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    Radiation detector of the ΔE-E type with insulation trenches
    11.
    发明授权
    Radiation detector of the ΔE-E type with insulation trenches 有权
    具有绝缘沟槽的＆Dgr。E-E型辐射探测器

    公开(公告)号：US08183655B2

    公开(公告)日：2012-05-22

    申请号：US12704341

    申请日：2010-02-11

    Applicant: Giuseppe Valvo ,  Piero Giorgio Fallica ,  Stefano Agosteo ,  Alberto Fazzi

    Inventor： Giuseppe Valvo ,  Piero Giorgio Fallica ,  Stefano Agosteo ,  Alberto Fazzi

    IPC: H01L31/0352

    CPC classification number: H01L31/103 ,  H01L27/1463 ,  H01L31/115

    Abstract: A radiation detector of the ΔE-E type is proposed. The detector is integrated in a chip of semiconductor material with a front surface and a back surface opposite the front surface, the detector having at least one detection cell arranged on the front surface for receiving a radiation to be evaluated, wherein the detector includes: a first region of a first type of conductivity extending into the chip from the front surface to a first depth; a second region of a second type of conductivity extending into the chip from the back surface to a second depth so as to reach the first region; and for each detection cell a third region of the second type of conductivity extending into the first region from the front surface to a third depth lower than the first depth and the second depth, a thin sensitive volume for absorbing energy from the radiation being defined by a junction between the first region and each third region, and a thick sensitive volume for absorbing further energy from the radiation being defined by a further junction between the first region and the second region. For each detection cell the detector further includes insulation means arranged around the third region and extending from the front surface into the first region to an insulation depth comprised between the first depth and the third depth.

    Abstract translation: 提出了一种E-E型辐射探测器。 检测器集成在具有与前表面相对的前表面和后表面的半导体材料芯片中，检测器具有布置在前表面上的至少一个检测单元，用于接收待评估的辐射，其中检测器包括： 从前表面延伸到第一深度的第一类导电性的第一区域; 从第二深度延伸到芯片中的第二类导电体的第二区域，以便到达第一区域; 并且对于每个检测单元，第二类型的电导率的第三区域从前表面延伸到比第一深度和第二深度低的第三深度的第一区域，用于吸收来自辐射的能量的薄敏感体积由 第一区域和每个第三区域之间的接合点，以及用于吸收来自辐射的进一步能量的厚度敏感体积，由第一区域和第二区域之间的另一接合限定。 对于每个检测单元，检测器还包括设置在第三区域周围并且从前表面延伸到第一区域到包括在第一深度和第三深度之间的绝缘深度的绝缘装置。

    Process for manufacturing a semiconductor material wafer comprising single-Crystal regions separated by insulating material regions
    13.
    发明授权
    Process for manufacturing a semiconductor material wafer comprising single-Crystal regions separated by insulating material regions 有权
    包括由绝缘材料区域隔开的单晶区域的半导体材料晶片的制造方法

    公开(公告)号：US06551944B1

    公开(公告)日：2003-04-22

    申请号：US09544717

    申请日：2000-04-06

    Applicant: Piero Giorgio Fallica ,  Davide Giuseppe Patti ,  Cirino Rapisarda

    Inventor： Piero Giorgio Fallica ,  Davide Giuseppe Patti ,  Cirino Rapisarda

    IPC: H01L2100

    CPC classification number: H01L21/76232 ,  H01L21/763

    Abstract: A process including the steps of: carrying out a directional etching in a semiconductor material body to form trenches having a first width; carrying out an isotropic etching of the semiconductor material body under the trenches to form cavities having a width larger than the trenches; covering the walls of the cavities with dielectric material; depositing non-conducting material different from thermal oxide to fill the cavities at least partially, so as to form a single-crystal island separated from the rest of the semiconductor material body. The isotropic etching permits the formation of at least two adjacent cavities separated by a support region of semiconductor material, which is oxidized together with the walls of the cavities to provide a support to the island prior to filling with non-conducting material.

    Abstract translation: 一种方法，包括以下步骤：在半导体材料体中进行定向蚀刻以形成具有第一宽度的沟槽; 在沟槽下进行半导体材料体的各向同性蚀刻，以形成宽度大于沟槽的空腔; 用介电材料覆盖空腔的壁; 沉积与热氧化物不同的非导电材料以至少部分地填充空腔，以形成与半导体材料体的其余部分分离的单晶岛。 各向同性蚀刻允许形成由半导体材料的支撑区域隔开的至少两个相邻的空腔，其与腔的壁一起被氧化，以在填充非导电材料之前提供对岛的支撑。

    Array of mutually isolated, geiger-mode, avalanche photodiodes and manufacturing method thereof
    15.
    发明授权
    Array of mutually isolated, geiger-mode, avalanche photodiodes and manufacturing method thereof 有权
    相互隔离，盖格模式，雪崩光电二极管的阵列及其制造方法

    公开(公告)号：US08778721B2

    公开(公告)日：2014-07-15

    申请号：US12356445

    申请日：2009-01-20

    Applicant: Delfo Nunziato Sanfilippo ,  Piero Giorgio Fallica

    Inventor： Delfo Nunziato Sanfilippo ,  Piero Giorgio Fallica

    IPC: H01L31/0232

    CPC classification number: H01L31/107 ,  H01L25/167 ,  H01L27/14629 ,  H01L27/14643 ,  H01L2924/0002 ,  H01L2924/00

    Abstract: An embodiment of array of Geiger-mode avalanche photodiodes, wherein each photodiode is formed by a body of semiconductor material, having a first conductivity type and housing an anode region, of a second conductivity type, facing a top surface of the body, a cathode-contact region, having the first conductivity type and a higher doping level than the body, facing a bottom surface of the body, an insulation region extending through the body and insulating an active area from the rest of the body, the active area housing the anode region and the cathode-contact region. The insulation region is formed by a first mirror region of polycrystalline silicon, a second mirror region of metal material, and a channel-stopper region of dielectric material, surrounding the first and second mirror regions.

    Abstract translation: Geiger型雪崩光电二极管阵列的一个实施例，其中每个光电二极管由半导体材料体形成，具有第一导电类型并且容纳阳极区，第二导电类型面向主体的顶表面，阴极 接触区域，其具有第一导电类型和比主体更高的掺杂水平，面向主体的底表面;绝缘区域，其延伸穿过主体并将活动区域与身体的其余部分隔离;活动区域容纳 阳极区域和阴极接触区域。 绝缘区域由多晶硅的第一反射镜区域，金属材料的第二反射镜区域和电介质材料的通道停止区域形成，围绕第一和第二反射镜区域。

    Radiation detector of the deltaE-E type with insulation trenches
    17.
    发明授权
    Radiation detector of the deltaE-E type with insulation trenches 有权
    具有绝缘沟槽的deltaE-E型辐射检测器

    公开(公告)号：US07847360B2

    公开(公告)日：2010-12-07

    申请号：US11810701

    申请日：2007-06-05

    Applicant: Giuseppina Valvo ,  Piero Giorgio Fallica ,  Stefano Agosteo ,  Alberto Fazzi

    Inventor： Giuseppina Valvo ,  Piero Giorgio Fallica ,  Stefano Agosteo ,  Alberto Fazzi

    IPC: H01L31/0352

    CPC classification number: H01L31/103 ,  H01L27/1463 ,  H01L31/115

    Abstract: A radiation detector of the ΔE-E type is proposed. The detector is integrated in a chip of semiconductor material with a front surface and a back surface opposite the front surface, the detector having at least one detection cell arranged on the front surface for receiving a radiation to be evaluated, wherein the detector includes: a first region of a first type of conductivity extending into the chip from the front surface to a first depth; a second region of a second type of conductivity extending into the chip from the back surface to a second depth so as to reach the first region; and for each detection cell a third region of the second type of conductivity extending into the first region from the front surface to a third depth lower than the first depth and the second depth, a thin sensitive volume for absorbing energy from the radiation being defined by a junction between the first region and each third region, and a thick sensitive volume for absorbing further energy from the radiation being defined by a further junction between the first region and the second region. For each detection cell the detector further includes insulation means arranged around the third region and extending from the front surface into the first region to an insulation depth comprised between the first depth and the third depth.

    Abstract translation: 提出了一种E-E型辐射探测器。 检测器集成在具有与前表面相对的前表面和后表面的半导体材料芯片中，检测器具有布置在前表面上的至少一个检测单元，用于接收待评估的辐射，其中检测器包括： 从前表面延伸到第一深度的第一类导电性的第一区域; 从第二深度延伸到芯片中的第二类导电体的第二区域，以便到达第一区域; 并且对于每个检测单元，第二类型的电导率的第三区域从前表面延伸到比第一深度和第二深度低的第三深度的第一区域，用于吸收来自辐射的能量的薄敏感体积由 第一区域和每个第三区域之间的接合点，以及用于吸收来自辐射的进一步能量的厚度敏感体积，由第一区域和第二区域之间的另一接合限定。 对于每个检测单元，检测器还包括设置在第三区域周围并且从前表面延伸到第一区域到包括在第一深度和第三深度之间的绝缘深度的绝缘装置。

    Radiation detector of the deltaE-E type with insulation trenches
    18.
    发明申请
    Radiation detector of the deltaE-E type with insulation trenches 有权
    具有绝缘沟槽的deltaE-E型辐射检测器

    公开(公告)号：US20080121807A1

    公开(公告)日：2008-05-29

    申请号：US11810701

    申请日：2007-06-05

    Applicant: Giuseppina Valvo ,  Piero Giorgio Fallica ,  Stefano Agosteo ,  Alberto Fazzi

    Inventor： Giuseppina Valvo ,  Piero Giorgio Fallica ,  Stefano Agosteo ,  Alberto Fazzi

    IPC: G01T1/02

    CPC classification number: H01L31/103 ,  H01L27/1463 ,  H01L31/115

    Abstract: A radiation detector of the ΔE-E type is proposed. The detector is integrated in a chip of semiconductor material with a front surface and a back surface opposite the front surface, the detector having at least one detection cell arranged on the front surface for receiving a radiation to be evaluated, wherein the detector includes: a first region of a first type of conductivity extending into the chip from the front surface to a first depth; a second region of a second type of conductivity extending into the chip from the back surface to a second depth so as to reach the first region; and for each detection cell a third region of the second type of conductivity extending into the first region from the front surface to a third depth lower than the first depth and the second depth, a thin sensitive volume for absorbing energy from the radiation being defined by a junction between the first region and each third region, and a thick sensitive volume for absorbing further energy from the radiation being defined by a further junction between the first region and the second region. For each detection cell the detector further includes insulation means arranged around the third region and extending from the front surface into the first region to an insulation depth comprised between the first depth and the third depth.

    Abstract translation: 提出了DeltaE-E型辐射探测器。 检测器集成在具有与前表面相对的前表面和后表面的半导体材料芯片中，检测器具有布置在前表面上的至少一个检测单元，用于接收待评估的辐射，其中检测器包括： 从前表面延伸到第一深度的第一类导电性的第一区域; 从第二深度延伸到芯片中的第二类导电体的第二区域，以便到达第一区域; 并且对于每个检测单元，第二类型的电导率的第三区域从前表面延伸到比第一深度和第二深度低的第三深度的第一区域，用于吸收来自辐射的能量的薄敏感体积由 第一区域和每个第三区域之间的接合点，以及用于吸收来自辐射的进一步能量的厚度敏感体积，由第一区域和第二区域之间的另一接合限定。 对于每个检测单元，检测器还包括设置在第三区域周围并且从前表面延伸到第一区域到包括在第一深度和第三深度之间的绝缘深度的绝缘装置。

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