Thin-film transistor, display panel, and method for producing a thin-film transistor
    11.
    发明授权
    Thin-film transistor, display panel, and method for producing a thin-film transistor 有权
    薄膜晶体管,显示面板以及薄膜晶体管的制造方法

    公开(公告)号:US08921867B2

    公开(公告)日:2014-12-30

    申请号:US14130940

    申请日:2013-06-05

    摘要: A thin-film transistor including: a gate electrode that is located above a substrate; a gate insulating layer that faces the gate electrode; a partition that defines an opening and has higher liquid repellency than liquid repellency of the gate insulating layer, the opening having a surface of the gate insulating layer therewithin; a semiconductor layer that faces the gate electrode with the gate insulating layer interposed therebetween and is formed within the opening by an application method; a source electrode and a drain electrode that are electrically connected to the semiconductor layer; and an intermediate layer that is made of the same material as a material of the partition and is located between the gate insulating layer and the semiconductor layer, wherein the intermediate layer is discretely present above the gate insulating layer.

    摘要翻译: 1.一种薄膜晶体管,包括:位于基板上方的栅电极; 面对栅电极的栅极绝缘层; 限定开口并具有比栅极绝缘层的液体排斥性更高的液体排斥性的隔板,该开口具有栅极绝缘层的表面; 面向栅电极的半导体层,其间具有栅极绝缘层,并通过施加方法形成在开口内; 源电极和漏电极,其电连接到所述半导体层; 以及由与所述隔板的材料相同的材料制成并且位于所述栅极绝缘层和所述半导体层之间的中间层,其中所述中间层离散地存在于所述栅极绝缘层的上方。