公开(公告)号：US06884295B2

公开(公告)日：2005-04-26

申请号：US09864374

申请日：2001-05-25

申请人： Katsutoshi Ishii ,  Kazutoshi Miura

发明人： Katsutoshi Ishii ,  Kazutoshi Miura

IPC分类号： H01L21/314 ,  H01L21/316 ,  H01L21/318 ,  C23C16/00

CPC分类号： H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

摘要： This invention is an oxynitride film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas heating step of heating a process gas to a temperature not lower than a reaction temperature at which an oxynitride film can be formed, the process gas consisting of dinitrogen oxide gas; and a film forming step of forming an oxynitride film on the object to be processed by supplying the heated process gas into the heated processing chamber. The temperature to which the reaction chamber is heated in the reaction chamber heating step is set at a temperature below a temperature at which the process gas undergoes a reaction.

摘要翻译： 本发明是一种氮氧化物膜形成方法，包括：将反应室加热到预定温度的反应室加热步骤，反应室包含待处理物体; 将处理气体加热到能够形成氮氧化物膜的反应温度以上的气体加热工序，由二氧化氮气体构成的工艺气体; 以及通过将加热的处理气体供给到加热处理室中而在被处理物上形成氮氧化物膜的成膜工序。 在反应室加热步骤中将反应室加热的温度设定在低于处理气体发生反应的温度的温度。

公开(公告)号：US07211295B2

公开(公告)日：2007-05-01

申请号：US10830317

申请日：2004-04-23

申请人： Yutaka Takahashi ,  Hitoshi Kato ,  Katsutoshi Ishii ,  Kazutoshi Miura

发明人： Yutaka Takahashi ,  Hitoshi Kato ,  Katsutoshi Ishii ,  Kazutoshi Miura

IPC分类号： C23C16/40

CPC分类号： H01L21/0214 ,  H01L21/02164 ,  H01L21/0217 ,  H01L21/02211 ,  H01L21/02238 ,  H01L21/02249 ,  H01L21/02255 ,  H01L21/02271 ,  H01L21/3144 ,  H01L21/31662 ,  H01L21/3185

摘要： Disclosed herein is a silicon dioxide film forming method including: a reaction chamber heating step of heating a reaction chamber to a predetermined temperature, the reaction chamber containing an object to be processed; a gas pretreating step of energizing a process gas to produce water, the process gas including hydrogen, chlorine, and oxygen gas; and a film forming step of forming a silicon dioxide film by supplying the the process gas that has been energized to produce water into the heated reaction chamber to oxidize the silicon layer of the object to be processed.

摘要翻译： 本文公开了一种二氧化硅膜形成方法，包括：将反应室加热至预定温度的反应室加热步骤，所述反应室包含待处理物体; 气体预处理步骤，其使处理气体通电以产生水，所述处理气体包括氢气，氯气和氧气; 以及成膜步骤，通过将被通电的处理气体供给到加热的反应室中来形成二氧化硅膜，以氧化待处理物体的硅层。

公开(公告)号：US5441076A

公开(公告)日：1995-08-15

申请号：US222589

申请日：1994-04-04

申请人： Shuji Moriya ,  Takenobu Matsuo ,  Tsuyoshi Wakabayashi ,  Kazutoshi Miura ,  Takahiro Mori

发明人： Shuji Moriya ,  Takenobu Matsuo ,  Tsuyoshi Wakabayashi ,  Kazutoshi Miura ,  Takahiro Mori

IPC分类号： G05D7/06

CPC分类号： G05D7/0635 ,  Y10T137/7759 ,  Y10T137/7761 ,  Y10T137/87885

摘要： A vertical heat treatment apparatus includes a heat treatment unit for performing a heat treatment process to a semiconductor wafer using a gas and a gas supply unit for supplying the gas to the heat treatment unit. The gas supply unit includes a plurality of gas controlling instruments having a plurality of gas flow control devices, a gas controlling instruments-storage vessel for storing the instruments, and a plurality of electrical parts arranged outside the storage vessel and belonging to the instruments, and an electrical parts-storage vessel for storing the electrical parts, and the plurality of gas flow control devices are integrated with each other by block-like joints.

摘要翻译： 立式热处理装置包括：热处理单元，用于使用气体和用于将气体供给到热处理单元的气体供给单元对半导体晶片进行热处理处理。 气体供给单元包括具有多个气体流量控制装置的多个气体控制装置，用于存储仪器的气体控制装置 - 储存容器，以及设置在存储容器外部并属于仪器的多个电气部件，以及 用于存储电气部件的电气部件存储容器，并且多个气体流量控制装置通过块状接头彼此一体化。

公开(公告)号：US4930064A

公开(公告)日：1990-05-29

申请号：US256574

申请日：1988-10-12

申请人： Shigeru Tanaka ,  Kazutoshi Miura

发明人： Shigeru Tanaka ,  Kazutoshi Miura

IPC分类号： H02M5/27 ,  H02J3/34 ,  H02M5/45 ,  H02M7/527

CPC分类号： H02J3/34 ,  H02M5/4505 ,  H02M7/527

摘要： A high frequency link power converter apparatus includes a power source, a circulating current type AC-AC converter having an output terminal connected to the power source, a high frequency phase-advancing capacitor connected to an input terminal of the AC-AC converter, a phase controller for controlling a firing phase of the AC-AC converter, an external oscillator for supplying phase reference signals to the phase controller, a first circuit for controlling a crest value of voltages applied to the phase-advancing capacitor, a second circuit for detecting a phase difference between the reference signals and the voltages applied to the phase-advancing capacitor, and a third circuit for controlling the phase difference, so that the magnitude of the phase difference becomes substantially zero.

摘要翻译： 一种高频链路功率转换装置，包括电源，具有与电源连接的输出端的循环电流型AC-AC变换器，与AC-AC变换器的输入端连接的高频相位推进电容器 用于控制AC-AC转换器的点火相位的相位控制器，用于向相位控制器提供相位参考信号的外部振荡器，用于控制施加到相位推进电容器的电压的波峰值的第一电路，用于检测相位参考信号的第二电路 参考信号和施加到相推进电容器的电压之间的相位差，以及用于控制相位差的第三电路，使得相位差的幅度基本为零。