公开(公告)号：US5063582A

公开(公告)日：1991-11-05

申请号：US658434

申请日：1991-02-20

申请人： Tetsuzo Mori ,  Eiji Sakamoto ,  Shinichi Hara ,  Koji Uda ,  Isamu Shimoda ,  Shunichi Uzawa ,  Kunitaka Ozawa

发明人： Tetsuzo Mori ,  Eiji Sakamoto ,  Shinichi Hara ,  Koji Uda ,  Isamu Shimoda ,  Shunichi Uzawa ,  Kunitaka Ozawa

IPC分类号： G03F7/20

CPC分类号： G03F7/709 ,  G03F7/707 ,  G03F7/70716 ,  G03F7/70866 ,  G03F7/70875

摘要： The present invention relates to a temperature control system for a lithographic exposure apparatus wherein a mask and wafer are closely disposed, and predetermined exposure energy is applied to respective shot areas of the wafer through the mask. The exposure energy is a soft-X-ray source, for example. The pattern of the mask is transferred onto the respective shot areas in a step-and-repeat manner. In the apparatus, a temperature control medium liquid is supplied into the wafer chuck which supports the wafer at the exposure position. The flow rate of the temperature control liquid is different during an exposure operation than during a non-exposure-operation. The flow control is determined in consideration of the wafer chuck vibration attributable to the supply of the liquid medium and also, of the heat generation in the wafer by the exposure energy, so that the vibration of the wafer chuck during the exposure operation is suppressed. Simultaneously the temperature rise of the wafer can also be suppressed. The pattern transfer from the mask to the wafer thus be precisely performed.

公开(公告)号：US5610965A

公开(公告)日：1997-03-11

申请号：US197569

申请日：1994-02-17

申请人： Makiko Mori ,  Kunitaka Ozawa ,  Koji Uda ,  Isamu Shimoda ,  Shunichi Uzawa ,  Eiji Sakamoto

发明人： Makiko Mori ,  Kunitaka Ozawa ,  Koji Uda ,  Isamu Shimoda ,  Shunichi Uzawa ,  Eiji Sakamoto

IPC分类号： G03F1/76 ,  G03F7/20 ,  H01L21/027 ,  G21K5/00

CPC分类号： G03F7/70866 ,  G03F7/70875

摘要： A method of exposing a wafer to exposure energy such as ultraviolet rays or X-rays through a mask to transfer a pattern of the mask onto the wafer, for example. The temperature of the mask and/or the wafer increases during the exposure operation by absorption of the exposure energy. While the wafer is being exposed, the temperature of the mask and/or the wafer is detected. If the temperature is going to exceed an exposable temperature range determined on the basis of the line width of the pattern to be transferred, the exposure operation is interrupted. Then, the heat accumulated in the mask and/or the wafer is removed. Thereafter, the exposure operation is resumed. This is repeated until the predetermined or required amount of exposure is reached, for one shot. By this, thermal expansion of the mask and the wafer during the exposure operation is prevented to assure the precision of the pattern transfer.

摘要翻译： 例如，通过掩模将晶片暴露于诸如紫外线或X射线的曝光能量以将掩模的图案转印到晶片上的方法。 掩模和/或晶片的温度在曝光操作期间通过吸收曝光能量而增加。 当晶片被暴露时，检测掩模和/或晶片的温度。 如果温度超过基于要传送的图案的线宽确定的可曝光温度范围，则曝光操作被中断。 然后，除去积存在掩模和/或晶片中的热量。 此后，恢复曝光操作。 一直重复直到达到预定或所需的曝光量。 由此，防止曝光操作期间的掩模和晶片的热膨胀，从而确保图案转印的精度。

公开(公告)号：US5001734A

公开(公告)日：1991-03-19

申请号：US401791

申请日：1989-09-01

申请人： Koji Uda ,  Yutaka Tanaka ,  Tetsuzo Mori ,  Isamu Shimoda ,  Shunichi Uzawa

发明人： Koji Uda ,  Yutaka Tanaka ,  Tetsuzo Mori ,  Isamu Shimoda ,  Shunichi Uzawa

IPC分类号： H05H13/04 ,  G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/70525 ,  G03F7/70808 ,  G03F7/70841 ,  G03F7/70883 ,  G03F7/709 ,  G03F7/70991

摘要： Synchrotron orbital radiation (SOR) exposure system includes a SOR ring and a plurality of exposure apparatus each being coupled to the SOR ring and being arranged to expose a wafer to a mask pattern with X-rays contained in synchrotron radiation from the SOR ring to thereby print the mask pattern on the wafer. Specific arrangement is provided to allow communication of a control of the SOR ring and respective controls of the exposure apparatuses. If any abnormality such as vacuum leakage occurs in one exposure apparatus, the information is transmitted to all the controls to start, in all the exposure apparatuses, appropriate operations to protect the exposure apparatuses against the abnormality. This makes it possible to prevent stoppage of the SOR exposure system as a whole even when any abnormality occurs in one exposure apparatus.

公开(公告)号：US5459573A

公开(公告)日：1995-10-17

申请号：US291747

申请日：1994-08-17

申请人： Naoto Abe ,  Koji Uda ,  Isamu Shimoda ,  Shunichi Uzawa ,  Noriyuki Nose

发明人： Naoto Abe ,  Koji Uda ,  Isamu Shimoda ,  Shunichi Uzawa ,  Noriyuki Nose

IPC分类号： G01B11/00 ,  G01D5/26 ,  G03F9/00 ,  H01L21/68 ,  H01L31/12 ,  H01L33/00 ,  H01S5/06 ,  H01S5/062 ,  H01S5/0683 ,  G01N21/86

CPC分类号： G03F9/7088 ,  G03F9/7049 ,  H01L21/68 ,  H01L21/682 ,  H01S5/06835 ,  H01S5/06216

摘要： A position detecting apparatus usable for aligning mask and a semiconductor wafer, wherein a laser beam produced by a semiconductor laser is projected through a predetermined optical system to alignment marks formed on the mask and the wafer, and the light reflected by the marks are detected by an accumulation type sensor to produce an electrical signal, from which the relative positional relation between the mask and the wafer are detected on the basis of the electrical signal. To obtain proper mark signals, the quantity of light incident on the accumulation sensor is controlled. In this apparatus, the beam emitting strength of the semiconductor laser is made constant, and the control of thee amount of light incident on the accumulation sensor is effected by controlling the operation period of the semiconductor laser. In addition, the actuation timing of the semiconductor laser is advanced from the accumulation start of the accumulation type sensor by the time required for the semiconductor laser to be thermally stabilized after its actuation. The mark detection signal produced by the accumulation sensor is precise.

摘要翻译： 一种可用于对准掩模和半导体晶片的位置检测装置，其中由半导体激光器产生的激光束通过预定的光学系统投射到形成在掩模和晶片上的对准标记，并且由标记反射的光被 用于产生电信号的累积型传感器，根据电信号检测掩模和晶片之间的相对位置关系。 为了获得适当的标记信号，控制入射在累积传感器上的光量。 在该装置中，半导体激光器的发射光强度保持恒定，并且通过控制半导体激光器的工作周期来控制入射到积聚传感器上的光量。 此外，半导体激光器的激活定时从累积型传感器的累积开始到半导体激光器在其致动之后被热稳定所需的时间前进。 由积累传感器产生的标记检测信号是精确的。

公开(公告)号：US5008703A

公开(公告)日：1991-04-16

申请号：US407434

申请日：1989-09-06

申请人： Eigo Kawakami ,  Kunitaka Ozawa ,  Koji Uda ,  Isamu Shimoda ,  Shunichi Uzawa

发明人： Eigo Kawakami ,  Kunitaka Ozawa ,  Koji Uda ,  Isamu Shimoda ,  Shunichi Uzawa

IPC分类号： G03F7/20 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F7/7075 ,  G03F7/709

摘要： Exposure apparatus and control of the same, for exposing a semiconductor wafer to a mask with a predetermined radiation energy, for manufacture of semiconductor devices, is disclosed. During a time period in which the mask-to-wafer alignment or the exposure of the wafer to the mask is made, the operation of any other driving device that has no participation in the aligning operation or the exposure operation, is prohibited. This ensures high-precision pattern printing.

公开(公告)号：US4669867A

公开(公告)日：1987-06-02

申请号：US701623

申请日：1985-02-14

申请人： Koji Uda ,  Kazuyuki Oda ,  Naoki Ayata

发明人： Koji Uda ,  Kazuyuki Oda ,  Naoki Ayata

IPC分类号： G03F9/00 ,  G03B27/42

CPC分类号： G03F9/70

摘要： An alignment and exposure apparatus in which sequential operations of pattern projection for projecting a pattern of a first object, at a reduced ratio, onto a second object through an optical system, stepwise movement for moving the second object stepwise relative to the first object, detection for detecting any positional deviation between the first and second objects at a position at which the stepwise movement of the second object is terminated, and correction for correcting the positional relation between the first and second objects on the basis of the detected positional deviation, are repeated relative to the second object to thereby print the patterns onto the second object in a reduced scale. Upon correction of the positional relation between the first and second objects, at least one of the first and second objects is displaced in accordance with the magnitude of the detected positional deviation and/or, upon stepwise movement of the second object, the amount of stepwise movement to be made is corrected in accordance with the detected positional deviation with respect to the position at which the preceding stepwise movement of the second object is terminated. By this, the time required for repetitions of exposures is reduced.

摘要翻译： 一种对准和曝光装置，其中用于通过光学系统将第一物体的图案以减小的比例投影到第二物体上的图案投影的顺序操作，用于相对于第一物体逐步移动第二物体的逐步移动，检测 用于检测在第二物体的逐步移动终止的位置处的第一和第二物体之间的任何位置偏差，并且基于检测到的位置偏差校正第一和第二物体之间的位置关系的校正被重复 从而以更小的比例将图案印刷到第二物体上。 在校正第一和第二物体之间的位置关系时，第一和第二物体中的至少一个根据检测到的位置偏差的大小而移位和/或在第二物体的逐步移动时， 根据检测到的相对于第二物体的先前逐步移动终止的位置的位置偏差来校正要进行的移动。 因此，减少重复曝光所需的时间。

公开(公告)号：US5028797A

公开(公告)日：1991-07-02

申请号：US413739

申请日：1989-09-28

申请人： Naoto Abe ,  Shigeyuki Suda ,  Koji Uda ,  Hirohisa Ohta ,  Noriyuki Nose

发明人： Naoto Abe ,  Shigeyuki Suda ,  Koji Uda ,  Hirohisa Ohta ,  Noriyuki Nose

IPC分类号： G01B11/00 ,  G03F9/00 ,  H01L21/027 ,  H01L21/30

CPC分类号： G03F9/7096 ,  G03F9/7049

摘要： An alignment system for aligning a mask and a wafer into a predetermined positional relationship uses alignment marks provided on the mask and the water. In this system, light from a light source is directed to the alignment marks of the mask and the wafer and, then, the light from these alignment marks is detected by an accumulation type photoelectric converting device, for alignment of the mask and the wafer. The accumulation time of the photoelectric converting device is controlled to be sufficiently longer than or to be equal to a multiple, by an integral number, of the period of relative and natural vibration of the mask and the wafer. This makes it possible to reduce the effect of the relative vibration of the mask and the wafer upon the alignment result and, therefore, makes it possible to enhance the alignment precision.