PROCESS OF TRANSFERRING OF VCSEL EPI LAYER ONTO METAL HOST SUBSTRATE

    公开(公告)号:US20230056416A1

    公开(公告)日:2023-02-23

    申请号:US17408762

    申请日:2021-08-23

    Abstract: A method of transferring a semiconductor epi layer onto a metal host substrate is described. An epi layer of a semiconductor chip (e.g., semiconductor laser array) including a substrate can be mounted onto a planar handle wafer with an adhesive, wherein a backside of the substrate faces upward and away from the epi layer and the planar handle wafer. The backside of the substrate can be treated to substantially remove the substrate, while leaving the epi layer undamaged (e.g., by polishing to where no more than 20 micrometers of the substrate remains). Metal can be formed on the treated backside resulting in a metalized backside. The planar handle wafer can then be removed from the epi layer by dissolving the adhesive with a solvent, wherein a modified semiconductor chip remains. The semiconductor chip can be annealed to form a backside ohmic contact interface. The semiconductor chip can then be attached to a mechanical block by the ohmic contact interface.

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