：2010-08-24

申请号：US12292453

申请日：2008-11-19

申请人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

发明人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

IPC分类号： B24B49/00

CPC分类号： B24B37/005 ,  B24B49/12 ,  B24B49/16 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

摘要： A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.

摘要翻译： 抛光装置可以抛光和除去额外的导电膜，同时防止腐蚀的发生而不降低生产量。 抛光装置包括：具有抛光表面的抛光台; 用于保持具有表面导电膜的工件的顶环，并且将导电膜压靠在抛光表面上以抛光导电膜; 光传感器，用于通过向由顶环保持的工件的导电膜发射光，接收来自导电膜的反射光并测量反射光的反射率的变化来监测导电膜的抛光状态; 以及控制部，用于控制在抛光面上压入工件的压力。

公开(公告)号：US20100093260A1

公开(公告)日：2010-04-15

申请号：US12461533

申请日：2009-08-14

申请人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta ,  Toshifumi Kimba ,  Masaki Kinoshita

发明人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta ,  Toshifumi Kimba ,  Masaki Kinoshita

IPC分类号： B24B49/12

CPC分类号： B24B49/12 ,  B24B37/013

摘要： A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time.

摘要翻译： 提供了一种制造用于选择光学抛光终点检测中的光的波长的图的方法。 该方法包括通过抛光垫抛光具有膜的基板的表面; 在基板的研磨过程中将光施加到基板的表面并接收来自基板的反射光; 计算各波长的反射光的相对反射率; 确定反射光的波长，其指示随抛光时间变化的相对反射率的局部最大点和局部最小点; 识别指示表示局部最大点和局部最小点的波长的时间点; 并且将由波长相对应的波长和时间点指定的坐标绘制到具有指示光的波长和抛光时间的坐标轴的坐标系上。