公开(公告)号：US08388408B2

公开(公告)日：2013-03-05

申请号：US12461533

申请日：2009-08-14

申请人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta

发明人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta

IPC分类号： B24B49/00 ,  B24B51/00

CPC分类号： B24B49/12 ,  B24B37/013

摘要： A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time.

摘要翻译： 提供了一种制造用于选择光学抛光终点检测中的光的波长的图的方法。 该方法包括通过抛光垫抛光具有膜的基板的表面; 在基板的研磨过程中将光施加到基板的表面并接收来自基板的反射光; 计算各波长的反射光的相对反射率; 确定反射光的波长，其指示随抛光时间变化的相对反射率的局部最大点和局部最小点; 识别指示表示局部最大点和局部最小点的波长的时间点; 并且将由波长相对应的波长和时间点指定的坐标绘制到具有指示光的波长和抛光时间的坐标轴的坐标系上。

公开(公告)号：US08157616B2

公开(公告)日：2012-04-17

申请号：US12476427

申请日：2009-06-02

申请人： Noburu Shimizu ,  Shinrou Ohta

发明人： Noburu Shimizu ,  Shinrou Ohta

IPC分类号： B24B49/12

CPC分类号： B24B37/013 ,  B24B49/02 ,  B24B49/12

摘要： A method for detecting an end point of a polishing operation (e.g., a polishing stop point or a changing point of polishing conditions) of a film of a substrate is described. The method includes applying light to a surface of a substrate during polishing of the substrate; receiving reflected light from the surface of the substrate, monitoring a first characteristic value and a second characteristic value calculated from reflection intensities at different wavelengths; detecting a point when an extremal point of the first characteristic value and an extremal point of the second characteristic value appear within a predetermined time difference; after detecting the point, detecting a predetermined extremal point of the first characteristic value or the second characteristic value; and determining a polishing end point based on a point when the predetermined extremal point is detected.

摘要翻译： 描述了用于检测基板的膜的抛光操作的终点（例如抛光停止点或抛光条件的改变点）的方法。 该方法包括在衬底的抛光期间将光施加到衬底的表面; 从基板的表面接收反射光，监测由不同波长的反射强度计算的第一特征值和第二特征值; 当所述第一特征值的极值点和所述第二特征值的极值出现在预定时间差内时，检测点; 在检测到所述点之后，检测所述第一特征值或所述第二特征值的预定极值点; 以及基于当检测到所述预定极值点时的点来确定抛光终点。

公开(公告)号：US20090130956A1

公开(公告)日：2009-05-21

申请号：US12292453

申请日：2008-11-19

申请人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

发明人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

IPC分类号： B24B49/12 ,  B24B7/00

CPC分类号： B24B37/005 ,  B24B49/12 ,  B24B49/16 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

摘要： A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.

摘要翻译： 抛光装置可以抛光和除去额外的导电膜，同时防止腐蚀的发生而不降低生产量。 抛光装置包括：具有抛光表面的抛光台; 用于保持具有表面导电膜的工件的顶环，并将导电膜压靠在抛光表面上以抛光导电膜; 光传感器，用于通过向由顶环保持的工件的导电膜发射光，接收来自导电膜的反射光并测量反射光的反射率的变化来监测导电膜的抛光状态; 以及控制部，用于控制在抛光面上压入工件的压力。

公开(公告)号：US07780503B2

公开(公告)日：2010-08-24

申请号：US12292453

申请日：2008-11-19

申请人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

发明人： Shinrou Ohta ,  Noburu Shimizu ,  Yoichi Kobayashi

IPC分类号： B24B49/00

CPC分类号： B24B37/005 ,  B24B49/12 ,  B24B49/16 ,  H01L21/3212 ,  H01L22/12 ,  H01L22/26

摘要： A polishing apparatus makes it possible to polish and remove an extra conductive film while preventing the occurrence of erosion and without lowering of the throughput. The polishing apparatus includes: a polishing table having a polishing surface; a top ring for holding a workpiece having a surface conductive film, and pressing the conductive film against the polishing surface to polish the conductive film; an optical sensor for monitoring the polishing state of the conductive film by emitting light toward the conductive film of the workpiece held by the top ring, receiving reflected light from the conductive film, and measuring a change in the reflectance of the reflected light; and a control section for controlling a pressure at which the workpiece is pressed on the polishing surface.

摘要翻译： 抛光装置可以抛光和除去额外的导电膜，同时防止腐蚀的发生而不降低生产量。 抛光装置包括：具有抛光表面的抛光台; 用于保持具有表面导电膜的工件的顶环，并且将导电膜压靠在抛光表面上以抛光导电膜; 光传感器，用于通过向由顶环保持的工件的导电膜发射光，接收来自导电膜的反射光并测量反射光的反射率的变化来监测导电膜的抛光状态; 以及控制部，用于控制在抛光面上压入工件的压力。

公开(公告)号：US20100093260A1

公开(公告)日：2010-04-15

申请号：US12461533

申请日：2009-08-14

申请人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta ,  Toshifumi Kimba ,  Masaki Kinoshita

发明人： Yoichi Kobayashi ,  Noburu Shimizu ,  Shinrou Ohta ,  Toshifumi Kimba ,  Masaki Kinoshita

IPC分类号： B24B49/12

CPC分类号： B24B49/12 ,  B24B37/013

摘要： A method of producing a diagram for use in selecting wavelengths of light in optical polishing end point detection is provided. The method includes polishing a surface of a substrate having a film by a polishing pad; applying light to the surface of the substrate and receiving reflected light from the substrate during the polishing of the substrate; calculating relative reflectances of the reflected light at respective wavelengths; determining wavelengths of the reflected light which indicate a local maximum point and a local minimum point of the relative reflectances which vary with a polishing time; identifying a point of time when the wavelengths, indicating the local maximum point and the local minimum point, are determined; and plotting coordinates, specified by the wavelengths and the point of time corresponding to the wavelengths, onto a coordinate system having coordinate axes indicating wavelength of the light and polishing time.

摘要翻译： 提供了一种制造用于选择光学抛光终点检测中的光的波长的图的方法。 该方法包括通过抛光垫抛光具有膜的基板的表面; 在基板的研磨过程中将光施加到基板的表面并接收来自基板的反射光; 计算各波长的反射光的相对反射率; 确定反射光的波长，其指示随抛光时间变化的相对反射率的局部最大点和局部最小点; 识别指示表示局部最大点和局部最小点的波长的时间点; 并且将由波长相对应的波长和时间点指定的坐标绘制到具有指示光的波长和抛光时间的坐标轴的坐标系上。

公开(公告)号：US07960188B2

公开(公告)日：2011-06-14

申请号：US12465024

申请日：2009-05-13

申请人： Shinrou Ohta ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

发明人： Shinrou Ohta ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

IPC分类号： H01L21/00 ,  H01L21/302 ,  G01R31/26

CPC分类号： H01L22/26 ,  H01L21/3212 ,  H01L21/67219 ,  H01L22/14

摘要： A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film. During the second polishing process and the third polishing process, a polishing state of the substrate is monitored with an eddy current sensor, and the third polishing process is terminated when an output signal of the eddy current sensor reaches a predetermined threshold.

摘要翻译： 描述了在其上抛光具有金属膜的基板的方法。 基板具有由金属膜的一部分形成的金属互连。 抛光方法包括进行第一抛光处理，在第一抛光处理之后，在第二抛光处理之后进行去除阻挡膜的第二抛光工艺，进行抛光绝缘膜的第三抛光工艺。 在第二抛光工艺和第三抛光工艺期间，用涡流传感器监测衬底的抛光状态，并且当涡流传感器的输出信号达到预定阈值时，第三抛光处理结束。

公开(公告)号：US20090286332A1

公开(公告)日：2009-11-19

申请号：US12465024

申请日：2009-05-13

申请人： Shinrou OHTA ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

发明人： Shinrou OHTA ,  Mitsuo Tada ,  Noburu Shimizu ,  Yoichi Kobayashi ,  Taro Takahashi ,  Eisaku Hayashi ,  Hiromitsu Watanabe ,  Tatsuya Kohama ,  Itsuki Kobata

IPC分类号： H01L21/66

CPC分类号： H01L22/26 ,  H01L21/3212 ,  H01L21/67219 ,  H01L22/14

摘要： A method for polishing a substrate having a metal film thereon is described. The substrate has metal interconnects formed from part of the metal film. The polishing method includes performing a first polishing process of removing the metal film, after the first polishing process, performing a second polishing process of removing the barrier film, after the second polishing process, performing a third polishing process of polishing the insulating film, during the second polishing process and the third polishing process, monitoring a polishing state of the substrate with an eddy current sensor, and terminating the third polishing process when an output signal of the eddy current sensor reaches a predetermined threshold.

摘要翻译： 描述了在其上抛光具有金属膜的基板的方法。 基板具有由金属膜的一部分形成的金属互连。 抛光方法包括：进行第一抛光处理后的第一抛光处理，在第一抛光处理之后，在第二抛光处理之后执行去除阻挡膜的第二抛光工艺，进行抛光绝缘膜的第三抛光处理 第二抛光工艺和第三抛光工艺，用涡流传感器监测衬底的抛光状态，并且当涡流传感器的输出信号达到预定阈值时终止第三抛光处理。

公开(公告)号：US08025759B2

公开(公告)日：2011-09-27

申请号：US10559815

申请日：2004-07-01

申请人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

发明人： Tatsuya Sasaki ,  Naoshi Yamada ,  Yoshifumi Katsumata ,  Noburu Shimizu ,  Seiryo Tsuno ,  Takashi Mitsuya

IPC分类号： H01L21/304 ,  B24B37/04

CPC分类号： B24B49/03 ,  B24B37/042 ,  H01L21/3212

摘要： A polishing apparatus has a polishing section (302) configured to polish a substrate and a measurement section (307) configured to measure a thickness of a film formed on the substrate. The polishing apparatus also has an interface (310) configured to input a desired thickness of a film formed on a substrate to be polished and a storage device (308a) configured to store polishing rate data on at least one past substrate therein. The polishing apparatus includes an arithmetic unit (308b) operable to calculate a polishing rate and an optimal polishing time based on the polishing rate data and the desired thickness by using a weighted average method which weights the polishing rate data on a lately polished substrate.

摘要翻译： 抛光装置具有：抛光部（302），被配置为对基板进行抛光;以及测量部（307），被配置为测量形成在基板上的膜的厚度。 抛光装置还具有被配置为输入形成在待抛光的基板上的膜的期望厚度的接口（310）和被配置为在其中至少一个过去的基板上存储抛光速率数据的存储装置（308a）。 抛光装置包括运算单元（308b），其通过使用加权平均法来计算抛光速率和基于抛光速率数据和期望厚度的最佳抛光时间，该加权平均法将抛光速率数据加权到最近抛光的基底上。

公开(公告)号：US20070243797A1

公开(公告)日：2007-10-18

申请号：US11785190

申请日：2007-04-16

申请人： Akira Fukunaga ,  Noburu Shimizu ,  Shintaro Kamioka ,  Manabu Tsujimura

发明人： Akira Fukunaga ,  Noburu Shimizu ,  Shintaro Kamioka ,  Manabu Tsujimura

IPC分类号： B24B49/00 ,  B24B1/00

CPC分类号： B24B37/042 ,  B24B49/045 ,  H01L22/26

摘要： A polishing method for polishing a workpiece using the chemical polishing process endpoint detecting technology is applicable to actual polishing processes and polishing apparatus. The polishing method including pressing the workpiece against a polishing surface of a polishing table, moving the workpiece and the polishing surface relatively to each other to polish the workpiece, and disposing a gas suction pipe having a gas inlet port, directly above the polishing surface, supplying an atmospheric gas from above the polishing surface through the gas inlet port to a gas detector via the gas suction pipe, and monitoring a particular gas contained in the atmospheric gas with the gas detector while the workpiece is being polished.

摘要翻译： 使用化学抛光处理终点检测技术对工件进行抛光的抛光方法适用于实际的抛光工艺和抛光装置。 抛光方法包括将工件压靠在抛光台的研磨面上，相对移动工件和抛光表面以抛光工件，并且在抛光表面正上方设置具有气体入口的气体吸入管， 通过气体吸入管将来自抛光表面上方的大气气体通过气体入口供给到气体检测器，并且在抛光工件时，利用气体检测器监测包含在气体中的特定气体。

公开(公告)号：US20100015889A1

公开(公告)日：2010-01-21

申请号：US12311560

申请日：2007-10-05

申请人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

发明人： Noburu Shimizu ,  Shinro Ohta ,  Koji Maruyama ,  Yoichi Kobayashi ,  Ryuichiro Mitani ,  Shunsuke Nakai ,  Atsushi Shigeta

IPC分类号： B24B49/04 ,  B24B49/12 ,  B24B37/04

CPC分类号： B24B49/04 ,  B24B37/013 ,  B24B49/12 ,  B24B49/16 ,  B24D7/12 ,  G01B11/0675 ,  G01N21/55 ,  G01N21/9501 ,  G05B19/406 ,  G05B19/4065 ,  H01L22/26 ,  H01L2924/0002 ,  H01L2924/00

摘要： The present invention relates to a processing end point detection method for detecting a timing of a processing end point (e.g., polishing stop, changing of polishing conditions) by calculating a characteristic value of a surface of a workpiece (an object of polishing) such as a substrate. This method includes producing a spectral waveform indicating a relationship between reflection intensities and wavelengths at a processing end point, with use of a reference workpiece or simulation calculation, based on the spectral waveform, selecting wavelengths of a local maximum value and a local minimum value of the reflection intensities, calculating the characteristic value with respect to a surface, to be processed, from reflection intensities at the selected wavelengths, setting a distinctive point of time variation of the characteristic value at a processing end point of the workpiece as the processing end point, and detecting the processing end point of the workpiece by detecting the distinctive point during processing of the workpiece.

摘要翻译： 本发明涉及通过计算工件（抛光对象）的表面的特性值来检测处理终点的定时（例如，抛光停止，改变抛光条件）的处理终点检测方法，例如 底物。 该方法包括：基于频谱波形，使用基准工件或模拟计算，产生指示处理终点处的反射强度与波长之间的关系的光谱波形，选择局部最大值的波长和局部最小值的局部最小值 反射强度，从所选择的波长的反射强度计算相对于要处理的表面的特征值，将作为处理终点的处理终点处的特征值的特征时间变化设定为特征值 并且通过在工件的加工期间检测特征点来检测工件的加工终点。