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公开(公告)号:US20090203163A1
公开(公告)日:2009-08-13
申请号:US12426310
申请日:2009-04-20
Applicant: Odd Harald Steen Eriksen , Kimiko J. Childress , Shuwen Guo
Inventor: Odd Harald Steen Eriksen , Kimiko J. Childress , Shuwen Guo
CPC classification number: G01L9/0042 , C23C14/021 , C23C14/022 , C23C14/025 , C23C14/0682 , C23C14/5806 , C23C14/5846 , C23C14/5873 , G01L9/0054 , G01L9/008 , G01L19/0061 , G01L19/0069 , G01L19/0076 , G01L19/0084 , G01L19/0609 , G01L19/141 , G01L19/147 , G01L19/148 , H01L2224/05553 , H01L2224/45169 , H01L2224/48472 , H01L2224/81805 , H01L2224/83805 , H01L2924/01322 , H01L2924/10253 , H01L2924/1461 , H01L2924/3025 , H01L2924/00
Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer. The method further includes depositing or growing a piezoelectric film or piezoresistive film on the wafer, depositing or growing an electrically conductive material on the piezoelectric or piezoresistive film to form at least one electrode, and depositing or growing a bonding layer including an electrical connection portion that is located on or is electrically coupled to the electrode. The method further includes the step of providing a ceramic substrate having a bonding layer located thereon, the bonding layer including an electrical connection portion and being patterned in a manner to generally match the bonding layer of the semiconductor-on-insulator wafer. The method also includes causing the bonding layer of the semiconductor-on-insulator wafer and the bonding layer of the substrate to bond together to thereby mechanically and electrically couple the semiconductor-on-insulator wafer and the substrate to form the transducer, wherein the electrical connection portions of the bonding layers of the semiconductor-on-insulator wafer and the substrate are fluidly isolated from the surrounding environment by the bonding layers.
Abstract translation: 一种用于形成换能器的方法,包括提供绝缘体上半导体晶片的步骤,该晶片包括由电绝缘层分隔的第一和第二半导体层。 该方法还包括在晶片上沉积或生长压电薄膜或压阻薄膜,在压电或压阻薄膜上沉积或生长导电材料以形成至少一个电极,以及沉积或生长包括电连接部分的粘合层, 位于电极上或与电极电耦合。 该方法还包括提供具有位于其上的结合层的陶瓷基板的步骤,所述接合层包括电连接部分并且以通常匹配绝缘体上半导体晶片的结合层的方式被图案化。 该方法还包括使绝缘体上半导体晶片的接合层和衬底的接合层接合在一起,从而机械地和电耦合绝缘体上半导体晶片和衬底以形成换能器,其中电气 绝缘体上半导体晶片和衬底的结合层的连接部分通过结合层与周围环境流体隔离。
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公开(公告)号:US20090108382A1
公开(公告)日:2009-04-30
申请号:US11523214
申请日:2006-09-19
Applicant: Odd Harald Steen Eriksen , Kimiko J. Childress , Shuwen Guo
Inventor: Odd Harald Steen Eriksen , Kimiko J. Childress , Shuwen Guo
CPC classification number: G01L9/0042 , C23C14/021 , C23C14/022 , C23C14/025 , C23C14/0682 , C23C14/5806 , C23C14/5846 , C23C14/5873 , G01L9/0054 , G01L9/008 , G01L19/0061 , G01L19/0069 , G01L19/0076 , G01L19/0084 , G01L19/0609 , G01L19/141 , G01L19/147 , G01L19/148 , H01L2224/05553 , H01L2224/45169 , H01L2224/48472 , H01L2224/81805 , H01L2224/83805 , H01L2924/01322 , H01L2924/10253 , H01L2924/1461 , H01L2924/3025 , H01L2924/00
Abstract: A pressure sensor for use in a harsh environment including a substrate and a sensor die directly coupled to the substrate by a bond frame positioned between the substrate and the sensor die. The sensor die includes a generally flexible diaphragm configured to flex when exposed to a sufficient differential pressure thereacross. The sensor further includes a piezoelectric or piezoresistive sensing element at least partially located on the diaphragm such that the sensing element provides an electrical signal upon flexure of the diaphragm. The sensor also includes an connecting component electrically coupled to the sensing element at a connection location that is fluidly isolated from the diaphragm by the bond frame. The bond frame is made of materials and the connecting component is electrically coupled to the sensing element by the same materials of the bond frame.
Abstract translation: 一种用于恶劣环境的压力传感器,包括通过位于基板和传感器管芯之间的接合框架直接耦合到基板的基板和传感器管芯。 传感器管芯包括大体上柔性的膜片,其被配置为当暴露于其上的足够的压差时弯曲。 传感器还包括至少部分地位于隔膜上的压电或压阻感测元件,使得感测元件在隔膜弯曲时提供电信号。 该传感器还包括一个连接部件,该连接部件在连接位置处电耦合到感测元件,该连接部分通过接合框架与隔膜流体隔离。 接合框架由材料制成,并且连接部件通过粘结框架的相同材料电耦合到感测元件。
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公开(公告)号:US06928878B1
公开(公告)日:2005-08-16
申请号:US10952310
申请日:2004-09-28
Applicant: Odd Harald Steen Eriksen , Shuwen Guo
Inventor: Odd Harald Steen Eriksen , Shuwen Guo
IPC: G01L9/00 , H01L41/113 , G01L9/16
CPC classification number: G01L9/008 , G01L9/0042 , G01L9/0055 , H01L41/1132 , Y10S439/936 , Y10T29/42 , Y10T29/49 , Y10T29/49005 , Y10T29/49007 , Y10T29/4908
Abstract: A pressure sensor including a movable component that is configured to move when the pressure sensor is exposed to differential pressure thereacross, and a pressure sensing component located on the movable component. The pressure sensing component includes an electrically conductive electron gas which changes its electrical resistance thereacross upon movement of the movable component. The pressure sensor is configured such that leads can be coupled to the pressure sensing component and the pressure sensing component can output a signal via the leads, the signal being related to a pressure to which the pressure sensor is exposed.
Abstract translation: 一种压力传感器,包括被构造成当压力传感器暴露于其间的差压时移动的可移动部件以及位于可移动部件上的压力感测部件。 压力感测部件包括导电电子气体,其在可移动部件移动时改变其电阻。 压力传感器被配置为使得引线可以耦合到压力感测部件,并且压力感测部件可以经由引线输出信号,该信号与压力传感器暴露于的压力相关。
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公开(公告)号:US20110256652A1
公开(公告)日:2011-10-20
申请号:US13083035
申请日:2011-04-08
Applicant: Shuwen Guo , Odd Harald Steen Eriksen , Kimiko J. Childress
Inventor: Shuwen Guo , Odd Harald Steen Eriksen , Kimiko J. Childress
IPC: H01L21/02
CPC classification number: G01L9/0042 , C23C14/021 , C23C14/022 , C23C14/025 , C23C14/0682 , C23C14/5806 , C23C14/5846 , C23C14/5873 , G01L9/0054 , G01L9/008 , G01L19/0061 , G01L19/0069 , G01L19/0076 , G01L19/0084 , G01L19/0609 , G01L19/141 , G01L19/147 , G01L19/148 , H01L2224/05553 , H01L2224/45169 , H01L2224/48472 , H01L2224/81805 , H01L2224/83805 , H01L2924/01322 , H01L2924/10253 , H01L2924/1461 , H01L2924/3025 , H01L2924/00
Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer, wherein the first layer is formed or provided by hydrogen ion delamination of a starting wafer. The method further includes doping the first layer to form a piezoresistive film and etching the piezoresistive film to form at least one piezoresistor. The method also includes depositing or growing a metallization layer on the semiconductor-on-insulator wafer, the metallization layer including an electrical connection portion that is located on or is electrically coupled to the piezoresistor. The method includes removing at least part of the second semiconductor layer to form a diaphragm, with the at least part of the piezoresistor being located on the diaphragm, and joining the wafer to a package by melting a high temperature braze material or a glass frit material.
Abstract translation: 一种用于形成换能器的方法,包括以下步骤:提供绝缘体上半导体晶片,其包括由电绝缘层分隔开的第一和第二半导体层,其中第一层由起始晶片的氢离子分层形成或提供。 该方法还包括掺杂第一层以形成压阻膜并蚀刻压电薄膜以形成至少一个压敏电阻。 该方法还包括在绝缘体上半导体晶片上沉积或生长金属化层,金属化层包括位于或电耦合到压敏电阻的电连接部分。 该方法包括移除至少部分第二半导体层以形成隔膜,至少部分压敏电阻位于隔膜上,并通过熔化高温钎焊材料或玻璃料材料将晶片接合到封装 。
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公开(公告)号:US07952154B2
公开(公告)日:2011-05-31
申请号:US12579123
申请日:2009-10-14
Applicant: Shuwen Guo , Odd Harald Steen Eriksen , David P. Potasek , Kimiko J. Childress
Inventor: Shuwen Guo , Odd Harald Steen Eriksen , David P. Potasek , Kimiko J. Childress
IPC: H01L29/84
CPC classification number: G01L9/0042 , C23C14/021 , C23C14/022 , C23C14/025 , C23C14/0682 , C23C14/5806 , C23C14/5846 , C23C14/5873 , G01L9/0054 , G01L9/008 , G01L19/0061 , G01L19/0069 , G01L19/0076 , G01L19/0084 , G01L19/0609 , G01L19/141 , G01L19/147 , G01L19/148 , H01L2224/05553 , H01L2224/45169 , H01L2224/48472 , H01L2224/81805 , H01L2224/83805 , H01L2924/01322 , H01L2924/10253 , H01L2924/1461 , H01L2924/3025 , H01L2924/00
Abstract: A harsh environment transducer including a substrate having a first surface and a second surface, wherein the second surface is in communication with the environment. The transducer includes a device layer sensor means located on the substrate for measuring a parameter associated with the environment. The sensor means including a single crystal semiconductor material having a thickness of less than about 0.5 microns. The transducer further includes an output contact located on the substrate and in electrical communication with the sensor means. The transducer includes a package having an internal package space and a port for communication with the environment. The package receives the substrate in the internal package space such that the first surface of the substrate is substantially isolated from the environment and the second surface of the substrate is substantially exposed to the environment through the port. The transducer further includes a connecting component coupled to the package and a wire electrically connecting the connecting component and the output contact such that an output of the sensor means can be communicated. An external surface of the wire is substantially platinum, and an external surface of at least one of the output contact and the connecting component is substantially platinum.
Abstract translation: 一种恶劣环境换能器,包括具有第一表面和第二表面的基底,其中第二表面与环境连通。 换能器包括位于基板上的用于测量与环境有关的参数的装置层传感器装置。 传感器装置包括厚度小于约0.5微米的单晶半导体材料。 换能器还包括位于基板上并与传感器装置电连通的输出触点。 换能器包括具有内部封装空间和用于与环境通信的端口的封装。 该封装在内部封装空间中接收衬底,使得衬底的第一表面基本上与环境隔离,并且衬底的第二表面基本上通过端口暴露于环境。 传感器还包括耦合到封装件的连接部件和将连接部件和输出触头电连接的导线,使得传感器装置的输出可以被传送。 导线的外表面基本上是铂,并且输出触点和连接部件中的至少一个的外表面基本上是铂。
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公开(公告)号:US20100047491A1
公开(公告)日:2010-02-25
申请号:US12607456
申请日:2009-10-28
Applicant: Odd Harald Steen Eriksen , Shuwen Guo , Kimiko J. Childress
Inventor: Odd Harald Steen Eriksen , Shuwen Guo , Kimiko J. Childress
CPC classification number: H01L24/83 , H01L21/7624 , H01L24/26 , H01L2224/83141 , H01L2224/83805 , H01L2224/83825 , H01L2224/8385 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01027 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/07802 , H01L2924/1461 , Y10T428/13 , Y10T428/31678 , H01L2924/00 , H01L2224/83205
Abstract: A structure including a first structural component, a second structural component and a bonding structure bonding the first and second structural components together, where the bonding structure contains a hypoeutectic solid solution alloy. The hypoeutectic solid solution alloy may be a gold-germanium solid solution alloy, a gold-silicon solid solution alloy or a gold-tin solid solution alloy.
Abstract translation: 一种结构,其包括第一结构部件,第二结构部件和将第一和第二结构部件接合在一起的接合结构,其中接合结构包含亚共晶固溶体合金。 亚共晶固溶体合金可以是金 - 锗固溶体合金,金 - 硅固溶体合金或金 - 锡固溶体合金。
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公开(公告)号:US07628309B1
公开(公告)日:2009-12-08
申请号:US11120879
申请日:2005-05-03
Applicant: Odd Harald Steen Eriksen , Shuwen Guo , Kimiko Childress
Inventor: Odd Harald Steen Eriksen , Shuwen Guo , Kimiko Childress
IPC: B23K20/00
CPC classification number: H01L24/83 , H01L21/7624 , H01L24/26 , H01L2224/83141 , H01L2224/83805 , H01L2224/83825 , H01L2224/8385 , H01L2924/00011 , H01L2924/01005 , H01L2924/01006 , H01L2924/01013 , H01L2924/01024 , H01L2924/01027 , H01L2924/01032 , H01L2924/01033 , H01L2924/0104 , H01L2924/01042 , H01L2924/0105 , H01L2924/01073 , H01L2924/01074 , H01L2924/01078 , H01L2924/01079 , H01L2924/01322 , H01L2924/01327 , H01L2924/014 , H01L2924/07802 , H01L2924/1461 , Y10T428/13 , Y10T428/31678 , H01L2924/00 , H01L2224/83205
Abstract: A method for bonding two components together including the steps of providing a first component, providing a second component, and locating a first eutectic bonding material between the first and second component. The first eutectic bonding material includes at least one of germanium, tin, or silicon. The method further includes the step of locating a second eutectic bonding material between the first and second component and adjacent to the first eutectic bonding material. The second eutectic bonding material includes gold. The method further includes the step of heating the first and second eutectic bonding materials to a temperature above a eutectic temperature of an alloy of the first and second eutectic bonding materials to allow a hypoeutectic alloy to form out of the first and second eutectic bonding materials. The method includes the further step of cooling the hypoeutectic alloy to form a solid solution alloy bonding the first and second components together.
Abstract translation: 一种用于将两个部件结合在一起的方法,包括提供第一部件,提供第二部件以及在第一和第二部件之间定位第一共晶接合材料的步骤。 第一共晶接合材料包括锗,锡或硅中的至少一种。 该方法还包括在第一和第二部件之间并且与第一共晶接合材料相邻定位第二共晶接合材料的步骤。 第二共晶接合材料包括金。 该方法还包括将第一和第二共晶接合材料加热到高于第一和第二共晶接合材料的合金的共晶温度的温度以允许亚共晶合金从第一和第二共晶接合材料形成的步骤。 该方法还包括冷却亚共晶合金以形成将第一和第二组分粘合在一起的固溶体合金的步骤。
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公开(公告)号:US08460961B2
公开(公告)日:2013-06-11
申请号:US13083035
申请日:2011-04-08
Applicant: Shuwen Guo , Odd Harald Steen Eriksen , Kimiko J. Childress
Inventor: Shuwen Guo , Odd Harald Steen Eriksen , Kimiko J. Childress
IPC: H01L21/36
CPC classification number: G01L9/0042 , C23C14/021 , C23C14/022 , C23C14/025 , C23C14/0682 , C23C14/5806 , C23C14/5846 , C23C14/5873 , G01L9/0054 , G01L9/008 , G01L19/0061 , G01L19/0069 , G01L19/0076 , G01L19/0084 , G01L19/0609 , G01L19/141 , G01L19/147 , G01L19/148 , H01L2224/05553 , H01L2224/45169 , H01L2224/48472 , H01L2224/81805 , H01L2224/83805 , H01L2924/01322 , H01L2924/10253 , H01L2924/1461 , H01L2924/3025 , H01L2924/00
Abstract: A method for forming a transducer including the step of providing a semiconductor-on-insulator wafer including first and second semiconductor layers separated by an electrically insulating layer, wherein the first layer is formed or provided by hydrogen ion delamination of a starting wafer. The method further includes doping the first layer to form a piezoresistive film and etching the piezoresistive film to form at least one piezoresistor. The method also includes depositing or growing a metallization layer on the semiconductor-on-insulator wafer, the metallization layer including an electrical connection portion that is located on or is electrically coupled to the piezoresistor. The method includes removing at least part of the second semiconductor layer to form a diaphragm, with the at least part of the piezoresistor being located on the diaphragm, and joining the wafer to a package by melting a high temperature braze material or a glass frit material.
Abstract translation: 一种用于形成换能器的方法,包括以下步骤:提供绝缘体上半导体晶片,其包括由电绝缘层分隔开的第一和第二半导体层,其中第一层由起始晶片的氢离子分层形成或提供。 该方法还包括掺杂第一层以形成压阻膜并蚀刻压电薄膜以形成至少一个压敏电阻。 该方法还包括在绝缘体上半导体晶片上沉积或生长金属化层,金属化层包括位于或电耦合到压敏电阻的电连接部分。 该方法包括移除至少部分第二半导体层以形成隔膜,至少部分压敏电阻位于隔膜上,并通过熔化高温钎焊材料或玻璃料材料将晶片接合到封装 。
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公开(公告)号:US08286508B2
公开(公告)日:2012-10-16
申请号:US12839216
申请日:2010-07-19
Applicant: Odd Harald Steen Eriksen , Shuwen Guo , Yosief Abraha
Inventor: Odd Harald Steen Eriksen , Shuwen Guo , Yosief Abraha
IPC: G01L3/02
CPC classification number: G01D5/20 , B64C25/28 , B64D2045/008
Abstract: A system for monitoring landing gear position. An example rotation position sensor includes a hub mount that locks within a shaft of a joint, a first sensor attached to the hub mount, and a second sensor attached to the rotatably attached part that does not rotate. The hub mount includes a nut that has a partially tapered surface and a threaded cavity. The nut is secured within the shaft. The hub mount also includes a mounting unit that has a partially tapered surface that is in opposition to the partially tapered surface of the nut. A fastener secures the hub mount to the nut. In one example, the first sensor includes a magnetometer and the second sensor includes magnet(s). In another example, the first sensor includes inductor sensor(s) and the second sensor includes device(s) that causes a change in an inductance value of the inductor sensor(s) as the joint rotates.
Abstract translation: 用于监控起落架位置的系统。 示例性旋转位置传感器包括锁定在接头的轴内的轮毂座,附接到轮毂座的第一传感器和附接到不旋转的可旋转地附接的部分的第二传感器。 毂安装件包括具有部分锥形表面和螺纹腔的螺母。 螺母固定在轴内。 毂安装件还包括安装单元,该安装单元具有与螺母的部分锥形表面相对的部分锥形表面。 紧固件将轮毂安装件固定到螺母上。 在一个示例中,第一传感器包括磁力计,第二传感器包括磁体。 在另一示例中,第一传感器包括电感传感器,并且第二传感器包括当接头旋转时引起电感器传感器的电感值变化的装置。
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公开(公告)号:US20120012700A1
公开(公告)日:2012-01-19
申请号:US12839216
申请日:2010-07-19
Applicant: Odd Harald Steen Eriksen , Shuwen Guo , Yosief Abraha
Inventor: Odd Harald Steen Eriksen , Shuwen Guo , Yosief Abraha
CPC classification number: G01D5/20 , B64C25/28 , B64D2045/008
Abstract: A system for monitoring landing gear position. An example rotation position sensor includes a hub mount that locks within a shaft of a joint, a first sensor attached to the hub mount, and a second sensor attached to the rotatably attached part that does not rotate. The hub mount includes a nut that has a partially tapered surface and a threaded cavity. The nut is secured within the shaft. The hub mount also includes a mounting unit that has a partially tapered surface that is in opposition to the partially tapered surface of the nut. A fastener secures the hub mount to the nut. In one example, the first sensor includes a magnetometer and the second sensor includes magnet(s). In another example, the first sensor includes inductor sensor(s) and the second sensor includes device(s) that causes a change in an inductance value of the inductor sensor(s) as the joint rotates.
Abstract translation: 用于监控起落架位置的系统。 示例性旋转位置传感器包括锁定在接头的轴内的轮毂座,附接到轮毂座的第一传感器和附接到不旋转的可旋转地附接的部分的第二传感器。 毂安装件包括具有部分锥形表面和螺纹腔的螺母。 螺母固定在轴内。 毂安装件还包括安装单元,该安装单元具有与螺母的部分锥形表面相对的部分锥形表面。 紧固件将轮毂安装件固定到螺母上。 在一个示例中,第一传感器包括磁力计,第二传感器包括磁体。 在另一示例中,第一传感器包括电感传感器,并且第二传感器包括当接头旋转时引起电感器传感器的电感值变化的装置。
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