Abstract:
A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a first transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the first transparent shield. A light blocking layer is deposited and disposed between lateral edges of the pixel array and lateral edges of the first transparent shield, and a second transparent shield is placed on the image sensor package, where the light blocking layer is disposed between the first transparent shield and the second transparent shield.
Abstract:
An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the semiconductor material, and the pixel array is disposed between the semiconductor material and the first transparent shield. The image sensor package further includes a second transparent shield, where the first transparent shield is disposed between the pixel array and the second transparent shield. A light blocking layer is disposed between the first transparent shield and the second transparent shield, and the light blocking layer is disposed to prevent light from reflecting off edges of the first transparent shield into the pixel array.
Abstract:
A chip scale package (CSP) structure for an image sensor comprises an image sensor chip, wherein the image sensor chip comprises a semiconductor substrate having a top surface to receive light, a plurality of color filters disposed over the top surface, and a plurality of micro lenses disposed on the plurality of color filters. A low refractive index material is disposed over the image sensor chip, wherein the low refractive index material covers the plurality of micro lenses, and wherein a refractive index of the low refractive index material is lower than a refractive index of the plurality of micro lenses. A cover glass is disposed directly on the low refractive index material, wherein no air gap is between the cover glass and the low refractive index material, and between the low refractive index material and the image sensor chip. Therefore, the cover glass is fully supported by the low refractive index material without any dams.
Abstract:
A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.
Abstract:
A novel method of forming an alignment layer of a liquid crystal display device includes the steps of providing a substrate (e.g., a processed silicon wafer, etc.) having an alignment layer material deposited thereon and applying a series of pulses from a pulse laser to anneal portions of the alignment layer material and alter its surface morphology. The method can include the step of depositing the alignment layer material (e.g., a spin-on dielectric including SiO2) over the substrate using a spin-on process prior to laser annealing. Applying the series of laser pulses creates a repetitive pattern of features that facilitate alignment of liquid crystals according to a laser scan trace. Liquid crystal display devices with laser-annealed alignment layer(s) are also disclosed. The alignment layers of the invention are quickly and inexpensively applied and are very robust under prolonged, high-intensity light stress.
Abstract:
A novel method of forming an alignment layer of a liquid crystal display device includes the steps of providing a substrate (e.g., a processed silicon wafer, etc.) having an alignment layer material deposited thereon and applying a series of pulses from a pulse laser to anneal portions of the alignment layer material and alter its surface morphology. The method can include the step of depositing the alignment layer material (e.g., a spin-on dielectric including SiO2) over the substrate using a spin-on process prior to laser annealing. Applying the series of laser pulses creates a repetitive pattern of features that facilitate alignment of liquid crystals according to a laser scan trace. Liquid crystal display devices with laser-annealed alignment layer(s) are also disclosed. The alignment layers of the invention are quickly and inexpensively applied and are very robust under prolonged, high-intensity light stress.
Abstract:
An image sensor includes a plurality of photodiodes disposed in a semiconductor layer, a first isolation layer, and a dielectric filler. The dielectric filler is disposed in a trench in the first isolation layer, and the first isolation layer is disposed between the semiconductor layer and the dielectric filler. At least one additional isolation layer is disposed proximate to the first isolation layer, and a plurality of light channels in the at least one additional isolation layer extend through the at least one additional isolation layer to the dielectric filler. The plurality of light channels is disposed to direct light into the plurality of photodiodes.
Abstract:
An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.