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18 条记录 (耗时 0.014 秒)

    Laser marked code pattern for representing tracing number of chip
    1.
    发明授权
    Laser marked code pattern for representing tracing number of chip 有权

    公开(公告)号：US11562928B2

    公开(公告)日：2023-01-24

    申请号：US16257223

    申请日：2019-01-25

    申请人： OmniVision Technologies, Inc.

    发明人： Wei-Feng Lin ,  Chi-Chih Huang

    IPC分类号： H01L21/768 ,  H01L23/544 ,  H01L27/146 ,  H01L23/00

    摘要： A chip comprises a semiconductor substrate having a first side and a second side opposite to the first side, a plurality of conductive metal patterns formed on the first side of the semiconductor substrate, a plurality of solder balls formed on the first side of the semiconductor substrate, and at least one code pattern formed using laser marking on the first side of the semiconductor substrate in a space free from the plurality of conductive metal patterns and the plurality of solder balls, wherein the at least one code pattern is visible from a backside of the chip, the at least one code pattern represents a binary number having four bits; and the binary number represents a decimal number to represent a tracing number of the chip.

    LASER MARKED CODE PATTERN FOR REPRESENTING TRACING NUMBER OF CHIP
    3.
    发明申请
    LASER MARKED CODE PATTERN FOR REPRESENTING TRACING NUMBER OF CHIP 审中-公开

    公开(公告)号：US20200243384A1

    公开(公告)日：2020-07-30

    申请号：US16257223

    申请日：2019-01-25

    申请人： OmniVision Technologies, Inc.

    发明人： Wei-Feng Lin ,  Chi-Chih Huang

    IPC分类号： H01L21/768 ,  H01L23/544 ,  H01L23/00 ,  H01L27/146

    摘要： A chip comprises a semiconductor substrate having a first side and a second side opposite to the first side, a plurality of conductive metal patterns formed on the first side of the semiconductor substrate, a plurality of solder balls formed on the first side of the semiconductor substrate, and at least one code pattern formed using laser marking on the first side of the semiconductor substrate in a space free from the plurality of conductive metal patterns and the plurality of solder balls, wherein the at least one code pattern is visible from a backside of the chip, the at least one code pattern represents a binary number having four bits; and the binary number represents a decimal number to represent a tracing number of the chip.

    SYSTEM-IN-PACKAGE IMAGE SENSOR
    4.
    发明申请
    SYSTEM-IN-PACKAGE IMAGE SENSOR 审中-公开

    公开(公告)号：US20180182797A1

    公开(公告)日：2018-06-28

    申请号：US15899900

    申请日：2018-02-20

    申请人： OmniVision Technologies, Inc.

    发明人： Wei-Feng Lin ,  Chi-Chih Huang ,  En-Chi Li

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14618 ,  H01L27/14627 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1469

    摘要： A method of image sensor package fabrication includes forming a cavity in a ceramic substrate, and placing an image sensor in the cavity in the ceramic substrate. An image sensor processor is also placed in the cavity in the ceramic substrate, and the image sensor and the image sensor processor are wire bonded to electrical contacts. Glue is deposited on the ceramic substrate, and a glass layer is placed on the glue to adhere the glass layer to the ceramic substrate. The image sensor processor and the image sensor are disposed in the cavity between the glass layer and the ceramic substrate.

    Trenched Device Wafer, Stepped-Sidewall Device Die, And Associated Method
    5.
    发明申请
    Trenched Device Wafer, Stepped-Sidewall Device Die, And Associated Method 审中-公开

    公开(公告)号：US20170294471A1

    公开(公告)日：2017-10-12

    申请号：US15096136

    申请日：2016-04-11

    申请人： OmniVision Technologies, Inc.

    发明人： Yumei Su ,  Chi-Chih Huang ,  Wei-Feng Lin

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14632 ,  H01L27/14687

    摘要： A trenched device wafer includes a device substrate layer having a top surface; a plurality of devices in the device substrate layer, and a trench in the top surface. The trench extends into the device substrate layer, and is located between a pair of adjacent devices of the plurality of devices. A method for forming a device die from a device wafer includes forming a trench in a top surface of the device wafer between two adjacent devices of the device wafer. The trench has a bottom surface located (a) at a first depth beneath the top surface and (b) at a first height above a wafer bottom surface. The method also includes, after forming the trench, decreasing a thickness of the device wafer, between the two adjacent devices, to a thickness less than the first height.

    Curved Image Sensor Systems
    6.
    发明申请
    Curved Image Sensor Systems 有权
    弯曲图像传感器系统

    公开(公告)号：US20160268327A1

    公开(公告)日：2016-09-15

    申请号：US15161726

    申请日：2016-05-23

    申请人： OmniVision Technologies, Inc.

    发明人： Wei-Feng Lin ,  Chi-Chih Huang

    IPC分类号： H01L27/146

    CPC分类号： H01L27/14618 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L2224/11

    摘要： A curved image sensor system includes (a) an image sensor substrate having a concave light-receiving surface, a pixel array located along the concave light-receiving surface, and a planar external surface facing away from the concave light-receiving surface, (b) a light-transmitting substrate bonded to the image sensor substrate by a bonding layer, and (c) a hermetically sealed cavity, bounded at least by the concave light-receiving surface, the light-transmitting substrate, and the bonding layer.

    摘要翻译： 弯曲图像传感器系统包括：（a）具有凹面光接收面的图像传感器基板，沿着凹面受光面设置的像素阵列，以及背离凹面受光面的平面外表面，（b ）通过接合层与所述图像传感器基板接合的透光性基板，以及（c）至少由所述凹面受光面，所述透光性基板和所述接合层限定的气密密封空腔。

    Curved image sensor systems and methods for manufacturing the same
    9.
    发明授权
    Curved image sensor systems and methods for manufacturing the same 有权
    弯曲图像传感器系统及其制造方法

    公开(公告)号：US09349763B1

    公开(公告)日：2016-05-24

    申请号：US14618703

    申请日：2015-02-10

    申请人： OmniVision Technologies, Inc.

    发明人： Wei-Feng Lin ,  Chi-Chih Huang

    IPC分类号： H01L31/0232 ,  H04N5/335 ,  H01L27/146

    CPC分类号： H01L27/14618 ,  H01L27/14605 ,  H01L27/14607 ,  H01L27/14612 ,  H01L27/14634 ,  H01L27/14636 ,  H01L27/1464 ,  H01L27/14643 ,  H01L27/14687 ,  H01L27/14689 ,  H01L27/14698 ,  H01L2224/11

    摘要： A method for manufacturing one or more curved image sensor systems includes (a) at elevated pressure relative to atmospheric pressure, bonding a light-transmitting substrate to an image sensor wafer having at least one pixel array, to form a composite wafer with a respective hermetically sealed cavity between the light-transmitting substrate and each pixel array, and (b) thinning the image sensor wafer of the composite wafer to induce deformation of the image sensor wafer to form a concavely curved pixel array from each pixel array. A curved image sensor system includes (a) an image sensor substrate having a concave light-receiving surface and a pixel array located along the concave light-receiving surface, (b) a light-transmitting substrate bonded to the image sensor substrate by a bonding layer, and (c) a hermetically sealed cavity, bounded at least by the concave light-receiving surface, the light-transmitting substrate, and the bonding layer.

    摘要翻译： 用于制造一个或多个弯曲图像传感器系统的方法包括（a）在相对于大气压力的升高的压力下，将透光衬底粘合到具有至少一个像素阵列的图像传感器晶片，以形成具有相应气密的复合晶片 透光基板和每个像素阵列之间的密封腔，以及（b）使复合晶片的图像传感器晶片变薄以引起图像传感器晶片的变形，从而形成每个像素阵列的凹曲面像素阵列。 弯曲图像传感器系统包括：（a）具有凹面光接收面的图像传感器基板和沿着凹面受光面设置的像素阵列，（b）通过接合将图像传感器基板接合的透光基板 层，以及（c）至少由凹面光接收表面限定的气密密封腔，透光衬底和结合层。

    Device-Embedded Image Sensor, And Wafer-Level Method For Fabricating Same
    10.
    发明申请
    Device-Embedded Image Sensor, And Wafer-Level Method For Fabricating Same 审中-公开
    器件嵌入式图像传感器和晶圆级方法制造相同

    公开(公告)号：US20160141280A1

    公开(公告)日：2016-05-19

    申请号：US14542195

    申请日：2014-11-14

    申请人： OmniVision Technologies, Inc.

    发明人： Wei-Feng Lin ,  Chi-Chih Huang

    IPC分类号： H01L25/18 ,  H01L25/00 ,  H01L27/146

    CPC分类号： H01L25/18 ,  H01L25/50 ,  H01L27/14618 ,  H01L27/14632 ,  H01L27/14636 ,  H01L27/14687 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/49175 ,  H01L2924/00014

    摘要： A device-embedded image sensor includes an image sensor formed in a first semiconductor substrate; a top conductive pad formed on a top surface of the first semiconductor substrate; and a semiconductor device formed in a second semiconductor substrate bonded to a bottom surface of the first semiconductor substrate, the semiconductor device electrically connected to the top conductive pad. A method for fabricating a device-embedded image sensor from a CMOS image sensor wafer assembly that includes an image sensor and a conductive pad. The method includes exposing the conductive pad; forming an isolation layer; exposing a surface of each conductive pad; forming a patterned redistribution layer (RDL) having a plurality of RDL elements on the isolation layer; electrically isolating adjacent RDL elements; and laminating the CMOS image sensor wafer assembly and a semiconductor device wafer to form undiced device-embedded image sensors.

    摘要翻译： 装置嵌入式图像传感器包括形成在第一半导体衬底中的图像传感器; 形成在所述第一半导体衬底的顶表面上的顶部导电焊盘; 以及形成在第二半导体衬底中的半导体器件，其接合到第一半导体衬底的底表面，所述半导体器件电连接到顶部导电焊盘。 一种从包括图像传感器和导电焊盘的CMOS图像传感器晶片组件制造装置嵌入式图像传感器的方法。 该方法包括暴露导电垫; 形成隔离层; 暴露每个导电垫的表面; 在所述隔离层上形成具有多个RDL元件的图案化再分配层（RDL）; 电隔离相邻的RDL元件; 并且将CMOS图像传感器晶片组件和半导体器件晶片层叠以形成未开发的器件嵌入式图像传感器。