Abstract:
A curved image sensor system includes (a) an image sensor substrate having a concave light-receiving surface, a pixel array located along the concave light-receiving surface, and a planar external surface facing away from the concave light-receiving surface, (b) a light-transmitting substrate bonded to the image sensor substrate by a bonding layer, and (c) a hermetically sealed cavity, bounded at least by the concave light-receiving surface, the light-transmitting substrate, and the bonding layer.
Abstract:
An image sensor module comprises an image sensor having a light sensing area, a cover glass for covering the light sensing area, a dam between the image sensor and the cover glass, which surrounds the light sensing area, and has an outer wall and an inner wall, where a cross-section of the inner wall parallel to the surface of the light sensing area of the image sensor forms a sawtooth pattern and/or, where a cross-section of the inner wall orthogonal to the surface of the light sensing area of the image sensor forms an inclined surface.
Abstract:
An image sensor module comprises: a substrate having a first side and second side, the first side being an opposite of the second side, an image sensor attached to the first side of the substrate, bonding wires to bond the image sensor to pads on the first side of the substrate, a protective structure disposed on the first side of the substrate surrounding the image sensor, the bonding wires, and the pads, the protective structure having a dam and a lid, a cover glass disposed on the protective structure, and a set of solder balls attached to the second side of the substrate.
Abstract:
A panel carrier includes a substrate, a die-attach region, a short sidewall, and a conductor. The die-attach region is on a top substrate surface of the substrate for supporting the LCoS panel. The short sidewall is on a first side of the die-attach region and has a top sidewall surface at a first height above the top substrate surface exceeding 0.4 millimeters and an aperture spanning the top sidewall surface and the top substrate surface. The conductor at least partially fills the aperture for electrically connecting to the conductive layer. A method for mechanically and electrically connecting a LCoS panel to a panel carrier having a short sidewall includes electrically connecting a transparent conductive layer of the LCoS panel to a conductive material, within the short sidewall, with a conductive adhesive having a thickness, between the transparent conductive layer and the short sidewall, less than two-hundred micrometers.
Abstract:
A curved image sensor system includes (a) an image sensor substrate having a concave light-receiving surface, a pixel array located along the concave light-receiving surface, and a planar external surface facing away from the concave light-receiving surface, (b) a light-transmitting substrate bonded to the image sensor substrate by a bonding layer, and (c) a hermetically sealed cavity, bounded at least by the concave light-receiving surface, the light-transmitting substrate, and the bonding layer.
Abstract:
A space-efficient PCB-mountable image sensor includes a semiconductor substrate having a top surface and a side surface, a bond pad on the top surface, and a conductive layer formed on the side surface and electrically connected to the bond pad. A camera module includes a PCB and a space-efficient PCB-mountable image sensor. A conductive layer of the PCB-mountable image sensor is electrically connected between the bond pad and a contact pad of the PCB. A method for fabricating a space-efficient PCB-mountable image sensor includes forming a trench next to an image sensor on a first side of an image sensor wafer, the image sensor including a bond pad. The method also includes forming a conductive layer spanning the bond pad and at least part of a side wall of the trench, and singulating the image sensor wafer along the trench.
Abstract:
The present disclosure provides a semiconductor device. The semiconductor device includes a semiconductor substrate and a first deep trench isolation (DTI) structure filled with a dielectric material formed on the semiconductor substrate. The first DTI structure is disposed in the first seal ring region and is extended into the semiconductor substrate. The semiconductor substrate has a pixel array region and a first seal ring region. The first seal ring region is proximate to an edge of the semiconductor substrate and surrounds the pixel array region. The first DTI structure is formed in the first seal ring region and surrounds the pixel array region.
Abstract:
A method of image sensor package fabrication includes forming a cavity in a ceramic substrate, and placing an image sensor in the cavity in the ceramic substrate. An image sensor processor is also placed in the cavity in the ceramic substrate, and the image sensor and the image sensor processor are wire bonded to electrical contacts. Glue is deposited on the ceramic substrate, and a glass layer is placed on the glue to adhere the glass layer to the ceramic substrate. The image sensor processor and the image sensor are disposed in the cavity between the glass layer and the ceramic substrate.
Abstract:
A trenched device wafer includes a device substrate layer having a top surface; a plurality of devices in the device substrate layer, and a trench in the top surface. The trench extends into the device substrate layer, and is located between a pair of adjacent devices of the plurality of devices. A method for forming a device die from a device wafer includes forming a trench in a top surface of the device wafer between two adjacent devices of the device wafer. The trench has a bottom surface located (a) at a first depth beneath the top surface and (b) at a first height above a wafer bottom surface. The method also includes, after forming the trench, decreasing a thickness of the device wafer, between the two adjacent devices, to a thickness less than the first height.