公开(公告)号：US10297627B1

公开(公告)日：2019-05-21

申请号：US15806522

申请日：2017-11-08

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Ming Zhang ,  Dyson Tai

IPC: H01L27/146

Abstract: A chip scale package (CSP) structure for an image sensor comprises an image sensor chip, wherein the image sensor chip comprises a semiconductor substrate having a top surface to receive light, a plurality of color filters disposed over the top surface, and a plurality of micro lenses disposed on the plurality of color filters. A low refractive index material is disposed over the image sensor chip, wherein the low refractive index material covers the plurality of micro lenses, and wherein a refractive index of the low refractive index material is lower than a refractive index of the plurality of micro lenses. A cover glass is disposed directly on the low refractive index material, wherein no air gap is between the cover glass and the low refractive index material, and between the low refractive index material and the image sensor chip. Therefore, the cover glass is fully supported by the low refractive index material without any dams.

公开(公告)号：US10147751B2

公开(公告)日：2018-12-04

申请号：US15945530

申请日：2018-04-04

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L31/0203 ,  H01L27/146

Abstract: A method of image sensor package fabrication includes providing an image sensor, including a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. The method further includes removing portions of the transparent shield to form recessed regions in the transparent shield, where lateral bounds of the transparent shield extend beyond lateral bounds of the pixel array, and wherein the recessed regions are disposed in portions of the transparent shield that extend beyond the lateral bounds of the pixel array. The recessed regions are filled with a light blocking layer.

公开(公告)号：US09921442B2

公开(公告)日：2018-03-20

申请号：US14995548

申请日：2016-01-14

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Dyson Hsin-Chih Tai ,  Ming Zhang ,  Chia-Chun Miao

IPC: G02F1/1337 ,  G02F1/136

CPC classification number: G02F1/136 ,  G02F1/133788

Abstract: A novel method of forming an alignment layer of a liquid crystal display device includes the steps of providing a substrate (e.g., a processed silicon wafer, etc.) having an alignment layer material deposited thereon and applying a series of pulses from a pulse laser to anneal portions of the alignment layer material and alter its surface morphology. The method can include the step of depositing the alignment layer material (e.g., a spin-on dielectric including SiO2) over the substrate using a spin-on process prior to laser annealing. Applying the series of laser pulses creates a repetitive pattern of features that facilitate alignment of liquid crystals according to a laser scan trace. Liquid crystal display devices with laser-annealed alignment layer(s) are also disclosed. The alignment layers of the invention are quickly and inexpensively applied and are very robust under prolonged, high-intensity light stress.

公开(公告)号：US20170205653A1

公开(公告)日：2017-07-20

申请号：US14995548

申请日：2016-01-14

Applicant: OmniVision Technologies, Inc.

Inventor： Yin Qian ,  Dyson Hsin-Chih Tai ,  Ming Zhang ,  Chia-Chun Miao

IPC: G02F1/1337 ,  G02F1/1343

CPC classification number: G02F1/136 ,  G02F1/133788

Abstract: A novel method of forming an alignment layer of a liquid crystal display device includes the steps of providing a substrate (e.g., a processed silicon wafer, etc.) having an alignment layer material deposited thereon and applying a series of pulses from a pulse laser to anneal portions of the alignment layer material and alter its surface morphology. The method can include the step of depositing the alignment layer material (e.g., a spin-on dielectric including SiO2) over the substrate using a spin-on process prior to laser annealing. Applying the series of laser pulses creates a repetitive pattern of features that facilitate alignment of liquid crystals according to a laser scan trace. Liquid crystal display devices with laser-annealed alignment layer(s) are also disclosed. The alignment layers of the invention are quickly and inexpensively applied and are very robust under prolonged, high-intensity light stress.

公开(公告)号：US09590005B1

公开(公告)日：2017-03-07

申请号：US15005672

申请日：2016-01-25

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Ming Zhang ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.

Abstract translation: 图像传感器包括在半导体衬底中彼此散布的第一和第二多个光电二极管。 入射光将被引导通过半导体衬底的表面进入第一和第二多个光电二极管。 与第二多个光电二极管相比，第一多个光电二极管对入射光的灵敏度更高。 金属膜层设置在第二多个光电二极管的半导体衬底的表面上，而不是在第一多个光电二极管上。 金属栅格设置在半导体衬底的表面上，并且包括第一多个开口，入射光通过该开口被引导到第一多个光电二极管中。 金属栅格还包括第二多个开口，入射光通过该第二多个开口被引导通过金属膜层进入第二多个光电二极管。

公开(公告)号：US20160322413A1

公开(公告)日：2016-11-03

申请号：US14698355

申请日：2015-04-28

Applicant: OmniVision Technologies, Inc

Inventor： Qian Yin ,  Ming Zhang ,  Dyson Hsinchih Tai

IPC: H01L27/146

CPC classification number: H01L27/14632 ,  H01L27/14618 ,  H01L27/14687

Abstract: A method for fabricating a sealed-sidewall device die may include filling grooves of a deeply-grooved device wafer with a sealant, yielding a sealed grooved device wafer. The method may also include forming grooves in a device wafer to yield the deeply-grooved device wafer. The step of forming grooves may include forming a groove that at least partially penetrates each layer of the device wafer. The method may further include masking each device of the deeply-grooved device wafer. A sealed-sidewall device die may include at least one layer including a device substrate layer, a sidewall including a respective surface of each layer of the at least one layer, a sidewall sealant covering the sidewall, and a device formed on the device substrate layer. The sidewall sealant optionally does not cover a top surface of the device. The top surface of the device may directly adjoin an ambient medium thereabove.

Abstract translation: 用于制造密封侧壁装置模具的方法可以包括用密封剂填充深槽装置晶片的填充槽，从而产生密封的沟槽装置晶片。 该方法还可以包括在器件晶片中形成凹槽以产生深沟槽器件晶片。 形成凹槽的步骤可以包括形成至少部分地穿透器件晶片的每一层的凹槽。 该方法还可以包括掩蔽深沟槽器件晶片的每个器件。 密封侧壁器件裸片可以包括至少一个层，包括器件衬底层，包括至少一个层的每个层的相应表面的侧壁，覆盖侧壁的侧壁密封件和形成在器件衬底层上的器件 。 侧壁密封剂可选地不覆盖设备的顶表面。 设备的顶表面可以直接与上面的环境介质相邻。

公开(公告)号：US20170317124A1

公开(公告)日：2017-11-02

申请号：US15430071

申请日：2017-02-10

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material. A first transparent shield is adhered to the semiconductor material, and the pixel array is disposed between the semiconductor material and the first transparent shield. The image sensor package further includes a second transparent shield, where the first transparent shield is disposed between the pixel array and the second transparent shield. A light blocking layer is disposed between the first transparent shield and the second transparent shield, and the light blocking layer is disposed to prevent light from reflecting off edges of the first transparent shield into the pixel array.

公开(公告)号：US20170213863A1

公开(公告)日：2017-07-27

申请号：US15239537

申请日：2016-08-17

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Yin Qian ,  Ming Zhang ,  Chen-Wei Lu ,  Jin Li ,  Chia-Chun Miao ,  Dyson H. Tai

IPC: H01L27/146

CPC classification number: H01L27/14607 ,  H01L27/1461 ,  H01L27/1462 ,  H01L27/14623 ,  H01L27/14643 ,  H01L27/14685 ,  H01L27/14689

Abstract: An image sensor includes first and second pluralities of photodiodes interspersed among each other in a semiconductor substrate. Incident light is to be directed through a surface of the semiconductor substrate into the first and second pluralities of photodiodes. The first plurality of photodiodes has greater sensitivity to the incident light than the second plurality of photodiodes. A metal film layer is disposed over the surface of the semiconductor substrate over the second plurality of photodiodes and not over the first plurality of photodiodes. A metal grid is disposed over the surface of the semiconductor substrate, and includes a first plurality of openings through which the incident light is directed into the first plurality of photodiodes. The metal grid further includes a second plurality of openings through which the incident light is directed through the metal film layer into the second plurality of photodiodes.

公开(公告)号：US09608023B1

公开(公告)日：2017-03-28

申请号：US15144194

申请日：2016-05-02

Applicant: OMNIVISION TECHNOLOGIES, INC.

Inventor： Chia-Chun Miao ,  Yin Qian ,  Chao-Hung Lin ,  Chen-Wei Lu ,  Dyson H. Tai ,  Ming Zhang ,  Jin Li

IPC: H01L31/0203 ,  H01L27/146

CPC classification number: H01L27/14623 ,  H01L27/14618 ,  H01L27/14625 ,  H01L27/14685 ,  H01L27/14687

Abstract: An image sensor package includes an image sensor with a pixel array disposed in a semiconductor material, and a transparent shield adhered to the semiconductor material. The pixel array is disposed between the semiconductor material and the transparent shield. A light blocking layer is disposed in recessed regions of the transparent shield, and the recessed regions are disposed on an illuminated side of the transparent shield. The light blocking layer is disposed to prevent light from reflecting off edges of the transparent shield into the image sensor.

公开(公告)号：US11557625B2

公开(公告)日：2023-01-17

申请号：US16853684

申请日：2020-04-20

Applicant: OmniVision Technologies, Inc.

Inventor： Chia-Ying Liu ,  Wu-Zang Yang ,  Chia-Jung Liu ,  Ming Zhang ,  Yin Qian ,  Alireza Bonakdar

IPC: H01L27/146 ,  H01L31/0216 ,  H01L31/14 ,  H01L31/0352

Abstract: An image sensor with embedded wells for accommodating light emitters includes a semiconductor substrate including an array of doped sensing regions respectively corresponding to an array of photosensitive pixels of the image sensor. The semiconductor substrate forms an array of wells. Each well is aligned with a respective doped sensing region to facilitate detection, by the photosensitive pixel that includes said respective doped sensing region, of light emitted to the photosensitive pixel by a light emitter disposed in the well. The image sensor further includes, between adjacent doped sensing regions, a light-blocking barrier to reduce propagation of light to the doped sensing-region of each photosensitive pixel from wells not aligned therewith.