Liquid cooled X-ray lithographic exposure apparatus
    1.
    发明授权
    Liquid cooled X-ray lithographic exposure apparatus 失效
    液体冷却X射线光刻曝光装置

    公开(公告)号:US5063582A

    公开(公告)日:1991-11-05

    申请号:US658434

    申请日:1991-02-20

    IPC分类号: G03F7/20

    摘要: The present invention relates to a temperature control system for a lithographic exposure apparatus wherein a mask and wafer are closely disposed, and predetermined exposure energy is applied to respective shot areas of the wafer through the mask. The exposure energy is a soft-X-ray source, for example. The pattern of the mask is transferred onto the respective shot areas in a step-and-repeat manner. In the apparatus, a temperature control medium liquid is supplied into the wafer chuck which supports the wafer at the exposure position. The flow rate of the temperature control liquid is different during an exposure operation than during a non-exposure-operation. The flow control is determined in consideration of the wafer chuck vibration attributable to the supply of the liquid medium and also, of the heat generation in the wafer by the exposure energy, so that the vibration of the wafer chuck during the exposure operation is suppressed. Simultaneously the temperature rise of the wafer can also be suppressed. The pattern transfer from the mask to the wafer thus be precisely performed.

    Wafer supporting apparatus
    3.
    发明授权
    Wafer supporting apparatus 失效
    晶圆支撑装置

    公开(公告)号:US4969168A

    公开(公告)日:1990-11-06

    申请号:US401654

    申请日:1989-08-31

    摘要: A wafer chuck usable with a semiconductor exposure apparatus wherein a mask and a semiconductor wafer are placed in a vacuum ambience or a pressure-reduced gas ambience, and wherein the wafer is exposed through the mask to radiation energy such as X-rays contained in a synchrotron radiation beam, by which the pattern of the mask is transferred onto the wafer. The wafer is first attracted on the wafer supporting surface of the chuck by vacuum attraction, and thereafter, the wafer is attracted by the electrostatic attraction force. Thereafter, the vacuum attraction is broken by supplying a gas. When the pattern of the mask is transferred onto the wafer, the wafer is retained on the wafer supporting surface by the electrostatic attraction force only. By this, the sheet-like member (wafer) supporting apparatus can correctly contact the wafer supporting surface to the wafer without being influenced by the undulation of the wafer. In addition, the heat produced in the wafer during exposure can be removed efficiently by temperature controlled water supplied to the wafer supporting apparatus.

    Exposure apparatus for synchrotron radiation lithography
    4.
    发明授权
    Exposure apparatus for synchrotron radiation lithography 失效
    用于同步辐射光刻的曝光装置

    公开(公告)号:US6167111A

    公开(公告)日:2000-12-26

    申请号:US108373

    申请日:1998-07-01

    IPC分类号: G03F7/20 G21K1/06 G21K5/00

    CPC分类号: G03F7/70058 G21K1/06

    摘要: An apparatus for transferring a pattern of a mask onto a substrate with radiation light from a synchrotron radiation light source, includes a first mirror for collectively reflecting radiation light from the synchrotron radiation light source, and a second mirror for reflecting radiation light from the first mirror and for projecting the same to the mask. When a light ray advancing from a light emission point of the light source toward a center of a predetermined region of the mask, to be transferred to the substrate, is taken as a chief ray, when a normal to each of the first and second mirrors at an incidence position of a corresponding chief ray is taken as a Z axis, when a direction perpendicular to a plane defined by the Z axis of each mirror and a corresponding chief ray is taken as an X axis, and when a Y axis is taken along a direction perpendicular to the Z axis and X axis of each mirror, the first mirror has a reflection surface of a shape which is concave with respect to the X axis direction and concave with respect to the Y axis direction, while the second mirror has a reflection surface of a shape which is convex with respect to the Y axis direction.

    摘要翻译: 一种用于利用来自同步加速器辐射光源的辐射光将掩模图案转印到基板上的装置,包括用于共同地反射来自同步加速器辐射光源的辐射光的第一反射镜和用于反射来自第一反射镜的辐射光的第二反射镜 并将其投射到面罩。 当将从光源的发光点向掩模的预定区域的中心传播的光线作为主光线时,当第一和第二反射镜中的每一个的法线 当将相应的主光线的入射位置作为Z轴时,当将与每个反射镜的Z轴和相应的主光线所定义的平面垂直的方向作为X轴,并且当采用Y轴时 沿着与每个反射镜的Z轴和X轴垂直的方向,第一反射镜具有相对于X轴方向为凹形且相对于Y轴方向凹陷的形状的反射面,而第二反射镜具有 相对于Y轴方向凸出的形状的反射面。

    X-ray lithography apparatus including a dose detectable mask
    5.
    发明授权
    X-ray lithography apparatus including a dose detectable mask 失效
    X射线光刻设备包括剂量可检测的掩模

    公开(公告)号:US5323440A

    公开(公告)日:1994-06-21

    申请号:US22407

    申请日:1993-02-24

    摘要: An X-ray exposure apparatus using radiation light as exposure light, wherein the apparatus includes: a display device; a detecting device for detecting in each exposure the amount of exposure absorbed by a mask during the exposure; a memory for memorizing an accumulated dose of the mask; and a controller for causing the display device to display a dose of the mask, wherein the dose to be displayed corresponds to the sum of the accumulated dose memorized in the memory and the amount of exposure detected by the detecting device. Also a mask structure suitably usable in such an exposure apparatus.

    摘要翻译: 一种使用放射线作为曝光光的X射线曝光装置,其中,所述装置包括:显示装置; 检测装置,用于在曝光期间检测由掩模吸收的曝光量; 用于记忆掩模的累积剂量的存储器; 以及用于使显示装置显示剂量的控制器,其中待显示的剂量对应于存储在存储器中的累积剂量与检测装置检测到的曝光量的总和。 也可适用于这种曝光装置的掩模结构。